JP2013021309A - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP2013021309A
JP2013021309A JP2012134023A JP2012134023A JP2013021309A JP 2013021309 A JP2013021309 A JP 2013021309A JP 2012134023 A JP2012134023 A JP 2012134023A JP 2012134023 A JP2012134023 A JP 2012134023A JP 2013021309 A JP2013021309 A JP 2013021309A
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Japan
Prior art keywords
semiconductor layer
silicon semiconductor
single crystal
silicon substrate
crystal silicon
Prior art date
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Application number
JP2012134023A
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English (en)
Japanese (ja)
Other versions
JP2013021309A5 (enExample
Inventor
Mitsuhiro Ichijo
充弘 一條
Toshiya Endo
俊弥 遠藤
Sho Kato
翔 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2012134023A priority Critical patent/JP2013021309A/ja
Publication of JP2013021309A publication Critical patent/JP2013021309A/ja
Publication of JP2013021309A5 publication Critical patent/JP2013021309A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
JP2012134023A 2011-06-14 2012-06-13 光電変換装置 Withdrawn JP2013021309A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012134023A JP2013021309A (ja) 2011-06-14 2012-06-13 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011132101 2011-06-14
JP2011132101 2011-06-14
JP2012134023A JP2013021309A (ja) 2011-06-14 2012-06-13 光電変換装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016180242A Division JP2017005270A (ja) 2011-06-14 2016-09-15 光電変換装置の作製方法

Publications (2)

Publication Number Publication Date
JP2013021309A true JP2013021309A (ja) 2013-01-31
JP2013021309A5 JP2013021309A5 (enExample) 2015-07-09

Family

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Family Applications (2)

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JP2012134023A Withdrawn JP2013021309A (ja) 2011-06-14 2012-06-13 光電変換装置
JP2016180242A Withdrawn JP2017005270A (ja) 2011-06-14 2016-09-15 光電変換装置の作製方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016180242A Withdrawn JP2017005270A (ja) 2011-06-14 2016-09-15 光電変換装置の作製方法

Country Status (2)

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US (1) US20120319157A1 (enExample)
JP (2) JP2013021309A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107004732B (zh) * 2014-11-28 2020-10-20 松下知识产权经营株式会社 太阳能单电池和太阳能电池组件
IT201700004876A1 (it) * 2017-01-18 2018-07-18 Enel Green Power Spa Apparato a cella solare e relativo metodo di produzione per celle singole, tandem e sistemi a eterogiunzione
AU2020328504A1 (en) 2019-08-09 2022-02-17 Leading Edge Equipment Technologies, Inc. Producing a ribbon or wafer with regions of low oxygen concentration
EP4010924A4 (en) 2019-08-09 2023-09-13 Leading Edge Equipment Technologies, Inc. WAFER WITH AREAS OF LOW OXYGEN CONCENTRATION

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235400A (ja) * 2007-03-19 2008-10-02 Sanyo Electric Co Ltd 光起電力装置
WO2010005439A1 (en) * 2008-07-09 2010-01-14 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same
WO2011062286A1 (ja) * 2009-11-20 2011-05-26 京セラ株式会社 堆積膜形成装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3203078B2 (ja) * 1992-12-09 2001-08-27 三洋電機株式会社 光起電力素子
US6875674B2 (en) * 2000-07-10 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with fluorine concentration
JP2002057351A (ja) * 2000-08-15 2002-02-22 Shin Etsu Handotai Co Ltd 太陽電池セルの製造方法および太陽電池セル
US6743700B2 (en) * 2001-06-01 2004-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device and method of their production
KR101586506B1 (ko) * 2007-12-20 2016-01-18 시마 나노 테크 이스라엘 리미티드 충전제 재료를 포함하는 투명한 전도성 코팅
JP5374250B2 (ja) * 2009-06-19 2013-12-25 株式会社カネカ 結晶シリコン太陽電池
KR101146736B1 (ko) * 2009-09-14 2012-05-17 엘지전자 주식회사 태양 전지

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235400A (ja) * 2007-03-19 2008-10-02 Sanyo Electric Co Ltd 光起電力装置
WO2010005439A1 (en) * 2008-07-09 2010-01-14 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same
WO2011062286A1 (ja) * 2009-11-20 2011-05-26 京セラ株式会社 堆積膜形成装置

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Publication number Publication date
US20120319157A1 (en) 2012-12-20
JP2017005270A (ja) 2017-01-05

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