ATE546869T1 - Oberflächenemissionslaser - Google Patents
OberflächenemissionslaserInfo
- Publication number
- ATE546869T1 ATE546869T1 AT08011937T AT08011937T ATE546869T1 AT E546869 T1 ATE546869 T1 AT E546869T1 AT 08011937 T AT08011937 T AT 08011937T AT 08011937 T AT08011937 T AT 08011937T AT E546869 T1 ATE546869 T1 AT E546869T1
- Authority
- AT
- Austria
- Prior art keywords
- reflection mirror
- semiconductor layer
- refractive index
- substrate
- low refractive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0655—Single transverse or lateral mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
- H01S5/18372—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials by native oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
- H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007198485A JP4350774B2 (ja) | 2007-07-31 | 2007-07-31 | 面発光レーザ |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE546869T1 true ATE546869T1 (de) | 2012-03-15 |
Family
ID=39970717
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08011937T ATE546869T1 (de) | 2007-07-31 | 2008-07-02 | Oberflächenemissionslaser |
Country Status (5)
Country | Link |
---|---|
US (2) | US7697586B2 (de) |
EP (1) | EP2020712B1 (de) |
JP (1) | JP4350774B2 (de) |
CN (1) | CN101359807B (de) |
AT (1) | ATE546869T1 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4906704B2 (ja) * | 2007-02-08 | 2012-03-28 | キヤノン株式会社 | 面発光レーザ、及び面発光レーザを備えた発光装置 |
JP4350774B2 (ja) * | 2007-07-31 | 2009-10-21 | キヤノン株式会社 | 面発光レーザ |
JP4347369B2 (ja) * | 2007-07-31 | 2009-10-21 | キヤノン株式会社 | 面発光レーザの製造方法 |
JP4709259B2 (ja) * | 2007-10-12 | 2011-06-22 | キヤノン株式会社 | 面発光レーザ |
JP5084540B2 (ja) * | 2008-02-06 | 2012-11-28 | キヤノン株式会社 | 垂直共振器型面発光レーザ |
JP5171318B2 (ja) * | 2008-03-05 | 2013-03-27 | キヤノン株式会社 | 面発光レーザアレイ |
JP5388666B2 (ja) * | 2008-04-21 | 2014-01-15 | キヤノン株式会社 | 面発光レーザ |
JP5106487B2 (ja) * | 2008-07-31 | 2012-12-26 | キヤノン株式会社 | 面発光レーザの製造方法及び面発光レーザアレイの製造方法、該製造方法による面発光レーザアレイを備えている光学機器 |
JP4639249B2 (ja) | 2008-07-31 | 2011-02-23 | キヤノン株式会社 | 面発光レーザの製造方法及び面発光レーザアレイの製造方法、面発光レーザ及び面発光レーザアレイ、面発光レーザアレイを備えている光学機器 |
JP5038371B2 (ja) * | 2008-09-26 | 2012-10-03 | キヤノン株式会社 | 面発光レーザの製造方法 |
DE102009001505A1 (de) * | 2008-11-21 | 2010-05-27 | Vertilas Gmbh | Oberflächenemittierende Halbleiterlaserdiode und Verfahren zur Herstellung derselben |
JP5505827B2 (ja) * | 2009-02-23 | 2014-05-28 | 独立行政法人情報通信研究機構 | 光導波路型半導体 |
US7952772B2 (en) | 2009-05-08 | 2011-05-31 | Honeywell International Inc. | Photonic crystal fiber sensor |
EP2544320A4 (de) * | 2010-03-01 | 2017-11-29 | Japan Science and Technology Agency | Photonischer kristall-laser |
US9130348B2 (en) | 2010-07-30 | 2015-09-08 | Kyoto University | Two-dimensional photonic crystal laser |
JP5854417B2 (ja) * | 2010-07-30 | 2016-02-09 | 国立大学法人京都大学 | 2次元フォトニック結晶レーザ |
JP5950523B2 (ja) * | 2010-10-16 | 2016-07-13 | キヤノン株式会社 | 面発光レーザ、面発光レーザアレイ、画像形成装置 |
US9042421B2 (en) | 2010-10-18 | 2015-05-26 | Canon Kabushiki Kaisha | Surface emitting laser, surface emitting laser array, and optical apparatus having surface emitting laser array |
JP6331997B2 (ja) * | 2014-11-28 | 2018-05-30 | 三菱電機株式会社 | 半導体光素子 |
CN106025797B (zh) * | 2016-07-18 | 2019-05-17 | 中国科学院半导体研究所 | 二维光子准晶宽区半导体激光器结构 |
EP4131677A4 (de) * | 2020-03-31 | 2023-11-01 | Kyoto University | Zweidimensionaler laser mit photonischem kristall |
CN112397998B (zh) * | 2020-11-13 | 2022-04-01 | 中国科学院半导体研究所 | 一种面发射激光器及其制备方法 |
DE102021127523A1 (de) | 2021-10-22 | 2023-04-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Oberflächenemittierender photonischer-kristall-laser und verfahren zur herstellung eines solchen |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6304588B1 (en) * | 1997-02-07 | 2001-10-16 | Xerox Corporation | Method and structure for eliminating polarization instability in laterally-oxidized VCSELs |
JP3440306B2 (ja) | 1997-12-25 | 2003-08-25 | 日本電信電話株式会社 | 3次元半導体光結晶素子の製造方法 |
WO2002073753A2 (en) * | 2001-03-09 | 2002-09-19 | Alight Technologies A/S | Mode control using transversal bandgap structure in vcsels |
JP3828472B2 (ja) | 2002-09-19 | 2006-10-04 | 泰彦 荒川 | 光機能素子 |
US6778581B1 (en) * | 2002-09-24 | 2004-08-17 | Finisar Corporation | Tunable vertical cavity surface emitting laser |
JP4602701B2 (ja) | 2004-06-08 | 2010-12-22 | 株式会社リコー | 面発光レーザ及び光伝送システム |
FR2881876B1 (fr) * | 2005-02-07 | 2007-05-25 | Centre Nat Rech Scient | Procede d'oxydation planaire pour realiser un isolant enterre localise |
US7483466B2 (en) * | 2005-04-28 | 2009-01-27 | Canon Kabushiki Kaisha | Vertical cavity surface emitting laser device |
JP4027392B2 (ja) * | 2005-04-28 | 2007-12-26 | キヤノン株式会社 | 垂直共振器型面発光レーザ装置 |
JP4933193B2 (ja) | 2005-08-11 | 2012-05-16 | キヤノン株式会社 | 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法 |
US7697588B2 (en) * | 2006-11-02 | 2010-04-13 | Canon Kabushiki Kaisha | Structure having photonic crystal and surface-emitting laser using the same |
US7499481B2 (en) * | 2006-11-14 | 2009-03-03 | Canon Kabushiki Kaisha | Surface-emitting laser and method for producing the same |
US7535946B2 (en) * | 2006-11-16 | 2009-05-19 | Canon Kabushiki Kaisha | Structure using photonic crystal and surface emitting laser |
JP4347369B2 (ja) | 2007-07-31 | 2009-10-21 | キヤノン株式会社 | 面発光レーザの製造方法 |
JP4350774B2 (ja) * | 2007-07-31 | 2009-10-21 | キヤノン株式会社 | 面発光レーザ |
-
2007
- 2007-07-31 JP JP2007198485A patent/JP4350774B2/ja not_active Expired - Fee Related
-
2008
- 2008-07-01 US US12/166,225 patent/US7697586B2/en not_active Expired - Fee Related
- 2008-07-02 AT AT08011937T patent/ATE546869T1/de active
- 2008-07-02 EP EP08011937A patent/EP2020712B1/de not_active Not-in-force
- 2008-07-31 CN CN2008101294596A patent/CN101359807B/zh not_active Expired - Fee Related
-
2009
- 2009-10-21 US US12/582,796 patent/US7965755B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101359807B (zh) | 2010-07-21 |
JP2009038062A (ja) | 2009-02-19 |
JP4350774B2 (ja) | 2009-10-21 |
US20090034572A1 (en) | 2009-02-05 |
US7965755B2 (en) | 2011-06-21 |
EP2020712A1 (de) | 2009-02-04 |
US20100046570A1 (en) | 2010-02-25 |
EP2020712B1 (de) | 2012-02-22 |
CN101359807A (zh) | 2009-02-04 |
US7697586B2 (en) | 2010-04-13 |
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