JP2006024703A5 - - Google Patents

Claims (15)

A nitride semiconductor in which a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer are stacked in this order, and an electrode is formed on the second nitride semiconductor layer through a part of a buried film. A laser element,
The buried film contains at least oxygen, contains the same constituent element in addition to oxygen in the film thickness direction, and has an oxygen ratio that varies from the second nitride semiconductor layer side to the surface side. Nitride semiconductor laser device.   2. The nitride semiconductor laser device according to claim 1, wherein an oxygen ratio of the buried film is smaller on a surface side than on a second nitride semiconductor layer side. A nitride semiconductor in which a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer are stacked in this order, and an electrode is formed on the second nitride semiconductor layer through a part of a buried film. A laser element,
The nitride semiconductor laser element, wherein the buried film includes the same constituent element in the film thickness direction, and the density changes from the second nitride semiconductor layer side to the surface side.   The nitride semiconductor laser device according to claim 3, wherein the density of the buried film is larger on the surface side than on the second nitride semiconductor layer side.   5. The nitride semiconductor laser element according to claim 1, wherein the buried film has a refractive index that changes from the second nitride semiconductor layer side to the surface side. 6.   The nitride semiconductor laser element according to claim 5, wherein a refractive index of the buried film is larger on a surface side than on a second nitride semiconductor layer side.   The nitride semiconductor laser device according to claim 5 or 6, wherein the refractive index of the buried film on the second nitride semiconductor layer side is 2.20 or less and the refractive index of the buried film on the surface side is larger than 2.20.   The nitride semiconductor laser element according to claim 1, wherein the buried film is formed of a single layer.   The nitride semiconductor laser element according to claim 1, wherein the buried film is formed of a film having a laminated structure of two or more layers.   The nitride semiconductor laser element according to claim 1, wherein the buried film is formed of at least two layers, and the surface roughness of the layer on the second nitride semiconductor layer side and the layer on the surface side are different.   The nitride semiconductor laser device according to claim 10, wherein the surface of the layer on the outermost surface side of the buried film is flattest among the buried layers.   The nitride semiconductor laser element according to claim 1, wherein the buried film contains oxygen at least on the second nitride semiconductor layer side.   The nitride semiconductor laser element according to claim 1, wherein the buried film is made of an oxide at least on the second nitride semiconductor layer side.   The nitride semiconductor laser element according to claim 1, wherein the buried film is made of oxygen and zirconium. The nitride semiconductor laser element according to claim 1, wherein a ridge is formed on a surface of the second nitride semiconductor layer.