GB2339965A - AlGaInP light emitting devices - Google Patents
AlGaInP light emitting devices Download PDFInfo
- Publication number
- GB2339965A GB2339965A GB9917437A GB9917437A GB2339965A GB 2339965 A GB2339965 A GB 2339965A GB 9917437 A GB9917437 A GB 9917437A GB 9917437 A GB9917437 A GB 9917437A GB 2339965 A GB2339965 A GB 2339965A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- layers
- active
- light
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000002835 absorbance Methods 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 37
- 229910045601 alloy Inorganic materials 0.000 claims description 32
- 239000000956 alloy Substances 0.000 claims description 32
- 239000000203 mixture Substances 0.000 claims description 27
- 239000002019 doping agent Substances 0.000 claims description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 18
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 413
- 238000000605 extraction Methods 0.000 description 25
- 230000007423 decrease Effects 0.000 description 16
- 238000010521 absorption reaction Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 239000000969 carrier Substances 0.000 description 13
- 238000012545 processing Methods 0.000 description 9
- 230000006798 recombination Effects 0.000 description 7
- 238000005215 recombination Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000002035 prolonged effect Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- SYQQWGGBOQFINV-FBWHQHKGSA-N 4-[2-[(2s,8s,9s,10r,13r,14s,17r)-10,13-dimethyl-17-[(2r)-6-methylheptan-2-yl]-3-oxo-1,2,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-2-yl]ethoxy]-4-oxobutanoic acid Chemical compound C1CC2=CC(=O)[C@H](CCOC(=O)CCC(O)=O)C[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2 SYQQWGGBOQFINV-FBWHQHKGSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/122,568 US20010020703A1 (en) | 1998-07-24 | 1998-07-24 | Algainp light emitting devices with thin active layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9917437D0 GB9917437D0 (en) | 1999-09-22 |
| GB2339965A true GB2339965A (en) | 2000-02-09 |
Family
ID=22403472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9917437A Withdrawn GB2339965A (en) | 1998-07-24 | 1999-07-23 | AlGaInP light emitting devices |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20010020703A1 (enExample) |
| JP (1) | JP2000058906A (enExample) |
| KR (1) | KR100734638B1 (enExample) |
| DE (1) | DE19911701B4 (enExample) |
| GB (1) | GB2339965A (enExample) |
| TW (1) | TW410485B (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6469314B1 (en) * | 1999-12-21 | 2002-10-22 | Lumileds Lighting U.S., Llc | Thin multi-well active layer LED with controlled oxygen doping |
| JP2002151734A (ja) * | 2000-09-04 | 2002-05-24 | Sharp Corp | 発光ダイオード |
| JP2002111052A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体発光素子及びその製造方法 |
| US6891202B2 (en) | 2001-12-14 | 2005-05-10 | Infinera Corporation | Oxygen-doped Al-containing current blocking layers in active semiconductor devices |
| US7528417B2 (en) | 2003-02-10 | 2009-05-05 | Showa Denko K.K. | Light-emitting diode device and production method thereof |
| ATE527571T1 (de) * | 2004-04-15 | 2011-10-15 | Univ Boston | Optische bauelemente mit texturierten halbleiterschichten |
| US8035113B2 (en) * | 2004-04-15 | 2011-10-11 | The Trustees Of Boston University | Optical devices featuring textured semiconductor layers |
| JP4225510B2 (ja) * | 2005-07-06 | 2009-02-18 | 昭和電工株式会社 | 化合物半導体発光ダイオードおよびその製造方法 |
| DE102005047168A1 (de) * | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| US8212262B2 (en) | 2007-02-09 | 2012-07-03 | Cree, Inc. | Transparent LED chip |
| US8692286B2 (en) | 2007-12-14 | 2014-04-08 | Philips Lumileds Lighing Company LLC | Light emitting device with bonded interface |
| US8592800B2 (en) * | 2008-03-07 | 2013-11-26 | Trustees Of Boston University | Optical devices featuring nonpolar textured semiconductor layers |
| JP5315899B2 (ja) * | 2008-09-30 | 2013-10-16 | 信越半導体株式会社 | 発光素子 |
| JP5309971B2 (ja) * | 2008-12-24 | 2013-10-09 | 信越半導体株式会社 | 発光素子 |
| JP5608589B2 (ja) * | 2011-03-10 | 2014-10-15 | スタンレー電気株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| KR101513803B1 (ko) * | 2013-10-02 | 2015-04-20 | 광전자 주식회사 | 투명 기판 위에 직접 성장된 고 효율 AlGaInP 발광다이오드 및 그 제조방법 |
| KR102124416B1 (ko) * | 2013-11-05 | 2020-06-19 | 삼성디스플레이 주식회사 | 유기 발광 다이오드, 유기 발광 표시 장치의 화소, 및 유기 발광 표시 장치 |
| KR102098937B1 (ko) * | 2014-01-27 | 2020-04-08 | 엘지이노텍 주식회사 | 발광소자 |
| US10490691B2 (en) | 2015-07-31 | 2019-11-26 | Apple Inc. | Light emitting diode with displaced P-type doping |
| WO2023038457A1 (en) * | 2021-09-09 | 2023-03-16 | Seoul Viosys Co., Ltd. | Light emitting diode and method of fabricating the same |
| CN114038960A (zh) * | 2021-09-09 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | 微发光二极管磊晶结构及其制造方法、微发光二极管 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0727827A2 (en) * | 1995-02-15 | 1996-08-21 | Mitsubishi Cable Industries, Ltd. | Semiconductor light emitting element |
| US5639674A (en) * | 1994-03-14 | 1997-06-17 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting element and method for manufacturing therefor |
| US5661742A (en) * | 1995-07-06 | 1997-08-26 | Huang; Kuo-Hsin | Light emitting diode structure |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE423598B (sv) * | 1981-06-29 | 1982-05-17 | Power System Ab | Forfarande och anordning for avskermning av aerosolpartiklar i bildskermsmiljoer |
| US5060028A (en) | 1989-01-19 | 1991-10-22 | Hewlett-Packard Company | High band-gap opto-electronic device |
| US5153889A (en) * | 1989-05-31 | 1992-10-06 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
| JP3290672B2 (ja) * | 1990-08-20 | 2002-06-10 | 株式会社東芝 | 半導体発光ダイオード |
| US5008718A (en) | 1989-12-18 | 1991-04-16 | Fletcher Robert M | Light-emitting diode with an electrically conductive window |
| JPH04306886A (ja) * | 1991-04-03 | 1992-10-29 | Mitsubishi Electric Corp | 半導体発光素子 |
| US5233204A (en) | 1992-01-10 | 1993-08-03 | Hewlett-Packard Company | Light-emitting diode with a thick transparent layer |
| JP3373561B2 (ja) * | 1992-09-30 | 2003-02-04 | 株式会社東芝 | 発光ダイオード |
| US5376580A (en) | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
| JP2778454B2 (ja) * | 1994-03-07 | 1998-07-23 | 日本電気株式会社 | 半導体レーザ |
| JPH08125285A (ja) * | 1994-09-01 | 1996-05-17 | Mitsubishi Chem Corp | 半導体発光装置 |
| US5811839A (en) * | 1994-09-01 | 1998-09-22 | Mitsubishi Chemical Corporation | Semiconductor light-emitting devices |
| JP3622292B2 (ja) * | 1994-10-24 | 2005-02-23 | 三菱化学株式会社 | 半導体発光装置 |
| JPH08288544A (ja) * | 1995-04-14 | 1996-11-01 | Toshiba Corp | 半導体発光素子 |
| TW319916B (enExample) * | 1995-06-05 | 1997-11-11 | Hewlett Packard Co | |
| DE19629920B4 (de) * | 1995-08-10 | 2006-02-02 | LumiLeds Lighting, U.S., LLC, San Jose | Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor |
| JP3635757B2 (ja) * | 1995-12-28 | 2005-04-06 | 昭和電工株式会社 | ＡｌＧａＩｎＰ発光ダイオード |
| JP3643665B2 (ja) * | 1996-12-20 | 2005-04-27 | シャープ株式会社 | 半導体発光素子 |
| US5917201A (en) * | 1997-08-07 | 1999-06-29 | Epistar Co. | Light emitting diode with asymmetrical energy band structure |
-
1998
- 1998-07-24 US US09/122,568 patent/US20010020703A1/en not_active Abandoned
-
1999
- 1999-02-05 TW TW088101778A patent/TW410485B/zh not_active IP Right Cessation
- 1999-03-16 DE DE19911701A patent/DE19911701B4/de not_active Expired - Lifetime
- 1999-07-23 JP JP20990199A patent/JP2000058906A/ja active Pending
- 1999-07-23 KR KR1019990029926A patent/KR100734638B1/ko not_active Expired - Lifetime
- 1999-07-23 GB GB9917437A patent/GB2339965A/en not_active Withdrawn
-
2001
- 2001-11-05 US US10/011,521 patent/US7087941B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5639674A (en) * | 1994-03-14 | 1997-06-17 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting element and method for manufacturing therefor |
| EP0727827A2 (en) * | 1995-02-15 | 1996-08-21 | Mitsubishi Cable Industries, Ltd. | Semiconductor light emitting element |
| US5661742A (en) * | 1995-07-06 | 1997-08-26 | Huang; Kuo-Hsin | Light emitting diode structure |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19911701B4 (de) | 2009-12-03 |
| KR100734638B1 (ko) | 2007-07-02 |
| US7087941B2 (en) | 2006-08-08 |
| JP2000058906A (ja) | 2000-02-25 |
| US20010020703A1 (en) | 2001-09-13 |
| DE19911701A1 (de) | 2000-02-03 |
| GB9917437D0 (en) | 1999-09-22 |
| TW410485B (en) | 2000-11-01 |
| KR20000011917A (ko) | 2000-02-25 |
| US20020127751A1 (en) | 2002-09-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |