JP2004253801A5 - - Google Patents

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Publication number
JP2004253801A5
JP2004253801A5 JP2004041196A JP2004041196A JP2004253801A5 JP 2004253801 A5 JP2004253801 A5 JP 2004253801A5 JP 2004041196 A JP2004041196 A JP 2004041196A JP 2004041196 A JP2004041196 A JP 2004041196A JP 2004253801 A5 JP2004253801 A5 JP 2004253801A5
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JP
Japan
Prior art keywords
quantum well
semiconductor light
nitrogen
light emitting
emitting structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004041196A
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English (en)
Japanese (ja)
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JP2004253801A (ja
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Publication date
Priority claimed from US10/368,502 external-priority patent/US20040161006A1/en
Application filed filed Critical
Publication of JP2004253801A publication Critical patent/JP2004253801A/ja
Publication of JP2004253801A5 publication Critical patent/JP2004253801A5/ja
Withdrawn legal-status Critical Current

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JP2004041196A 2003-02-18 2004-02-18 改善された波長安定性を有するＩｎＧａＡｓＮ素子 Withdrawn JP2004253801A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/368,502 US20040161006A1 (en) 2003-02-18 2003-02-18 Method and apparatus for improving wavelength stability for InGaAsN devices

Publications (2)

Publication Number Publication Date
JP2004253801A JP2004253801A (ja) 2004-09-09
JP2004253801A5 true JP2004253801A5 (enExample) 2007-04-05

Family

ID=32850153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004041196A Withdrawn JP2004253801A (ja) 2003-02-18 2004-02-18 改善された波長安定性を有するＩｎＧａＡｓＮ素子

Country Status (2)

Country Link
US (1) US20040161006A1 (enExample)
JP (1) JP2004253801A (enExample)

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US7558305B2 (en) * 2003-12-31 2009-07-07 Wisconsin Alumni Research Foundation Intersubband mid-infrared electroluminescent semiconductor devices
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US9524869B2 (en) 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
US8253166B2 (en) * 2004-09-14 2012-08-28 Finisar Corporation Band offset in AlInGaP based light emitters to improve temperature performance
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