JPH1174607A5 - - Google Patents

Info

Publication number
JPH1174607A5
JPH1174607A5 JP1998175243A JP17524398A JPH1174607A5 JP H1174607 A5 JPH1174607 A5 JP H1174607A5 JP 1998175243 A JP1998175243 A JP 1998175243A JP 17524398 A JP17524398 A JP 17524398A JP H1174607 A5 JPH1174607 A5 JP H1174607A5
Authority
JP
Japan
Prior art keywords
layer
cladding
semiconductor laser
laser device
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998175243A
Other languages
English (en)
Japanese (ja)
Other versions
JP4219010B2 (ja
JPH1174607A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP17524398A priority Critical patent/JP4219010B2/ja
Priority claimed from JP17524398A external-priority patent/JP4219010B2/ja
Publication of JPH1174607A publication Critical patent/JPH1174607A/ja
Publication of JPH1174607A5 publication Critical patent/JPH1174607A5/ja
Application granted granted Critical
Publication of JP4219010B2 publication Critical patent/JP4219010B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP17524398A 1997-06-23 1998-06-23 半導体レーザ装置 Expired - Fee Related JP4219010B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17524398A JP4219010B2 (ja) 1997-06-23 1998-06-23 半導体レーザ装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP16574497 1997-06-23
JP9-165744 1997-06-23
JP17524398A JP4219010B2 (ja) 1997-06-23 1998-06-23 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JPH1174607A JPH1174607A (ja) 1999-03-16
JPH1174607A5 true JPH1174607A5 (enExample) 2005-10-20
JP4219010B2 JP4219010B2 (ja) 2009-02-04

Family

ID=26490362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17524398A Expired - Fee Related JP4219010B2 (ja) 1997-06-23 1998-06-23 半導体レーザ装置

Country Status (1)

Country Link
JP (1) JP4219010B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001223437A (ja) * 2000-02-07 2001-08-17 Hitachi Ltd 半導体レーザ装置
JP2001320134A (ja) * 2000-05-01 2001-11-16 Ricoh Co Ltd 半導体発光素子およびその製造方法並びに光送信モジュールおよび光送受信モジュールおよび光通信システムおよびコンピュータシステムおよびネットワークシステム
WO2002049171A1 (en) 2000-12-15 2002-06-20 Stanford University Laser diode with nitrogen incorporating barrier
US6803604B2 (en) 2001-03-13 2004-10-12 Ricoh Company, Ltd. Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device
US7180100B2 (en) 2001-03-27 2007-02-20 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
US7968362B2 (en) 2001-03-27 2011-06-28 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
WO2002080320A1 (fr) 2001-03-28 2002-10-10 Nichia Corporation Element semi-conducteur a base de nitrure
DE60225322T2 (de) * 2001-11-05 2009-02-26 Nichia Corp., Anan Halbleiterelement
US7016384B2 (en) * 2002-03-14 2006-03-21 Fuji Photo Film Co., Ltd. Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak
US7359418B2 (en) 2003-02-13 2008-04-15 Hamamatsu Photonics K.K. Quantum cascade laser
JP4494721B2 (ja) * 2003-02-13 2010-06-30 浜松ホトニクス株式会社 量子カスケードレーザ
JP2005051124A (ja) * 2003-07-30 2005-02-24 Sumitomo Electric Ind Ltd 面発光型半導体素子
JP4668529B2 (ja) * 2003-12-02 2011-04-13 株式会社日立製作所 ＧａＩｎＮＡｓ系半導体レーザ
JP4617684B2 (ja) * 2004-02-24 2011-01-26 ソニー株式会社 半導体レーザ素子
JP2005276928A (ja) * 2004-03-23 2005-10-06 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ装置
JPWO2006109418A1 (ja) * 2005-04-11 2008-10-09 三菱電機株式会社 半導体発光素子
JP2007250896A (ja) * 2006-03-16 2007-09-27 Sumitomo Electric Ind Ltd 半導体光素子
JP2007258269A (ja) 2006-03-20 2007-10-04 Sumitomo Electric Ind Ltd 半導体光素子
JP2008022040A (ja) * 2007-10-05 2008-01-31 Ricoh Co Ltd 半導体発光素子および光送信モジュールおよび光送受信モジュールおよび光通信システムおよびコンピュータシステムおよびネットワークシステム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931082A (ja) * 1982-08-16 1984-02-18 Agency Of Ind Science & Technol 半導体レ−ザ
JPH02224385A (ja) * 1989-02-27 1990-09-06 Nec Corp 半導体レーザ
JPH09219563A (ja) * 1996-02-09 1997-08-19 Hitachi Ltd 半導体光素子とそれを用いた応用システム
JP4071308B2 (ja) * 1996-08-27 2008-04-02 株式会社リコー 半導体発光素子及び半導体発光素子の製造方法及び光ファイバー通信システム
JPH10145003A (ja) * 1996-11-15 1998-05-29 Hitachi Ltd 半導体レーザおよび該半導体レーザを用いた光通信システム

Similar Documents

Publication Publication Date Title
JPH1174607A5 (enExample)
JP2004179428A (ja) 半導体発光素子
JPH05145178A (ja) 歪量子井戸半導体レーザ素子
EP0920096A3 (en) Semiconductor laser device
JP2004253801A5 (enExample)
JPH10209573A5 (enExample)
WO2007116713A1 (ja) 面発光素子
JP2003204122A5 (enExample)
US6992320B2 (en) Semiconductor optical device with quantum dots having internal tensile or compressive strain
JP4554526B2 (ja) 半導体発光素子
EP0936709A3 (en) Semiconductor laser
JP2004343147A5 (enExample)
JP2000174332A (ja) 半導体装置
JPH01264286A (ja) 半導体量子井戸レーザ
JP2002261393A5 (enExample)
EP1220393A3 (en) Semiconductor laser device having InGaAs compressive-strain active layer, GaAsP tensile-strain barrier layers and InGaP optical waveguide layers
JP2000058964A5 (enExample)
JP2004509478A5 (enExample)
JPH08307003A (ja) 半導体レーザ装置
JP2009158831A (ja) 半導体発光素子
JP2003243772A5 (enExample)
JPH0974243A (ja) 半導体レーザ
JP2004296845A (ja) 量子井戸構造および半導体発光素子および光送信モジュールおよび光伝送システム
JPH0974218A (ja) 半導体発光素子
JP2003078160A (ja) 発光素子およびその製造方法