KR100734638B1 - 발광 소자 - Google Patents

발광 소자 Download PDF

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Publication number
KR100734638B1
KR100734638B1 KR1019990029926A KR19990029926A KR100734638B1 KR 100734638 B1 KR100734638 B1 KR 100734638B1 KR 1019990029926 A KR1019990029926 A KR 1019990029926A KR 19990029926 A KR19990029926 A KR 19990029926A KR 100734638 B1 KR100734638 B1 KR 100734638B1
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South Korea
Prior art keywords
layer
active region
led
active layer
thickness
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Expired - Lifetime
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KR1019990029926A
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English (en)
Korean (ko)
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KR20000011917A (ko
Inventor
가드너나탄에프
키시프레드에이
추이허만씨
스톡만스테펜에이
카라메스마이클알
호프러글로리아이
코코트크리스토퍼
몰니콜라스제이
Original Assignee
필립스 루미리즈 라이팅 캄파니 엘엘씨
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Publication of KR20000011917A publication Critical patent/KR20000011917A/ko
Application granted granted Critical
Publication of KR100734638B1 publication Critical patent/KR100734638B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants

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  • Led Devices (AREA)
KR1019990029926A 1998-07-24 1999-07-23 발광 소자 Expired - Lifetime KR100734638B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/122,568 US20010020703A1 (en) 1998-07-24 1998-07-24 Algainp light emitting devices with thin active layers
US9/122,568 1998-07-24
US09/122,568 1998-07-24

Publications (2)

Publication Number Publication Date
KR20000011917A KR20000011917A (ko) 2000-02-25
KR100734638B1 true KR100734638B1 (ko) 2007-07-02

Family

ID=22403472

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990029926A Expired - Lifetime KR100734638B1 (ko) 1998-07-24 1999-07-23 발광 소자

Country Status (6)

Country Link
US (2) US20010020703A1 (enExample)
JP (1) JP2000058906A (enExample)
KR (1) KR100734638B1 (enExample)
DE (1) DE19911701B4 (enExample)
GB (1) GB2339965A (enExample)
TW (1) TW410485B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150051625A (ko) * 2013-11-05 2015-05-13 삼성디스플레이 주식회사 유기 발광 다이오드, 유기 발광 표시 장치의 화소, 및 유기 발광 표시 장치

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US6469314B1 (en) * 1999-12-21 2002-10-22 Lumileds Lighting U.S., Llc Thin multi-well active layer LED with controlled oxygen doping
JP2002151734A (ja) * 2000-09-04 2002-05-24 Sharp Corp 発光ダイオード
JP2002111052A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体発光素子及びその製造方法
US6891202B2 (en) 2001-12-14 2005-05-10 Infinera Corporation Oxygen-doped Al-containing current blocking layers in active semiconductor devices
US7528417B2 (en) 2003-02-10 2009-05-05 Showa Denko K.K. Light-emitting diode device and production method thereof
ATE527571T1 (de) * 2004-04-15 2011-10-15 Univ Boston Optische bauelemente mit texturierten halbleiterschichten
US8035113B2 (en) * 2004-04-15 2011-10-11 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
JP4225510B2 (ja) * 2005-07-06 2009-02-18 昭和電工株式会社 化合物半導体発光ダイオードおよびその製造方法
DE102005047168A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US8212262B2 (en) 2007-02-09 2012-07-03 Cree, Inc. Transparent LED chip
US8692286B2 (en) 2007-12-14 2014-04-08 Philips Lumileds Lighing Company LLC Light emitting device with bonded interface
US8592800B2 (en) * 2008-03-07 2013-11-26 Trustees Of Boston University Optical devices featuring nonpolar textured semiconductor layers
JP5315899B2 (ja) * 2008-09-30 2013-10-16 信越半導体株式会社 発光素子
JP5309971B2 (ja) * 2008-12-24 2013-10-09 信越半導体株式会社 発光素子
JP5608589B2 (ja) * 2011-03-10 2014-10-15 スタンレー電気株式会社 半導体発光素子および半導体発光素子の製造方法
KR101513803B1 (ko) * 2013-10-02 2015-04-20 광전자 주식회사 투명 기판 위에 직접 성장된 고 효율 AlGaInP 발광다이오드 및 그 제조방법
KR102098937B1 (ko) * 2014-01-27 2020-04-08 엘지이노텍 주식회사 발광소자
US10490691B2 (en) 2015-07-31 2019-11-26 Apple Inc. Light emitting diode with displaced P-type doping
WO2023038457A1 (en) * 2021-09-09 2023-03-16 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
CN114038960A (zh) * 2021-09-09 2022-02-11 重庆康佳光电技术研究院有限公司 微发光二极管磊晶结构及其制造方法、微发光二极管

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0072782A2 (en) * 1981-06-29 1983-02-23 Power System AB Method and apparatus for eliminating aerosol particles in display screen environments
JPH08125285A (ja) * 1994-09-01 1996-05-17 Mitsubishi Chem Corp 半導体発光装置
JPH08213652A (ja) * 1994-10-24 1996-08-20 Mitsubishi Chem Corp 半導体発光装置
EP0727827A2 (en) * 1995-02-15 1996-08-21 Mitsubishi Cable Industries, Ltd. Semiconductor light emitting element

Family Cites Families (18)

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US5060028A (en) 1989-01-19 1991-10-22 Hewlett-Packard Company High band-gap opto-electronic device
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP3290672B2 (ja) * 1990-08-20 2002-06-10 株式会社東芝 半導体発光ダイオード
US5008718A (en) 1989-12-18 1991-04-16 Fletcher Robert M Light-emitting diode with an electrically conductive window
JPH04306886A (ja) * 1991-04-03 1992-10-29 Mitsubishi Electric Corp 半導体発光素子
US5233204A (en) 1992-01-10 1993-08-03 Hewlett-Packard Company Light-emitting diode with a thick transparent layer
JP3373561B2 (ja) * 1992-09-30 2003-02-04 株式会社東芝 発光ダイオード
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
JP2778454B2 (ja) * 1994-03-07 1998-07-23 日本電気株式会社 半導体レーザ
US5639674A (en) * 1994-03-14 1997-06-17 Kabushiki Kaisha Toshiba Semiconductor light-emitting element and method for manufacturing therefor
US5811839A (en) * 1994-09-01 1998-09-22 Mitsubishi Chemical Corporation Semiconductor light-emitting devices
JPH08288544A (ja) * 1995-04-14 1996-11-01 Toshiba Corp 半導体発光素子
TW319916B (enExample) * 1995-06-05 1997-11-11 Hewlett Packard Co
DE19524655A1 (de) * 1995-07-06 1997-01-09 Huang Kuo Hsin LED-Struktur
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
JP3635757B2 (ja) * 1995-12-28 2005-04-06 昭和電工株式会社 ＡｌＧａＩｎＰ発光ダイオード
JP3643665B2 (ja) * 1996-12-20 2005-04-27 シャープ株式会社 半導体発光素子
US5917201A (en) * 1997-08-07 1999-06-29 Epistar Co. Light emitting diode with asymmetrical energy band structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0072782A2 (en) * 1981-06-29 1983-02-23 Power System AB Method and apparatus for eliminating aerosol particles in display screen environments
JPH08125285A (ja) * 1994-09-01 1996-05-17 Mitsubishi Chem Corp 半導体発光装置
JPH08213652A (ja) * 1994-10-24 1996-08-20 Mitsubishi Chem Corp 半導体発光装置
EP0727827A2 (en) * 1995-02-15 1996-08-21 Mitsubishi Cable Industries, Ltd. Semiconductor light emitting element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150051625A (ko) * 2013-11-05 2015-05-13 삼성디스플레이 주식회사 유기 발광 다이오드, 유기 발광 표시 장치의 화소, 및 유기 발광 표시 장치
KR102124416B1 (ko) * 2013-11-05 2020-06-19 삼성디스플레이 주식회사 유기 발광 다이오드, 유기 발광 표시 장치의 화소, 및 유기 발광 표시 장치

Also Published As

Publication number Publication date
DE19911701B4 (de) 2009-12-03
US7087941B2 (en) 2006-08-08
JP2000058906A (ja) 2000-02-25
GB2339965A (en) 2000-02-09
US20010020703A1 (en) 2001-09-13
DE19911701A1 (de) 2000-02-03
GB9917437D0 (en) 1999-09-22
TW410485B (en) 2000-11-01
KR20000011917A (ko) 2000-02-25
US20020127751A1 (en) 2002-09-12

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