JP2001168384A5 - - Google Patents

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Publication number
JP2001168384A5
JP2001168384A5 JP1999349174A JP34917499A JP2001168384A5 JP 2001168384 A5 JP2001168384 A5 JP 2001168384A5 JP 1999349174 A JP1999349174 A JP 1999349174A JP 34917499 A JP34917499 A JP 34917499A JP 2001168384 A5 JP2001168384 A5 JP 2001168384A5
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JP
Japan
Prior art keywords
layer
nitride semiconductor
light emitting
main peak
well layer
Prior art date
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Granted
Application number
JP1999349174A
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English (en)
Japanese (ja)
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JP4501194B2 (ja
JP2001168384A (ja
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Priority to JP34917499A priority Critical patent/JP4501194B2/ja
Priority claimed from JP34917499A external-priority patent/JP4501194B2/ja
Publication of JP2001168384A publication Critical patent/JP2001168384A/ja
Publication of JP2001168384A5 publication Critical patent/JP2001168384A5/ja
Application granted granted Critical
Publication of JP4501194B2 publication Critical patent/JP4501194B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP34917499A 1999-12-08 1999-12-08 窒化物半導体発光素子 Expired - Fee Related JP4501194B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34917499A JP4501194B2 (ja) 1999-12-08 1999-12-08 窒化物半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34917499A JP4501194B2 (ja) 1999-12-08 1999-12-08 窒化物半導体発光素子

Publications (3)

Publication Number Publication Date
JP2001168384A JP2001168384A (ja) 2001-06-22
JP2001168384A5 true JP2001168384A5 (enExample) 2007-02-01
JP4501194B2 JP4501194B2 (ja) 2010-07-14

Family

ID=18401980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34917499A Expired - Fee Related JP4501194B2 (ja) 1999-12-08 1999-12-08 窒化物半導体発光素子

Country Status (1)

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JP (1) JP4501194B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002176198A (ja) * 2000-12-11 2002-06-21 Mitsubishi Cable Ind Ltd 多波長発光素子
JP2003218396A (ja) * 2001-11-15 2003-07-31 Mitsubishi Cable Ind Ltd 紫外線発光素子
US6774402B2 (en) 2002-03-12 2004-08-10 Showa Denko Kabushiki Kaisha Pn-juction type compound semiconductor light-emitting device, production method thereof and white light-emitting diode
JPWO2005020396A1 (ja) * 2003-08-26 2006-10-19 ソニー株式会社 ＧａＮ系ＩＩＩ−Ｖ族化合物半導体発光素子及びその製造方法
JP4574417B2 (ja) * 2005-03-31 2010-11-04 シャープ株式会社 光源モジュール、バックライトユニット、液晶表示装置
JP2007214384A (ja) 2006-02-09 2007-08-23 Rohm Co Ltd 窒化物半導体素子
JP2010503228A (ja) * 2006-09-08 2010-01-28 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ 波長可変発光ダイオード
JP5179055B2 (ja) * 2006-12-26 2013-04-10 昭和電工株式会社 Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JPWO2008155958A1 (ja) * 2007-06-15 2010-08-26 ローム株式会社 半導体発光素子及び半導体発光素子の製造方法
US12095001B2 (en) * 2020-04-16 2024-09-17 Seoul Viosys Co., Ltd. Single chip multi band LED
CN113140657B (zh) * 2021-05-13 2022-04-19 西安瑞芯光通信息科技有限公司 一种紫外led外延结构及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08274369A (ja) * 1995-03-30 1996-10-18 Furukawa Electric Co Ltd:The 発光素子及びその製造方法
JP3543498B2 (ja) * 1996-06-28 2004-07-14 豊田合成株式会社 ３族窒化物半導体発光素子
JP3189723B2 (ja) * 1997-02-27 2001-07-16 住友電気工業株式会社 面発光型半導体装置及びそれを用いた発光モジュール
JPH11121806A (ja) * 1997-10-21 1999-04-30 Sharp Corp 半導体発光素子
JPH11233827A (ja) * 1998-02-10 1999-08-27 Furukawa Electric Co Ltd:The 半導体発光素子

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