JP2006024703A5 - - Google Patents
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- Publication number
- JP2006024703A5 JP2006024703A5 JP2004200887A JP2004200887A JP2006024703A5 JP 2006024703 A5 JP2006024703 A5 JP 2006024703A5 JP 2004200887 A JP2004200887 A JP 2004200887A JP 2004200887 A JP2004200887 A JP 2004200887A JP 2006024703 A5 JP2006024703 A5 JP 2006024703A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- semiconductor layer
- buried film
- semiconductor laser
- laser element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000004767 nitrides Chemical class 0.000 claims 34
- 239000004065 semiconductor Substances 0.000 claims 34
- 239000010410 layer Substances 0.000 claims 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 6
- 239000001301 oxygen Substances 0.000 claims 6
- 239000000470 constituent Substances 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004200887A JP2006024703A (ja) | 2004-07-07 | 2004-07-07 | 窒化物半導体レーザ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004200887A JP2006024703A (ja) | 2004-07-07 | 2004-07-07 | 窒化物半導体レーザ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006024703A JP2006024703A (ja) | 2006-01-26 |
| JP2006024703A5 true JP2006024703A5 (enExample) | 2007-08-16 |
Family
ID=35797770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004200887A Pending JP2006024703A (ja) | 2004-07-07 | 2004-07-07 | 窒化物半導体レーザ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006024703A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4601391B2 (ja) * | 2004-10-28 | 2010-12-22 | シャープ株式会社 | 窒化物半導体素子およびその製造方法 |
| US7773650B2 (en) | 2006-12-28 | 2010-08-10 | Nichia Corporation | Nitride semiconductor laser element |
| US7646798B2 (en) | 2006-12-28 | 2010-01-12 | Nichia Corporation | Nitride semiconductor laser element |
| US7764722B2 (en) | 2007-02-26 | 2010-07-27 | Nichia Corporation | Nitride semiconductor laser element |
| US7804872B2 (en) | 2007-06-07 | 2010-09-28 | Nichia Corporation | Nitride semiconductor laser element |
| US7701995B2 (en) | 2007-07-06 | 2010-04-20 | Nichia Corporation | Nitride semiconductor laser element |
| JP5223552B2 (ja) | 2008-05-02 | 2013-06-26 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子の製造方法 |
| KR101628233B1 (ko) * | 2010-07-08 | 2016-06-08 | 엘지이노텍 주식회사 | 발광 다이오드 및 이를 포함하는 발광 소자 패키지 |
| JP5510212B2 (ja) | 2010-09-08 | 2014-06-04 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子及びその製造方法 |
-
2004
- 2004-07-07 JP JP2004200887A patent/JP2006024703A/ja active Pending
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