JP2006024703A - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

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Publication number
JP2006024703A
JP2006024703A JP2004200887A JP2004200887A JP2006024703A JP 2006024703 A JP2006024703 A JP 2006024703A JP 2004200887 A JP2004200887 A JP 2004200887A JP 2004200887 A JP2004200887 A JP 2004200887A JP 2006024703 A JP2006024703 A JP 2006024703A
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Japan
Prior art keywords
layer
film
nitride semiconductor
semiconductor layer
electrode
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Pending
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JP2004200887A
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Japanese (ja)
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JP2006024703A5 (enExample
Inventor
Shinko Noguchi
真弘 野口
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Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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Priority to JP2004200887A priority Critical patent/JP2006024703A/ja
Publication of JP2006024703A publication Critical patent/JP2006024703A/ja
Publication of JP2006024703A5 publication Critical patent/JP2006024703A5/ja
Pending legal-status Critical Current

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JP2004200887A 2004-07-07 2004-07-07 窒化物半導体レーザ素子 Pending JP2006024703A (ja)

Priority Applications (1)

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JP2004200887A JP2006024703A (ja) 2004-07-07 2004-07-07 窒化物半導体レーザ素子

Applications Claiming Priority (1)

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JP2004200887A JP2006024703A (ja) 2004-07-07 2004-07-07 窒化物半導体レーザ素子

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JP2006024703A true JP2006024703A (ja) 2006-01-26
JP2006024703A5 JP2006024703A5 (enExample) 2007-08-16

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JP2004200887A Pending JP2006024703A (ja) 2004-07-07 2004-07-07 窒化物半導体レーザ素子

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128389A (ja) * 2004-10-28 2006-05-18 Sharp Corp 窒化物半導体素子およびその製造方法
EP1962395A2 (en) 2007-02-26 2008-08-27 Nichia Corporation Nitride semiconductor laser element
US7646798B2 (en) 2006-12-28 2010-01-12 Nichia Corporation Nitride semiconductor laser element
US7701995B2 (en) 2007-07-06 2010-04-20 Nichia Corporation Nitride semiconductor laser element
US7773650B2 (en) 2006-12-28 2010-08-10 Nichia Corporation Nitride semiconductor laser element
US7804872B2 (en) 2007-06-07 2010-09-28 Nichia Corporation Nitride semiconductor laser element
US8053262B2 (en) 2008-05-02 2011-11-08 Nichia Corporation Method for manufacturing nitride semiconductor laser element
KR20120005296A (ko) * 2010-07-08 2012-01-16 엘지이노텍 주식회사 발광 다이오드 및 이를 포함하는 발광 소자 패키지
US8415188B2 (en) 2010-09-08 2013-04-09 Nichia Corporation Method for manufacturing nitride semiconductor laser element

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8203152B2 (en) 2004-10-28 2012-06-19 Sharp Kabushiki Kaisha Nitride semiconductor devices including a separation preventing layer
JP2006128389A (ja) * 2004-10-28 2006-05-18 Sharp Corp 窒化物半導体素子およびその製造方法
US7646798B2 (en) 2006-12-28 2010-01-12 Nichia Corporation Nitride semiconductor laser element
US8900901B2 (en) 2006-12-28 2014-12-02 Nichia Corporation Nitride semiconductor laser element
US7773650B2 (en) 2006-12-28 2010-08-10 Nichia Corporation Nitride semiconductor laser element
EP1962395A2 (en) 2007-02-26 2008-08-27 Nichia Corporation Nitride semiconductor laser element
EP2086076A2 (en) 2007-02-26 2009-08-05 Nichia Corporation Nitride semiconductor laser element
US7804872B2 (en) 2007-06-07 2010-09-28 Nichia Corporation Nitride semiconductor laser element
US8102891B2 (en) 2007-07-06 2012-01-24 Nichia Corporation Nitride semiconductor laser element
US7701995B2 (en) 2007-07-06 2010-04-20 Nichia Corporation Nitride semiconductor laser element
US8053262B2 (en) 2008-05-02 2011-11-08 Nichia Corporation Method for manufacturing nitride semiconductor laser element
KR20120005296A (ko) * 2010-07-08 2012-01-16 엘지이노텍 주식회사 발광 다이오드 및 이를 포함하는 발광 소자 패키지
KR101628233B1 (ko) * 2010-07-08 2016-06-08 엘지이노텍 주식회사 발광 다이오드 및 이를 포함하는 발광 소자 패키지
US8415188B2 (en) 2010-09-08 2013-04-09 Nichia Corporation Method for manufacturing nitride semiconductor laser element

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