JP2008078589A5 - - Google Patents

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Publication number
JP2008078589A5
JP2008078589A5 JP2006259469A JP2006259469A JP2008078589A5 JP 2008078589 A5 JP2008078589 A5 JP 2008078589A5 JP 2006259469 A JP2006259469 A JP 2006259469A JP 2006259469 A JP2006259469 A JP 2006259469A JP 2008078589 A5 JP2008078589 A5 JP 2008078589A5
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JP
Japan
Prior art keywords
insulating film
germanium
interface
semiconductor device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2006259469A
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English (en)
Japanese (ja)
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JP2008078589A (ja
JP4976796B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2006259469A priority Critical patent/JP4976796B2/ja
Priority claimed from JP2006259469A external-priority patent/JP4976796B2/ja
Priority to US11/690,428 priority patent/US7728379B2/en
Publication of JP2008078589A publication Critical patent/JP2008078589A/ja
Publication of JP2008078589A5 publication Critical patent/JP2008078589A5/ja
Application granted granted Critical
Publication of JP4976796B2 publication Critical patent/JP4976796B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006259469A 2006-09-25 2006-09-25 半導体装置 Expired - Fee Related JP4976796B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006259469A JP4976796B2 (ja) 2006-09-25 2006-09-25 半導体装置
US11/690,428 US7728379B2 (en) 2006-09-25 2007-03-23 Semiconductor device and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006259469A JP4976796B2 (ja) 2006-09-25 2006-09-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2008078589A JP2008078589A (ja) 2008-04-03
JP2008078589A5 true JP2008078589A5 (enExample) 2009-10-22
JP4976796B2 JP4976796B2 (ja) 2012-07-18

Family

ID=39224002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006259469A Expired - Fee Related JP4976796B2 (ja) 2006-09-25 2006-09-25 半導体装置

Country Status (2)

Country Link
US (1) US7728379B2 (enExample)
JP (1) JP4976796B2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4357526B2 (ja) * 2006-12-08 2009-11-04 株式会社東芝 不揮発性半導体メモリ装置およびその製造方法
JP2009231373A (ja) * 2008-03-19 2009-10-08 Toshiba Corp 不揮発性半導体記憶装置
JP5361294B2 (ja) * 2008-09-04 2013-12-04 株式会社東芝 不揮発性半導体記憶装置
JP2013197121A (ja) 2012-03-15 2013-09-30 Toshiba Corp 半導体装置及びその製造方法
JP2013214553A (ja) * 2012-03-30 2013-10-17 Toshiba Corp 半導体装置の製造方法及び半導体装置
US10020186B2 (en) * 2016-07-29 2018-07-10 Applied Materials, Inc. Silicon germanium selective oxidation process
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
CN111357090B (zh) 2017-11-11 2024-01-05 微材料有限责任公司 用于高压处理腔室的气体输送系统
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
CN111902929B (zh) 2018-03-09 2025-09-19 应用材料公司 用于含金属材料的高压退火处理
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10790183B2 (en) 2018-06-05 2020-09-29 Applied Materials, Inc. Selective oxidation for 3D device isolation
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4206137B2 (ja) * 1997-08-28 2009-01-07 フリースケール セミコンダクター インコーポレイテッド 半導体記憶装置及びその製造方法
JP5068402B2 (ja) 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法
KR100598049B1 (ko) * 2004-10-28 2006-07-07 삼성전자주식회사 멀티 비트 비휘발성 메모리 셀을 포함하는 반도체 소자 및그 제조 방법
KR100688504B1 (ko) * 2004-11-15 2007-03-02 삼성전자주식회사 이온주입을 이용한 비휘발성 메모리 소자 제조 방법 및이에 따른 소자
US7315474B2 (en) * 2005-01-03 2008-01-01 Macronix International Co., Ltd Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
KR100621545B1 (ko) * 2005-01-04 2006-09-19 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
US7253469B2 (en) * 2005-04-26 2007-08-07 Micron Technology, Inc. Flash memory device having a graded composition, high dielectric constant gate insulator
US7482651B2 (en) * 2005-12-09 2009-01-27 Micron Technology, Inc. Enhanced multi-bit non-volatile memory device with resonant tunnel barrier

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