JP2004253801A - 改善された波長安定性を有するＩｎＧａＡｓＮ素子 - Google Patents

改善された波長安定性を有するＩｎＧａＡｓＮ素子 Download PDF

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Publication number
JP2004253801A
JP2004253801A JP2004041196A JP2004041196A JP2004253801A JP 2004253801 A JP2004253801 A JP 2004253801A JP 2004041196 A JP2004041196 A JP 2004041196A JP 2004041196 A JP2004041196 A JP 2004041196A JP 2004253801 A JP2004253801 A JP 2004253801A
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Japan
Prior art keywords
nitrogen
quantum well
well layer
light emitting
semiconductor light
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Japanese (ja)
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JP2004253801A5 (enExample
Inventor
Ying-Lan Chang
イン−ラン・チャン
Tetsuya Takeuchi
テツヤ・タケウチ
Danny E Mars
ダニー・イー・マーズ
David P Bour
デイビッド・ピー・ボア
Michael R T Tan
マイケル・アール・ティー・タン
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Agilent Technologies Inc
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Agilent Technologies Inc
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Publication of JP2004253801A publication Critical patent/JP2004253801A/ja
Publication of JP2004253801A5 publication Critical patent/JP2004253801A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H01S5/32366—(In)GaAs with small amount of N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/3436—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)P
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2004041196A 2003-02-18 2004-02-18 改善された波長安定性を有するＩｎＧａＡｓＮ素子 Withdrawn JP2004253801A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/368,502 US20040161006A1 (en) 2003-02-18 2003-02-18 Method and apparatus for improving wavelength stability for InGaAsN devices

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JP2004253801A true JP2004253801A (ja) 2004-09-09
JP2004253801A5 JP2004253801A5 (enExample) 2007-04-05

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US (1) US20040161006A1 (enExample)
JP (1) JP2004253801A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250878A (ja) * 2006-03-16 2007-09-27 Sumitomo Electric Ind Ltd 半導体光デバイス
JP2018531514A (ja) * 2015-10-08 2018-10-25 オステンド・テクノロジーズ・インコーポレーテッド 琥珀色〜赤色の発光（＞６００ｎｍ）を有するＩＩＩ族窒化物半導体発光デバイス及びこれを作製するための方法
US11258233B2 (en) 2017-12-27 2022-02-22 Kabushiki Kaisha Toshiba Quantum cascade laser

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6927412B2 (en) * 2002-11-21 2005-08-09 Ricoh Company, Ltd. Semiconductor light emitter
US7359418B2 (en) * 2003-02-13 2008-04-15 Hamamatsu Photonics K.K. Quantum cascade laser
KR100476567B1 (ko) * 2003-09-26 2005-03-17 삼성전기주식회사 질화물 반도체 소자
US7558305B2 (en) * 2003-12-31 2009-07-07 Wisconsin Alumni Research Foundation Intersubband mid-infrared electroluminescent semiconductor devices
KR20050073740A (ko) * 2004-01-10 2005-07-18 삼성전자주식회사 이중 장벽층을 구비하는 양자우물 구조체를 포함하는반도체 소자 및 이를 채용한 반도체 레이저 및 그 제조 방법
US8562738B2 (en) 2004-03-11 2013-10-22 Epistar Corporation Nitride-based light-emitting device
US7928424B2 (en) * 2004-03-11 2011-04-19 Epistar Corporation Nitride-based light-emitting device
US9524869B2 (en) 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
US8253166B2 (en) * 2004-09-14 2012-08-28 Finisar Corporation Band offset in AlInGaP based light emitters to improve temperature performance
US20060198412A1 (en) * 2005-03-07 2006-09-07 Johnson Ralph H Grating-coupled surface emitting laser with gallium arsenide substrate
JP4367393B2 (ja) * 2005-09-30 2009-11-18 日立電線株式会社 透明導電膜を備えた半導体発光素子
US7713803B2 (en) * 2007-03-29 2010-05-11 Intel Corporation Mechanism for forming a remote delta doping layer of a quantum well structure
WO2010024436A1 (ja) * 2008-08-29 2010-03-04 株式会社 東芝 半導体装置
JP2010118454A (ja) * 2008-11-12 2010-05-27 Sumitomo Electric Device Innovations Inc 半導体レーザ
JP5434131B2 (ja) * 2009-02-24 2014-03-05 富士通株式会社 多波長レーザ素子及びその製造方法
US8605765B2 (en) * 2011-01-04 2013-12-10 Avago Technologies General Ip (Singapore) Pte. Ltd. VCSEL with surface filtering structures
WO2016118132A1 (en) * 2015-01-22 2016-07-28 Hewlett Packard Enterprise Development Lp Monolithic wdm vcsel arrays by quantum well intermixing
US9306115B1 (en) * 2015-02-10 2016-04-05 Epistar Corporation Light-emitting device
WO2016195695A1 (en) 2015-06-04 2016-12-08 Hewlett Packard Enterprise Development Lp Monolithic wdm vcsels with spatially varying gain peak and fabry perot wavelength
KR20220058643A (ko) 2015-06-05 2022-05-09 오스텐도 테크놀로지스 인코포레이티드 다수의 활성층들로 선택적으로 캐리어를 주입한 발광 구조체
US10043941B1 (en) * 2017-01-31 2018-08-07 International Business Machines Corporation Light emitting diode having improved quantum efficiency at low injection current
WO2022101858A1 (en) * 2020-11-12 2022-05-19 Denselight Semiconductors Pte Ltd Mixed strain multi-quantum well superluminescent light emitting diode

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2500617B2 (ja) * 1993-06-25 1996-05-29 日本電気株式会社 屈折率制御光半導体構造
US5436925A (en) * 1994-03-01 1995-07-25 Hewlett-Packard Company Colliding pulse mode-locked fiber ring laser using a semiconductor saturable absorber
US5689123A (en) * 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
US5937274A (en) * 1995-01-31 1999-08-10 Hitachi, Ltd. Fabrication method for AlGaIn NPAsSb based devices
JPH09283857A (ja) * 1996-04-11 1997-10-31 Ricoh Co Ltd 半導体の製造方法及び半導体素子
US5719895A (en) * 1996-09-25 1998-02-17 Picolight Incorporated Extended wavelength strained layer lasers having short period superlattices
US5825796A (en) * 1996-09-25 1998-10-20 Picolight Incorporated Extended wavelength strained layer lasers having strain compensated layers
US6936839B2 (en) * 1996-10-16 2005-08-30 The University Of Connecticut Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same
SE511314C2 (sv) * 1997-02-07 1999-09-06 Ericsson Telefon Ab L M Framställning av heterobipolär transistor och laserdiod på samma substrat
US5835521A (en) * 1997-02-10 1998-11-10 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
JP3683669B2 (ja) * 1997-03-21 2005-08-17 株式会社リコー 半導体発光素子
US6015979A (en) * 1997-08-29 2000-01-18 Kabushiki Kaisha Toshiba Nitride-based semiconductor element and method for manufacturing the same
US6160830A (en) * 1998-03-04 2000-12-12 Motorola, Inc. Semiconductor laser device and method of manufacture
US6137817A (en) * 1998-06-12 2000-10-24 Lucent Technologies Inc. Quantum cascade laser
US6657233B2 (en) * 1998-08-19 2003-12-02 Ricoh Company, Ltd. Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device
US6650673B2 (en) * 1998-12-15 2003-11-18 Bookham Technology, Plc Generation of short optical pulses using strongly complex coupled DFB lasers
US6922426B2 (en) * 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
WO2001026192A1 (en) * 1999-10-07 2001-04-12 Maxion Technologies, Inc. Parallel cascade quantum well light emitting device
US6424669B1 (en) * 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
US6472680B1 (en) * 1999-12-31 2002-10-29 Matsushita Electric Industrial Co., Ltd. Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation
WO2001052373A2 (de) * 2000-01-13 2001-07-19 Infineon Technologies Ag Halbleiterlaserstruktur
US6600169B2 (en) * 2000-09-22 2003-07-29 Andreas Stintz Quantum dash device
US20020075920A1 (en) * 2000-12-15 2002-06-20 Sylvia Spruytte Laser diode device with nitrogen incorporating barrier
AU2002243061A1 (en) * 2001-03-28 2002-10-15 Neotek Research Co., Ltd. Semiconductor quantum dot optical amplifier, and optical amplifier module and optical transmission system using the same
JP4627132B2 (ja) * 2001-09-13 2011-02-09 シャープ株式会社 半導体レーザ装置および光ディスク記録再生装置
US6756325B2 (en) * 2002-05-07 2004-06-29 Agilent Technologies, Inc. Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region
US6858519B2 (en) * 2002-08-14 2005-02-22 Finisar Corporation Atomic hydrogen as a surfactant in production of highly strained InGaAs, InGaAsN, InGaAsNSb, and/or GaAsNSb quantum wells
US6927412B2 (en) * 2002-11-21 2005-08-09 Ricoh Company, Ltd. Semiconductor light emitter
US6878959B2 (en) * 2002-11-22 2005-04-12 Agilent Technologies, Inc. Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice
US6887727B2 (en) * 2003-01-28 2005-05-03 Agilent Technologies, Inc. System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element
US6931044B2 (en) * 2003-02-18 2005-08-16 Agilent Technologies, Inc. Method and apparatus for improving temperature performance for GaAsSb/GaAs devices
US6878970B2 (en) * 2003-04-17 2005-04-12 Agilent Technologies, Inc. Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells
KR20060028479A (ko) * 2003-07-02 2006-03-29 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 장치 및 제조 방법, 양자 우물 구조체 제조 방법
US7282732B2 (en) * 2003-10-24 2007-10-16 Stc. Unm Quantum dot structures
US7358523B2 (en) * 2004-10-20 2008-04-15 Avago Technologies Fiber Ip Pte Ltd Method and structure for deep well structures for long wavelength active regions

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250878A (ja) * 2006-03-16 2007-09-27 Sumitomo Electric Ind Ltd 半導体光デバイス
JP2018531514A (ja) * 2015-10-08 2018-10-25 オステンド・テクノロジーズ・インコーポレーテッド 琥珀色〜赤色の発光（＞６００ｎｍ）を有するＩＩＩ族窒化物半導体発光デバイス及びこれを作製するための方法
JP2022071179A (ja) * 2015-10-08 2022-05-13 オステンド・テクノロジーズ・インコーポレーテッド 琥珀色～赤色の発光を有するｉｉｉ族窒化物半導体発光ｌｅｄ
US11258233B2 (en) 2017-12-27 2022-02-22 Kabushiki Kaisha Toshiba Quantum cascade laser

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