JP4219010B2 - 半導体レーザ装置 - Google Patents

半導体レーザ装置 Download PDF

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Publication number
JP4219010B2
JP4219010B2 JP17524398A JP17524398A JP4219010B2 JP 4219010 B2 JP4219010 B2 JP 4219010B2 JP 17524398 A JP17524398 A JP 17524398A JP 17524398 A JP17524398 A JP 17524398A JP 4219010 B2 JP4219010 B2 JP 4219010B2
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JP
Japan
Prior art keywords
layer
type
semiconductor laser
active layer
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP17524398A
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English (en)
Japanese (ja)
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JPH1174607A5 (enExample
JPH1174607A (ja
Inventor
幸司 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
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Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP17524398A priority Critical patent/JP4219010B2/ja
Publication of JPH1174607A publication Critical patent/JPH1174607A/ja
Publication of JPH1174607A5 publication Critical patent/JPH1174607A5/ja
Application granted granted Critical
Publication of JP4219010B2 publication Critical patent/JP4219010B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Lasers (AREA)
JP17524398A 1997-06-23 1998-06-23 半導体レーザ装置 Expired - Fee Related JP4219010B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17524398A JP4219010B2 (ja) 1997-06-23 1998-06-23 半導体レーザ装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP16574497 1997-06-23
JP9-165744 1997-06-23
JP17524398A JP4219010B2 (ja) 1997-06-23 1998-06-23 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JPH1174607A JPH1174607A (ja) 1999-03-16
JPH1174607A5 JPH1174607A5 (enExample) 2005-10-20
JP4219010B2 true JP4219010B2 (ja) 2009-02-04

Family

ID=26490362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17524398A Expired - Fee Related JP4219010B2 (ja) 1997-06-23 1998-06-23 半導体レーザ装置

Country Status (1)

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JP (1) JP4219010B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001223437A (ja) * 2000-02-07 2001-08-17 Hitachi Ltd 半導体レーザ装置
JP2001320134A (ja) * 2000-05-01 2001-11-16 Ricoh Co Ltd 半導体発光素子およびその製造方法並びに光送信モジュールおよび光送受信モジュールおよび光通信システムおよびコンピュータシステムおよびネットワークシステム
WO2002049171A1 (en) 2000-12-15 2002-06-20 Stanford University Laser diode with nitrogen incorporating barrier
US6803604B2 (en) 2001-03-13 2004-10-12 Ricoh Company, Ltd. Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device
US7180100B2 (en) 2001-03-27 2007-02-20 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
US7968362B2 (en) 2001-03-27 2011-06-28 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
WO2002080320A1 (fr) 2001-03-28 2002-10-10 Nichia Corporation Element semi-conducteur a base de nitrure
DE60225322T2 (de) * 2001-11-05 2009-02-26 Nichia Corp., Anan Halbleiterelement
US7016384B2 (en) * 2002-03-14 2006-03-21 Fuji Photo Film Co., Ltd. Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak
US7359418B2 (en) 2003-02-13 2008-04-15 Hamamatsu Photonics K.K. Quantum cascade laser
JP4494721B2 (ja) * 2003-02-13 2010-06-30 浜松ホトニクス株式会社 量子カスケードレーザ
JP2005051124A (ja) * 2003-07-30 2005-02-24 Sumitomo Electric Ind Ltd 面発光型半導体素子
JP4668529B2 (ja) * 2003-12-02 2011-04-13 株式会社日立製作所 ＧａＩｎＮＡｓ系半導体レーザ
JP4617684B2 (ja) * 2004-02-24 2011-01-26 ソニー株式会社 半導体レーザ素子
JP2005276928A (ja) * 2004-03-23 2005-10-06 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ装置
JPWO2006109418A1 (ja) * 2005-04-11 2008-10-09 三菱電機株式会社 半導体発光素子
JP2007250896A (ja) * 2006-03-16 2007-09-27 Sumitomo Electric Ind Ltd 半導体光素子
JP2007258269A (ja) 2006-03-20 2007-10-04 Sumitomo Electric Ind Ltd 半導体光素子
JP2008022040A (ja) * 2007-10-05 2008-01-31 Ricoh Co Ltd 半導体発光素子および光送信モジュールおよび光送受信モジュールおよび光通信システムおよびコンピュータシステムおよびネットワークシステム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931082A (ja) * 1982-08-16 1984-02-18 Agency Of Ind Science & Technol 半導体レ−ザ
JPH02224385A (ja) * 1989-02-27 1990-09-06 Nec Corp 半導体レーザ
JPH09219563A (ja) * 1996-02-09 1997-08-19 Hitachi Ltd 半導体光素子とそれを用いた応用システム
JP4071308B2 (ja) * 1996-08-27 2008-04-02 株式会社リコー 半導体発光素子及び半導体発光素子の製造方法及び光ファイバー通信システム
JPH10145003A (ja) * 1996-11-15 1998-05-29 Hitachi Ltd 半導体レーザおよび該半導体レーザを用いた光通信システム

Also Published As

Publication number Publication date
JPH1174607A (ja) 1999-03-16

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