JP2000058906A5 - - Google Patents

Download PDF

Info

Publication number
JP2000058906A5
JP2000058906A5 JP1999209901A JP20990199A JP2000058906A5 JP 2000058906 A5 JP2000058906 A5 JP 2000058906A5 JP 1999209901 A JP1999209901 A JP 1999209901A JP 20990199 A JP20990199 A JP 20990199A JP 2000058906 A5 JP2000058906 A5 JP 2000058906A5
Authority
JP
Japan
Prior art keywords
layer
active
light emitting
emitting element
element according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999209901A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000058906A (ja
Filing date
Publication date
Priority claimed from US09/122,568 external-priority patent/US20010020703A1/en
Application filed filed Critical
Publication of JP2000058906A publication Critical patent/JP2000058906A/ja
Publication of JP2000058906A5 publication Critical patent/JP2000058906A5/ja
Pending legal-status Critical Current

Links

JP20990199A 1998-07-24 1999-07-23 発光素子 Pending JP2000058906A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US122,568 1998-07-24
US09/122,568 US20010020703A1 (en) 1998-07-24 1998-07-24 Algainp light emitting devices with thin active layers

Publications (2)

Publication Number Publication Date
JP2000058906A JP2000058906A (ja) 2000-02-25
JP2000058906A5 true JP2000058906A5 (enExample) 2006-11-02

Family

ID=22403472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20990199A Pending JP2000058906A (ja) 1998-07-24 1999-07-23 発光素子

Country Status (6)

Country Link
US (2) US20010020703A1 (enExample)
JP (1) JP2000058906A (enExample)
KR (1) KR100734638B1 (enExample)
DE (1) DE19911701B4 (enExample)
GB (1) GB2339965A (enExample)
TW (1) TW410485B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6469314B1 (en) * 1999-12-21 2002-10-22 Lumileds Lighting U.S., Llc Thin multi-well active layer LED with controlled oxygen doping
JP2002151734A (ja) * 2000-09-04 2002-05-24 Sharp Corp 発光ダイオード
JP2002111052A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体発光素子及びその製造方法
US6891202B2 (en) 2001-12-14 2005-05-10 Infinera Corporation Oxygen-doped Al-containing current blocking layers in active semiconductor devices
US7528417B2 (en) 2003-02-10 2009-05-05 Showa Denko K.K. Light-emitting diode device and production method thereof
EP1735838B1 (en) * 2004-04-15 2011-10-05 Trustees of Boston University Optical devices featuring textured semiconductor layers
US8035113B2 (en) * 2004-04-15 2011-10-11 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
JP4225510B2 (ja) * 2005-07-06 2009-02-18 昭和電工株式会社 化合物半導体発光ダイオードおよびその製造方法
DE102005047168A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US8212262B2 (en) 2007-02-09 2012-07-03 Cree, Inc. Transparent LED chip
US8692286B2 (en) 2007-12-14 2014-04-08 Philips Lumileds Lighing Company LLC Light emitting device with bonded interface
WO2009111790A1 (en) * 2008-03-07 2009-09-11 Trustees Of Boston University Optical devices featuring nonpolar textured semiconductor layers
JP5315899B2 (ja) * 2008-09-30 2013-10-16 信越半導体株式会社 発光素子
JP5309971B2 (ja) * 2008-12-24 2013-10-09 信越半導体株式会社 発光素子
JP5608589B2 (ja) * 2011-03-10 2014-10-15 スタンレー電気株式会社 半導体発光素子および半導体発光素子の製造方法
KR101513803B1 (ko) * 2013-10-02 2015-04-20 광전자 주식회사 투명 기판 위에 직접 성장된 고 효율 AlGaInP 발광다이오드 및 그 제조방법
KR102124416B1 (ko) * 2013-11-05 2020-06-19 삼성디스플레이 주식회사 유기 발광 다이오드, 유기 발광 표시 장치의 화소, 및 유기 발광 표시 장치
KR102098937B1 (ko) * 2014-01-27 2020-04-08 엘지이노텍 주식회사 발광소자
WO2017023535A1 (en) * 2015-07-31 2017-02-09 Sxaymiq Technologies Llc Light emitting diode with displaced p-type doping
WO2023038457A1 (en) * 2021-09-09 2023-03-16 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
CN114038960A (zh) * 2021-09-09 2022-02-11 重庆康佳光电技术研究院有限公司 微发光二极管磊晶结构及其制造方法、微发光二极管

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE423598B (sv) * 1981-06-29 1982-05-17 Power System Ab Forfarande och anordning for avskermning av aerosolpartiklar i bildskermsmiljoer
US5060028A (en) 1989-01-19 1991-10-22 Hewlett-Packard Company High band-gap opto-electronic device
JP3290672B2 (ja) * 1990-08-20 2002-06-10 株式会社東芝 半導体発光ダイオード
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5008718A (en) 1989-12-18 1991-04-16 Fletcher Robert M Light-emitting diode with an electrically conductive window
JPH04306886A (ja) * 1991-04-03 1992-10-29 Mitsubishi Electric Corp 半導体発光素子
US5233204A (en) 1992-01-10 1993-08-03 Hewlett-Packard Company Light-emitting diode with a thick transparent layer
JP3373561B2 (ja) * 1992-09-30 2003-02-04 株式会社東芝 発光ダイオード
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
JP2778454B2 (ja) * 1994-03-07 1998-07-23 日本電気株式会社 半導体レーザ
US5639674A (en) * 1994-03-14 1997-06-17 Kabushiki Kaisha Toshiba Semiconductor light-emitting element and method for manufacturing therefor
JPH08125285A (ja) * 1994-09-01 1996-05-17 Mitsubishi Chem Corp 半導体発光装置
US5811839A (en) * 1994-09-01 1998-09-22 Mitsubishi Chemical Corporation Semiconductor light-emitting devices
JP3622292B2 (ja) * 1994-10-24 2005-02-23 三菱化学株式会社 半導体発光装置
JP3124694B2 (ja) * 1995-02-15 2001-01-15 三菱電線工業株式会社 半導体発光素子
JPH08288544A (ja) * 1995-04-14 1996-11-01 Toshiba Corp 半導体発光素子
TW319916B (enExample) * 1995-06-05 1997-11-11 Hewlett Packard Co
DE19524655A1 (de) * 1995-07-06 1997-01-09 Huang Kuo Hsin LED-Struktur
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
JP3635757B2 (ja) * 1995-12-28 2005-04-06 昭和電工株式会社 ＡｌＧａＩｎＰ発光ダイオード
JP3643665B2 (ja) * 1996-12-20 2005-04-27 シャープ株式会社 半導体発光素子
US5917201A (en) * 1997-08-07 1999-06-29 Epistar Co. Light emitting diode with asymmetrical energy band structure

Similar Documents

Publication Publication Date Title
JP2000058906A5 (enExample)
JP3332491B2 (ja) 有機ｅｌ素子
JP2008529271A5 (enExample)
US7863599B2 (en) Light emitting diode
EP1403932B1 (en) Light emitting nitride semiconductor device
JP3631157B2 (ja) 紫外発光ダイオード
CN101771120B (zh) 半导体发光元件
EP1667292A4 (en) SEMICONDUCTOR SEMICONDUCTOR COMPONENT OF GAN III-V COMPOSITION AND METHOD OF MANUFACTURING THEREOF
WO2003041234A1 (en) Semiconductor element
TWI282182B (en) Thin-film LED with an electric current expansion structure
CA2376453A1 (en) Nitride semiconductor device
KR100930760B1 (ko) 유기 발광 다이오드
JP2002252371A5 (enExample)
KR101460387B1 (ko) 발광 구조물
JP2000174339A (ja) ＧａＮ系半導体発光素子およびＧａＮ系半導体受光素子
JP2006324685A5 (enExample)
JPH0738150A (ja) 半導体発光装置
US7986093B2 (en) Organic electroluminescent diode and diode panel with anti-reflective coating conducive to the emission of light
JP2010040838A5 (enExample)
JP5514819B2 (ja) オプトエレクトロニクス半導体チップ
JP2006252866A (ja) エレクトロルミネッセンス素子
JP2004200303A (ja) 発光ダイオード
JP2001168384A5 (enExample)
JP4150909B2 (ja) 発光ダイオード
JP5388469B2 (ja) 発光素子