JP2009088425A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009088425A5 JP2009088425A5 JP2007259429A JP2007259429A JP2009088425A5 JP 2009088425 A5 JP2009088425 A5 JP 2009088425A5 JP 2007259429 A JP2007259429 A JP 2007259429A JP 2007259429 A JP2007259429 A JP 2007259429A JP 2009088425 A5 JP2009088425 A5 JP 2009088425A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser according
- current confinement
- convex portion
- confinement structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 29
- 239000000758 substrate Substances 0.000 claims 5
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007259429A JP2009088425A (ja) | 2007-10-03 | 2007-10-03 | 半導体レーザおよびその製造方法 |
| US12/237,547 US7965749B2 (en) | 2007-10-03 | 2008-09-25 | Laser diode and method of manufacturing the same |
| KR1020080095119A KR20090034738A (ko) | 2007-10-03 | 2008-09-29 | 반도체 레이저 및 그 제조방법 |
| US13/085,150 US8520712B2 (en) | 2007-10-03 | 2011-04-12 | Laser diode and method of manufacturing the same |
| US13/099,503 US8179941B2 (en) | 2007-10-03 | 2011-05-03 | Laser diode and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007259429A JP2009088425A (ja) | 2007-10-03 | 2007-10-03 | 半導体レーザおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009088425A JP2009088425A (ja) | 2009-04-23 |
| JP2009088425A5 true JP2009088425A5 (enExample) | 2010-05-13 |
Family
ID=40523201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007259429A Pending JP2009088425A (ja) | 2007-10-03 | 2007-10-03 | 半導体レーザおよびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US7965749B2 (enExample) |
| JP (1) | JP2009088425A (enExample) |
| KR (1) | KR20090034738A (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007061458A1 (de) * | 2007-11-30 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement |
| DE102009035639B4 (de) | 2009-07-31 | 2019-10-24 | Osram Opto Semiconductors Gmbh | Breitstreifenlaser mit einem epitaktischen Schichtenstapel und Verfahren zu dessen Herstellung |
| EP2387081B1 (en) * | 2010-05-11 | 2015-09-30 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device and method for fabricating the same |
| KR101243475B1 (ko) | 2011-03-30 | 2013-03-13 | 로베르트 보쉬 게엠베하 | 단락 부재를 구비한 이차 전지 |
| JP2012231000A (ja) * | 2011-04-26 | 2012-11-22 | Toshiba Corp | 半導体発光装置 |
| JP2014165328A (ja) * | 2013-02-25 | 2014-09-08 | Sony Corp | 半導体発光素子及び表示装置 |
| JP2015012018A (ja) * | 2013-06-26 | 2015-01-19 | シャープ株式会社 | 半導体レーザ素子 |
| JP6123561B2 (ja) * | 2013-08-08 | 2017-05-10 | ソニー株式会社 | 発光素子及びその製造方法、並びに、表示装置 |
| CN103872579B (zh) * | 2014-03-28 | 2016-08-24 | 江苏华芯半导体科技有限公司 | 改变半导体激光器件芯片慢轴方向光场分布的方法 |
| EP3258555B1 (en) * | 2015-02-12 | 2022-03-30 | Furukawa Electric Co. Ltd. | Semiconductor laser element and laser light irradiation device |
| DE102016110790B4 (de) * | 2016-06-13 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode |
| DE102017113389B4 (de) | 2017-06-19 | 2021-07-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode |
| WO2019053854A1 (ja) * | 2017-09-14 | 2019-03-21 | 三菱電機株式会社 | 半導体レーザ装置 |
| DE102018123019A1 (de) * | 2018-09-19 | 2020-03-19 | Osram Opto Semiconductors Gmbh | Gewinngeführter halbleiterlaser und herstellungsverfahren hierfür |
| DE112020003385B4 (de) * | 2019-08-13 | 2025-08-14 | Nlight, Inc. | Verfahren, System und Vorrichtung zur Unterdrückung von Moden höherer Ordnung |
| WO2022190275A1 (ja) * | 2021-03-10 | 2022-09-15 | 三菱電機株式会社 | 半導体レーザ装置 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513991A (en) * | 1978-07-18 | 1980-01-31 | Nec Corp | Method of manufacturing semiconductor laser |
| JPS62147794A (ja) * | 1985-12-20 | 1987-07-01 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
| JPS62257783A (ja) * | 1986-04-30 | 1987-11-10 | Sharp Corp | 半導体レ−ザ素子 |
| JPS62282483A (ja) * | 1986-05-30 | 1987-12-08 | Sharp Corp | 半導体レ−ザアレイ装置 |
| JPS6384086A (ja) * | 1986-09-26 | 1988-04-14 | Nec Corp | 半導体レ−ザアレイ素子 |
| JPS6381996A (ja) * | 1986-09-26 | 1988-04-12 | Oki Electric Ind Co Ltd | 半導体レ−ザ素子 |
| JPS6422088A (en) * | 1987-07-17 | 1989-01-25 | Nec Corp | Manufacture of semiconductor laser element |
| JPS6425591A (en) * | 1987-07-22 | 1989-01-27 | Matsushita Electric Industrial Co Ltd | Semiconductor laser |
| JP2929599B2 (ja) * | 1989-01-20 | 1999-08-03 | 富士通株式会社 | 半導体発光装置 |
| JP2546127B2 (ja) * | 1993-04-06 | 1996-10-23 | 日本電気株式会社 | 半導体レーザ |
| US5465266A (en) * | 1994-06-28 | 1995-11-07 | Xerox Corporation | Index-guided laser on a ridged (001) substrate |
| JP3791584B2 (ja) * | 1999-12-28 | 2006-06-28 | セイコーエプソン株式会社 | 面発光型半導体レーザおよび面発光型半導体レーザアレイ |
| JP2003031906A (ja) * | 2001-07-16 | 2003-01-31 | Sony Corp | 半導体レーザ |
| JP2003060288A (ja) | 2001-08-16 | 2003-02-28 | Sony Corp | 半導体レーザ |
| JP4395702B2 (ja) | 2003-01-16 | 2010-01-13 | ソニー株式会社 | 屈折率導波型ブロードエリア半導体レーザおよびその駆動方法 |
| JP4378955B2 (ja) | 2003-01-16 | 2009-12-09 | ソニー株式会社 | ブロードエリア型半導体レーザおよびその製造方法 |
| JP4292833B2 (ja) | 2003-03-11 | 2009-07-08 | ソニー株式会社 | 半導体発光素子 |
| JP2005116728A (ja) | 2003-10-07 | 2005-04-28 | Sony Corp | 半導体レーザ |
| JP2006269988A (ja) | 2005-03-25 | 2006-10-05 | Sony Corp | 半導体レーザ |
| KR101423721B1 (ko) * | 2007-10-09 | 2014-07-31 | 서울바이오시스 주식회사 | 나노 패턴들을 갖는 레이저 다이오드 및 그것을 제조하는방법 |
-
2007
- 2007-10-03 JP JP2007259429A patent/JP2009088425A/ja active Pending
-
2008
- 2008-09-25 US US12/237,547 patent/US7965749B2/en active Active
- 2008-09-29 KR KR1020080095119A patent/KR20090034738A/ko not_active Ceased
-
2011
- 2011-04-12 US US13/085,150 patent/US8520712B2/en not_active Expired - Fee Related
- 2011-05-03 US US13/099,503 patent/US8179941B2/en not_active Expired - Fee Related