AU2002231019A1 - Laser diode with nitrogen incorporating barrier - Google Patents

Laser diode with nitrogen incorporating barrier

Info

Publication number
AU2002231019A1
AU2002231019A1 AU2002231019A AU3101902A AU2002231019A1 AU 2002231019 A1 AU2002231019 A1 AU 2002231019A1 AU 2002231019 A AU2002231019 A AU 2002231019A AU 3101902 A AU3101902 A AU 3101902A AU 2002231019 A1 AU2002231019 A1 AU 2002231019A1
Authority
AU
Australia
Prior art keywords
laser diode
nitrogen
incorporating barrier
barrier
nitrogen incorporating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002231019A
Inventor
Christopher Coldren
James S. Harris
Michael C. Larson
Sylvia Spruytte
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leland Stanford Junior University
Original Assignee
Leland Stanford Junior University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/738,534 external-priority patent/US20020075920A1/en
Application filed by Leland Stanford Junior University filed Critical Leland Stanford Junior University
Publication of AU2002231019A1 publication Critical patent/AU2002231019A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H01S5/32366—(In)GaAs with small amount of N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
AU2002231019A 2000-12-15 2001-12-12 Laser diode with nitrogen incorporating barrier Abandoned AU2002231019A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US73890700A 2000-12-15 2000-12-15
US09/738,907 2000-12-15
US09/738,534 2000-12-15
US09/738,534 US20020075920A1 (en) 2000-12-15 2000-12-15 Laser diode device with nitrogen incorporating barrier
PCT/US2001/049020 WO2002049171A1 (en) 2000-12-15 2001-12-12 Laser diode with nitrogen incorporating barrier

Publications (1)

Publication Number Publication Date
AU2002231019A1 true AU2002231019A1 (en) 2002-06-24

Family

ID=27113387

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002231019A Abandoned AU2002231019A1 (en) 2000-12-15 2001-12-12 Laser diode with nitrogen incorporating barrier

Country Status (3)

Country Link
US (2) US6798809B1 (en)
AU (1) AU2002231019A1 (en)
WO (1) WO2002049171A1 (en)

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US6803989B2 (en) * 1997-07-15 2004-10-12 Silverbrook Research Pty Ltd Image printing apparatus including a microcontroller
US7408964B2 (en) * 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
WO2002078144A1 (en) * 2001-03-27 2002-10-03 Sharp Kabushiki Kaisha Semiconductor device and method of crystal growth
US7126750B2 (en) * 2002-07-08 2006-10-24 John Gilmary Wasserbauer Folded cavity semiconductor optical amplifier (FCSOA)
US6927412B2 (en) * 2002-11-21 2005-08-09 Ricoh Company, Ltd. Semiconductor light emitter
JP2005286196A (en) * 2004-03-30 2005-10-13 Sumitomo Electric Ind Ltd Optically integrated device
JP2005286192A (en) * 2004-03-30 2005-10-13 Sumitomo Electric Ind Ltd Optically integrated device
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
WO2006039341A2 (en) 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
KR100691283B1 (en) * 2005-09-23 2007-03-12 삼성전기주식회사 Nitride semiconductor device
FR2898434B1 (en) * 2006-03-13 2008-05-23 Centre Nat Rech Scient MONOLITHIC WHITE ELECTROLUMINESCENT DIODE
CN101447644B (en) * 2007-11-28 2010-11-10 中国科学院长春光学精密机械与物理研究所 Electric pump surface-emitting coupled organic laser device with microcavity
US8202788B2 (en) * 2008-06-26 2012-06-19 Nanyang Technological University Method for fabricating GaNAsSb semiconductor
US8232470B2 (en) * 2009-09-11 2012-07-31 Rosestreet Labs Energy, Inc. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers
US9153699B2 (en) 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
CN103077886A (en) * 2013-02-04 2013-05-01 中国科学院半导体研究所 Growing method of InP (indium phosphide)-based InAs (indium arsenide) quantum well material using antinomy as surface active agent
EP3834224A1 (en) 2018-08-09 2021-06-16 Array Photonics, Inc. Hydrogen diffusion barrier for hybrid semiconductor growth
EP3935444A1 (en) 2019-03-08 2022-01-12 Array Photonics, Inc. Electronic devices having displays with infrared components behind the displays
US20210194216A1 (en) 2019-12-24 2021-06-24 Array Photonics, Inc. Stacked semiconductor lasers with controlled spectral emission
US20210234063A1 (en) 2020-01-24 2021-07-29 Array Photonics, Inc. Broadband Dilute Nitride Light Emitters for Imaging and Sensing Applications
US20210305782A1 (en) 2020-03-25 2021-09-30 Array Photonics, Inc. Intracavity contact vcsel structure and method for forming the same

Family Cites Families (22)

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US4599728A (en) * 1983-07-11 1986-07-08 At&T Bell Laboratories Multi-quantum well laser emitting at 1.5 μm
US5068868A (en) 1990-05-21 1991-11-26 At&T Bell Laboratories Vertical cavity surface emitting lasers with electrically conducting mirrors
JPH07226566A (en) 1994-02-10 1995-08-22 Nec Corp Quantum well semiconductor laser and its manufacture
US5689123A (en) 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
US5937274A (en) 1995-01-31 1999-08-10 Hitachi, Ltd. Fabrication method for AlGaIn NPAsSb based devices
US6072817A (en) 1995-03-31 2000-06-06 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and optical disk apparatus using the same
US5638392A (en) 1995-05-15 1997-06-10 Motorola Short wavelength VCSEL
US5757830A (en) 1996-02-07 1998-05-26 Massachusetts Institute Of Technology Compact micro-optical edge-emitting semiconductor laser assembly
JPH09283857A (en) 1996-04-11 1997-10-31 Ricoh Co Ltd Semiconductor manufacturing method and semiconductor element
JP2905739B2 (en) 1996-04-24 1999-06-14 株式会社エイ・ティ・アール光電波通信研究所 All-optical semiconductor image storage device and its image storage and erasing method, and all-optical semiconductor logical operation device and its logical operation method
US6233264B1 (en) * 1996-08-27 2001-05-15 Ricoh Company, Ltd. Optical semiconductor device having an active layer containing N
JP3788831B2 (en) 1996-08-30 2006-06-21 株式会社リコー Semiconductor device and manufacturing method thereof
US5719894A (en) 1996-09-25 1998-02-17 Picolight Incorporated Extended wavelength strained layer lasers having nitrogen disposed therein
JPH10145003A (en) * 1996-11-15 1998-05-29 Hitachi Ltd Semiconductor laser and optical communication system using the same
JPH10233557A (en) * 1997-02-18 1998-09-02 Ricoh Co Ltd Semiconductor light emitting element
US5936929A (en) 1997-05-02 1999-08-10 Motorola, Inc. Optical submodule and method for making
JP4219010B2 (en) * 1997-06-23 2009-02-04 シャープ株式会社 Semiconductor laser device
JPH1174807A (en) 1997-08-29 1999-03-16 Mitsubishi Electric Corp Phase synchronization device
US6563851B1 (en) * 1998-04-13 2003-05-13 Ricoh Company, Ltd. Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band
US6207973B1 (en) * 1998-08-19 2001-03-27 Ricoh Company, Ltd. Light emitting devices with layered III-V semiconductor structures
JP2000277867A (en) * 1999-03-24 2000-10-06 Hitachi Ltd Semiconductor laser device
US7088753B2 (en) 2000-01-13 2006-08-08 Infineon Technologies Ag Semiconductor laser structure

Also Published As

Publication number Publication date
WO2002049171A9 (en) 2003-05-01
US20060039432A1 (en) 2006-02-23
US6798809B1 (en) 2004-09-28
WO2002049171B1 (en) 2003-02-20
US7645626B2 (en) 2010-01-12
WO2002049171A1 (en) 2002-06-20

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