JP2000058906A - 発光素子 - Google Patents

発光素子

Info

Publication number
JP2000058906A
JP2000058906A JP20990199A JP20990199A JP2000058906A JP 2000058906 A JP2000058906 A JP 2000058906A JP 20990199 A JP20990199 A JP 20990199A JP 20990199 A JP20990199 A JP 20990199A JP 2000058906 A JP2000058906 A JP 2000058906A
Authority
JP
Japan
Prior art keywords
layer
active layer
led
active
quantum efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20990199A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000058906A5 (enExample
Inventor
Nathan F Gardner
ナザン・エフ・ガードナー
Fred A Kish
フレッド・エー・キッシュ
Herman C Chui
ハーマン・シー・チュイ
Stephen A Stockman
スティーブン・エー・ストックマン
Michael R Krames
マイケル・アール・クレイムス
Gloria E Hofler
グロリア・イー・ホフラー
Christopher Kocot
クリストファー・ココット
Nicolas J Moll
ニコラス・ジェイ・モル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2000058906A publication Critical patent/JP2000058906A/ja
Publication of JP2000058906A5 publication Critical patent/JP2000058906A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants

Landscapes

  • Led Devices (AREA)
JP20990199A 1998-07-24 1999-07-23 発光素子 Pending JP2000058906A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/122,568 US20010020703A1 (en) 1998-07-24 1998-07-24 Algainp light emitting devices with thin active layers
US122,568 1998-07-24

Publications (2)

Publication Number Publication Date
JP2000058906A true JP2000058906A (ja) 2000-02-25
JP2000058906A5 JP2000058906A5 (enExample) 2006-11-02

Family

ID=22403472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20990199A Pending JP2000058906A (ja) 1998-07-24 1999-07-23 発光素子

Country Status (6)

Country Link
US (2) US20010020703A1 (enExample)
JP (1) JP2000058906A (enExample)
KR (1) KR100734638B1 (enExample)
DE (1) DE19911701B4 (enExample)
GB (1) GB2339965A (enExample)
TW (1) TW410485B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087270A (ja) * 2008-09-30 2010-04-15 Shin Etsu Handotai Co Ltd 発光素子
JP2010153496A (ja) * 2008-12-24 2010-07-08 Shin Etsu Handotai Co Ltd 発光素子
JP2012190985A (ja) * 2011-03-10 2012-10-04 Stanley Electric Co Ltd 半導体発光素子および半導体発光素子の製造方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6469314B1 (en) * 1999-12-21 2002-10-22 Lumileds Lighting U.S., Llc Thin multi-well active layer LED with controlled oxygen doping
JP2002151734A (ja) * 2000-09-04 2002-05-24 Sharp Corp 発光ダイオード
JP2002111052A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体発光素子及びその製造方法
US6891202B2 (en) 2001-12-14 2005-05-10 Infinera Corporation Oxygen-doped Al-containing current blocking layers in active semiconductor devices
US7528417B2 (en) 2003-02-10 2009-05-05 Showa Denko K.K. Light-emitting diode device and production method thereof
ATE527571T1 (de) * 2004-04-15 2011-10-15 Univ Boston Optische bauelemente mit texturierten halbleiterschichten
US8035113B2 (en) * 2004-04-15 2011-10-11 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
JP4225510B2 (ja) * 2005-07-06 2009-02-18 昭和電工株式会社 化合物半導体発光ダイオードおよびその製造方法
DE102005047168A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US8212262B2 (en) 2007-02-09 2012-07-03 Cree, Inc. Transparent LED chip
US8692286B2 (en) 2007-12-14 2014-04-08 Philips Lumileds Lighing Company LLC Light emitting device with bonded interface
US8592800B2 (en) * 2008-03-07 2013-11-26 Trustees Of Boston University Optical devices featuring nonpolar textured semiconductor layers
KR101513803B1 (ko) * 2013-10-02 2015-04-20 광전자 주식회사 투명 기판 위에 직접 성장된 고 효율 AlGaInP 발광다이오드 및 그 제조방법
KR102124416B1 (ko) * 2013-11-05 2020-06-19 삼성디스플레이 주식회사 유기 발광 다이오드, 유기 발광 표시 장치의 화소, 및 유기 발광 표시 장치
KR102098937B1 (ko) * 2014-01-27 2020-04-08 엘지이노텍 주식회사 발광소자
US10490691B2 (en) 2015-07-31 2019-11-26 Apple Inc. Light emitting diode with displaced P-type doping
WO2023038457A1 (en) * 2021-09-09 2023-03-16 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
CN114038960A (zh) * 2021-09-09 2022-02-11 重庆康佳光电技术研究院有限公司 微发光二极管磊晶结构及其制造方法、微发光二极管

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04212479A (ja) * 1990-08-20 1992-08-04 Toshiba Corp 半導体発光ダイオード
JPH04306886A (ja) * 1991-04-03 1992-10-29 Mitsubishi Electric Corp 半導体発光素子
JPH07245447A (ja) * 1994-03-07 1995-09-19 Nec Corp 半導体レーザ
JPH08330626A (ja) * 1995-06-05 1996-12-13 Hewlett Packard Co <Hp> 安定性の向上した少数キャリア半導体素子及びその向上方法
JPH09107123A (ja) * 1995-08-10 1997-04-22 Hewlett Packard Co <Hp> 発光ダイオード

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE423598B (sv) * 1981-06-29 1982-05-17 Power System Ab Forfarande och anordning for avskermning av aerosolpartiklar i bildskermsmiljoer
US5060028A (en) 1989-01-19 1991-10-22 Hewlett-Packard Company High band-gap opto-electronic device
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5008718A (en) 1989-12-18 1991-04-16 Fletcher Robert M Light-emitting diode with an electrically conductive window
US5233204A (en) 1992-01-10 1993-08-03 Hewlett-Packard Company Light-emitting diode with a thick transparent layer
JP3373561B2 (ja) * 1992-09-30 2003-02-04 株式会社東芝 発光ダイオード
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US5639674A (en) * 1994-03-14 1997-06-17 Kabushiki Kaisha Toshiba Semiconductor light-emitting element and method for manufacturing therefor
JPH08125285A (ja) * 1994-09-01 1996-05-17 Mitsubishi Chem Corp 半導体発光装置
US5811839A (en) * 1994-09-01 1998-09-22 Mitsubishi Chemical Corporation Semiconductor light-emitting devices
JP3622292B2 (ja) * 1994-10-24 2005-02-23 三菱化学株式会社 半導体発光装置
JP3124694B2 (ja) * 1995-02-15 2001-01-15 三菱電線工業株式会社 半導体発光素子
JPH08288544A (ja) * 1995-04-14 1996-11-01 Toshiba Corp 半導体発光素子
DE19524655A1 (de) * 1995-07-06 1997-01-09 Huang Kuo Hsin LED-Struktur
JP3635757B2 (ja) * 1995-12-28 2005-04-06 昭和電工株式会社 ＡｌＧａＩｎＰ発光ダイオード
JP3643665B2 (ja) * 1996-12-20 2005-04-27 シャープ株式会社 半導体発光素子
US5917201A (en) * 1997-08-07 1999-06-29 Epistar Co. Light emitting diode with asymmetrical energy band structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04212479A (ja) * 1990-08-20 1992-08-04 Toshiba Corp 半導体発光ダイオード
JPH04306886A (ja) * 1991-04-03 1992-10-29 Mitsubishi Electric Corp 半導体発光素子
JPH07245447A (ja) * 1994-03-07 1995-09-19 Nec Corp 半導体レーザ
JPH08330626A (ja) * 1995-06-05 1996-12-13 Hewlett Packard Co <Hp> 安定性の向上した少数キャリア半導体素子及びその向上方法
JPH09107123A (ja) * 1995-08-10 1997-04-22 Hewlett Packard Co <Hp> 発光ダイオード

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087270A (ja) * 2008-09-30 2010-04-15 Shin Etsu Handotai Co Ltd 発光素子
JP2010153496A (ja) * 2008-12-24 2010-07-08 Shin Etsu Handotai Co Ltd 発光素子
JP2012190985A (ja) * 2011-03-10 2012-10-04 Stanley Electric Co Ltd 半導体発光素子および半導体発光素子の製造方法

Also Published As

Publication number Publication date
DE19911701B4 (de) 2009-12-03
KR100734638B1 (ko) 2007-07-02
US7087941B2 (en) 2006-08-08
GB2339965A (en) 2000-02-09
US20010020703A1 (en) 2001-09-13
DE19911701A1 (de) 2000-02-03
GB9917437D0 (en) 1999-09-22
TW410485B (en) 2000-11-01
KR20000011917A (ko) 2000-02-25
US20020127751A1 (en) 2002-09-12

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