JP2013021309A5 - - Google Patents

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Publication number
JP2013021309A5
JP2013021309A5 JP2012134023A JP2012134023A JP2013021309A5 JP 2013021309 A5 JP2013021309 A5 JP 2013021309A5 JP 2012134023 A JP2012134023 A JP 2012134023A JP 2012134023 A JP2012134023 A JP 2012134023A JP 2013021309 A5 JP2013021309 A5 JP 2013021309A5
Authority
JP
Japan
Prior art keywords
semiconductor layer
silicon semiconductor
single crystal
contact
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2012134023A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013021309A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2012134023A priority Critical patent/JP2013021309A/ja
Priority claimed from JP2012134023A external-priority patent/JP2013021309A/ja
Publication of JP2013021309A publication Critical patent/JP2013021309A/ja
Publication of JP2013021309A5 publication Critical patent/JP2013021309A5/ja
Withdrawn legal-status Critical Current

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JP2012134023A 2011-06-14 2012-06-13 光電変換装置 Withdrawn JP2013021309A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012134023A JP2013021309A (ja) 2011-06-14 2012-06-13 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011132101 2011-06-14
JP2011132101 2011-06-14
JP2012134023A JP2013021309A (ja) 2011-06-14 2012-06-13 光電変換装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016180242A Division JP2017005270A (ja) 2011-06-14 2016-09-15 光電変換装置の作製方法

Publications (2)

Publication Number Publication Date
JP2013021309A JP2013021309A (ja) 2013-01-31
JP2013021309A5 true JP2013021309A5 (enExample) 2015-07-09

Family

ID=47352991

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012134023A Withdrawn JP2013021309A (ja) 2011-06-14 2012-06-13 光電変換装置
JP2016180242A Withdrawn JP2017005270A (ja) 2011-06-14 2016-09-15 光電変換装置の作製方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016180242A Withdrawn JP2017005270A (ja) 2011-06-14 2016-09-15 光電変換装置の作製方法

Country Status (2)

Country Link
US (1) US20120319157A1 (enExample)
JP (2) JP2013021309A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107004732B (zh) * 2014-11-28 2020-10-20 松下知识产权经营株式会社 太阳能单电池和太阳能电池组件
IT201700004876A1 (it) * 2017-01-18 2018-07-18 Enel Green Power Spa Apparato a cella solare e relativo metodo di produzione per celle singole, tandem e sistemi a eterogiunzione
AU2020329758A1 (en) 2019-08-09 2022-02-17 Leading Edge Equipment Technologies, Inc. Wafer with regions of low oxygen concentration
JP2022543358A (ja) 2019-08-09 2022-10-12 リーディング エッジ イクウィップメント テクノロジーズ インコーポレイテッド 酸素濃度の低い領域を有するリボンまたはウェハの製造

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3203078B2 (ja) * 1992-12-09 2001-08-27 三洋電機株式会社 光起電力素子
US6875674B2 (en) * 2000-07-10 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with fluorine concentration
JP2002057351A (ja) * 2000-08-15 2002-02-22 Shin Etsu Handotai Co Ltd 太陽電池セルの製造方法および太陽電池セル
US6743700B2 (en) * 2001-06-01 2004-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device and method of their production
JP5526461B2 (ja) * 2007-03-19 2014-06-18 三洋電機株式会社 光起電力装置
US7875486B2 (en) * 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
KR101234881B1 (ko) * 2007-12-20 2013-02-20 시마 나노 테크 이스라엘 리미티드 나노입자로 형성된 투명한 전극을 갖는 광전지 소자
JP5374250B2 (ja) * 2009-06-19 2013-12-25 株式会社カネカ 結晶シリコン太陽電池
KR101146736B1 (ko) * 2009-09-14 2012-05-17 엘지전자 주식회사 태양 전지
WO2011062286A1 (ja) * 2009-11-20 2011-05-26 京セラ株式会社 堆積膜形成装置

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