ATE545182T1 - Verfahren zur herstellung eines oberflächenemissionslasers - Google Patents

Verfahren zur herstellung eines oberflächenemissionslasers

Info

Publication number
ATE545182T1
ATE545182T1 AT08011936T AT08011936T ATE545182T1 AT E545182 T1 ATE545182 T1 AT E545182T1 AT 08011936 T AT08011936 T AT 08011936T AT 08011936 T AT08011936 T AT 08011936T AT E545182 T1 ATE545182 T1 AT E545182T1
Authority
AT
Austria
Prior art keywords
semiconductor layer
forming
crystal structure
photonic crystal
semiconductor
Prior art date
Application number
AT08011936T
Other languages
English (en)
Inventor
Mitsuhiro Ikuta
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE545182T1 publication Critical patent/ATE545182T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H01S5/18372—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials by native oxidation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/1213—Constructional arrangements comprising photonic band-gap structures or photonic lattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
AT08011936T 2007-07-31 2008-07-02 Verfahren zur herstellung eines oberflächenemissionslasers ATE545182T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007198489A JP4347369B2 (ja) 2007-07-31 2007-07-31 面発光レーザの製造方法

Publications (1)

Publication Number Publication Date
ATE545182T1 true ATE545182T1 (de) 2012-02-15

Family

ID=40011126

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08011936T ATE545182T1 (de) 2007-07-31 2008-07-02 Verfahren zur herstellung eines oberflächenemissionslasers

Country Status (5)

Country Link
US (1) US7879632B2 (de)
EP (1) EP2020711B1 (de)
JP (1) JP4347369B2 (de)
CN (1) CN101359808B (de)
AT (1) ATE545182T1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4906704B2 (ja) * 2007-02-08 2012-03-28 キヤノン株式会社 面発光レーザ、及び面発光レーザを備えた発光装置
JP4350774B2 (ja) * 2007-07-31 2009-10-21 キヤノン株式会社 面発光レーザ
JP4709259B2 (ja) * 2007-10-12 2011-06-22 キヤノン株式会社 面発光レーザ
JP5171318B2 (ja) * 2008-03-05 2013-03-27 キヤノン株式会社 面発光レーザアレイ
JP5388666B2 (ja) * 2008-04-21 2014-01-15 キヤノン株式会社 面発光レーザ
TWI387133B (zh) * 2008-05-02 2013-02-21 Epistar Corp 發光元件
JP4639249B2 (ja) 2008-07-31 2011-02-23 キヤノン株式会社 面発光レーザの製造方法及び面発光レーザアレイの製造方法、面発光レーザ及び面発光レーザアレイ、面発光レーザアレイを備えている光学機器
JP5106487B2 (ja) * 2008-07-31 2012-12-26 キヤノン株式会社 面発光レーザの製造方法及び面発光レーザアレイの製造方法、該製造方法による面発光レーザアレイを備えている光学機器
JP5038371B2 (ja) * 2008-09-26 2012-10-03 キヤノン株式会社 面発光レーザの製造方法
KR100999713B1 (ko) 2009-03-17 2010-12-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
US9130348B2 (en) 2010-07-30 2015-09-08 Kyoto University Two-dimensional photonic crystal laser
JP5854417B2 (ja) * 2010-07-30 2016-02-09 国立大学法人京都大学 ２次元フォトニック結晶レーザ
JP5874947B2 (ja) * 2010-07-30 2016-03-02 国立大学法人京都大学 ２次元フォトニック結晶レーザの製造方法
JP5858659B2 (ja) * 2011-06-21 2016-02-10 キヤノン株式会社 フォトニック結晶面発光レーザおよびその製造方法
US9660043B2 (en) 2012-06-04 2017-05-23 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
US9793439B2 (en) 2012-07-12 2017-10-17 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9312448B2 (en) * 2012-07-12 2016-04-12 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
KR20140078977A (ko) * 2012-12-18 2014-06-26 서울바이오시스 주식회사 고효율 발광 다이오드
US9531160B2 (en) * 2013-03-08 2016-12-27 Japan Science And Technology Agency Two-dimensional photonic crystal surface-emitting laser
JP7279875B2 (ja) * 2018-09-03 2023-05-23 国立大学法人京都大学 面発光レーザ素子及び面発光レーザ素子の製造方法
DE102021127523A1 (de) 2021-10-22 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenemittierender photonischer-kristall-laser und verfahren zur herstellung eines solchen
TWI844803B (zh) * 2021-10-28 2024-06-11 鴻海精密工業股份有限公司 光子晶體面射型雷射裝置及光學系統
DE102021133904A1 (de) * 2021-12-20 2023-06-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser und verfahren zur herstellung eines halbleiterlasers
US11832496B1 (en) * 2022-05-20 2023-11-28 Taiwan Semiconductor Manufacturing Company Ltd Color display with color filter layer comprising two-dimensional photonic crystals formed in a dielectric layer
CN116526294B (zh) * 2023-06-26 2023-11-10 苏州长光华芯光电技术股份有限公司 一种半导体发光结构及其制备方法、封装模组
CN120581958A (zh) * 2024-03-01 2025-09-02 华为技术有限公司 光子晶体面发射激光器及其制备方法、光模块、光设备
CN119726366B (zh) * 2025-02-28 2025-06-10 苏州实验室 衍射型面发射半导体激光器及其制备方法

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JP4027393B2 (ja) 2005-04-28 2007-12-26 キヤノン株式会社 面発光レーザ
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JP4027392B2 (ja) * 2005-04-28 2007-12-26 キヤノン株式会社 垂直共振器型面発光レーザ装置
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JP4350774B2 (ja) * 2007-07-31 2009-10-21 キヤノン株式会社 面発光レーザ

Also Published As

Publication number Publication date
US7879632B2 (en) 2011-02-01
EP2020711B1 (de) 2012-02-08
JP2009038063A (ja) 2009-02-19
JP4347369B2 (ja) 2009-10-21
EP2020711A1 (de) 2009-02-04
CN101359808B (zh) 2010-12-29
CN101359808A (zh) 2009-02-04
US20090035884A1 (en) 2009-02-05

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