JP2006080525A - モノリシックのマルチカラーの多重量子井戸半導体発光ダイオード - Google Patents
モノリシックのマルチカラーの多重量子井戸半導体発光ダイオード Download PDFInfo
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- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
【解決手段】 本発明の発光ダイオード(LED)は、紫外から赤色までの領域の 間隔を開けた波長帯で発光する、各波長の光は マルチバンドギャップの、多重量子井戸(MQW)の活性発光領域で形成される。MQW活性発光領域は、n−1個の量子井戸を分けるn個の量子バリア含む、MQW層の積み重ねを含む。実施例は、MQW層の積み重ねが、たとえば、青または緑色領域および、少なくとも一つの他の領域において、2つの異なる波長の光を放射する少なくとも2つの異なるバンドギャップの量子井戸を含むものを含み、放射の強度は、予め選択された組み合わされた色、好ましくは白色の光の放射を行なうために調整されうる。
【選択図】 図1
Description
Claims (10)
- モノリシックの、マルチカラーの半導体発光ダイオード(LED)であって、
マルチバンドギャップの、多重量子井戸(MQW)活性発光領域は、少なくとも2つの間隔を開けた波長帯、すなわち、紫外線から赤色帯または領域の範囲で光を放射する、発光ダイオード。 - 前記マルチバンドギャップの多重量子井戸(MQW)活性発光領域は、n−1個の量子井戸の間隔を開ける、n個の量子バリアを含む、MQW層の積み重ねを含む、請求項1に記載の発光ダイオード。
- 前記MQW層の積み重ねは、少なくとも2個の異なるバンドギャップの量子井戸を含む、請求項2に記載の発光ダイオード。
- 前記少なくとも2個の間隔を開けた波長帯、または領域の各々での、発光強度は、発光される結果として得られる色を提供するために、調整され、かつ組み合わされる、請求項3に記載の発光ダイオード。
- 前記結果として得られる色は白色であり、
前記マルチバンドギャップの、MQW活性発光領域は、青または緑色領域、および少なくとも一つの他の領域の色を発光する量子井戸を含む、請求項4に記載の発光ダイオード。 - 前記量子井戸の各々は、少なくとも窒素(N)を含む窒素ベースのIII−V化合物半導体を含み、
前記デバイスは、基板の表面上に、エピタキシャルに形成された複数の、積層されたGaNベースの半導体層を含む、請求項5に記載の発光ダイオード。 - 前記複数の積層された層は、前記基板表面から順に、最も上のN型層、前記マルチバンドギャップ、MQW層の積み重ね、および少なくとも一つのP型層を含む、少なくとも一つの核生成/バッファ層を含み、
前記マルチバンドギャップのMQW層の積み重ねは、前記少なくとも一つの核生成/バッファ層から積み重なる順に、量子バリア、深い青色量子井戸、量子バリア、第1番目の緑色の量子井戸、量子バリア、第2番目の緑色の量子井戸、量子バリア、第3番目の緑色の量子井戸、量子バリア、第1番目の青色量子井戸、量子バリア、第2番目の青色量子井戸および量子バリアを含む、請求項6に記載の発光ダイオード。 - 前記量子バリアの各々は、約12nmの厚さでGaNからなり、前記深い青色の量子井戸は、約3nmの厚さで、InxGa1-xNからなり、ここで、xは約0.16であり、約428nmで放射ピークを有し、前記第1、第2および第3の緑色量子井戸の各々は、約3nmの厚さで、InxGa1-xNからなり、ここで、xは約0.32であり、約533nmで放射ピークを有し、前記第1および第2の青色量子井戸の各々は、約3nmの厚さであり、InxGa1-xNからなり、ここで、xは約0.19であり、約445nmで放射ピークを有する、請求項7に記載の発光ダイオード。
- 予め選択された色を発光する、モノリシックの、半導体発光ダイオード(LED)の製造方法であって、
前記方法は、少なくとも2つの間隔を開けた波長帯、または領域で発光する前記デバイスのマルチバンドギャップの、多重量子井戸(MQW)活性発光領域を基板上に形成するステップと、
前記少なくとも2つの間隔を開けた波長帯、または領域の各々で、波長領域が前記予め選択された色を提供するために組み合わされるように、発光強度を調節するステップを含み、
前記マルチバンドギャップのMQW活性発光領域は、n−1個の量子井戸の間隔を開ける、n個の量子バリアを含む、MQW層の積み重ねを含み、
前記MQW層の積み重ねは、紫外線から赤色までの範囲に亘る波長帯、または領域の光を発光する少なくとも2個の異なるバンドギャップの量子井戸を含む、発光ダイオードの製造方法。 - 前記予め選択された色は白色であり、
前記マルチバンドギャップのMQW活性発光領域は、青色、または緑色の領域および少なくとも一つの他の領域において発光するための量子井戸を含む、請求項9に記載の方法。
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JP2014503985A (ja) * | 2010-10-12 | 2014-02-13 | アライアンス フォー サステイナブル エナジー リミテッド ライアビリティ カンパニー | 高効率なオプトエレクトロニクスのための大きなバンドギャップをもつiii−v族化合物 |
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Also Published As
Publication number | Publication date |
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CN1790756A (zh) | 2006-06-21 |
TW200623462A (en) | 2006-07-01 |
US7323721B2 (en) | 2008-01-29 |
US20060049415A1 (en) | 2006-03-09 |
CN100403564C (zh) | 2008-07-16 |
TWI281274B (en) | 2007-05-11 |
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