JP2009088425A - 半導体レーザおよびその製造方法 - Google Patents

半導体レーザおよびその製造方法 Download PDF

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Publication number
JP2009088425A
JP2009088425A JP2007259429A JP2007259429A JP2009088425A JP 2009088425 A JP2009088425 A JP 2009088425A JP 2007259429 A JP2007259429 A JP 2007259429A JP 2007259429 A JP2007259429 A JP 2007259429A JP 2009088425 A JP2009088425 A JP 2009088425A
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Japan
Prior art keywords
semiconductor laser
laser according
current confinement
confinement structure
width
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Pending
Application number
JP2007259429A
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English (en)
Japanese (ja)
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JP2009088425A5 (enExample
Inventor
Shoji Hirata
照二 平田
Yasunori Asazuma
庸紀 朝妻
Yoshiro Takiguchi
由朗 滝口
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Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2007259429A priority Critical patent/JP2009088425A/ja
Priority to US12/237,547 priority patent/US7965749B2/en
Priority to KR1020080095119A priority patent/KR20090034738A/ko
Publication of JP2009088425A publication Critical patent/JP2009088425A/ja
Publication of JP2009088425A5 publication Critical patent/JP2009088425A5/ja
Priority to US13/085,150 priority patent/US8520712B2/en
Priority to US13/099,503 priority patent/US8179941B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/20—Lasers with a special output beam profile or cross-section, e.g. non-Gaussian
    • H01S2301/206—Top hat profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
JP2007259429A 2007-10-03 2007-10-03 半導体レーザおよびその製造方法 Pending JP2009088425A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007259429A JP2009088425A (ja) 2007-10-03 2007-10-03 半導体レーザおよびその製造方法
US12/237,547 US7965749B2 (en) 2007-10-03 2008-09-25 Laser diode and method of manufacturing the same
KR1020080095119A KR20090034738A (ko) 2007-10-03 2008-09-29 반도체 레이저 및 그 제조방법
US13/085,150 US8520712B2 (en) 2007-10-03 2011-04-12 Laser diode and method of manufacturing the same
US13/099,503 US8179941B2 (en) 2007-10-03 2011-05-03 Laser diode and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007259429A JP2009088425A (ja) 2007-10-03 2007-10-03 半導体レーザおよびその製造方法

Publications (2)

Publication Number Publication Date
JP2009088425A true JP2009088425A (ja) 2009-04-23
JP2009088425A5 JP2009088425A5 (enExample) 2010-05-13

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Country Status (3)

Country Link
US (3) US7965749B2 (enExample)
JP (1) JP2009088425A (enExample)
KR (1) KR20090034738A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101878567A (zh) * 2007-11-30 2010-11-03 奥斯兰姆奥普托半导体有限责任公司 用于制造发射辐射的器件的方法以及发射辐射的器件
JP2015012018A (ja) * 2013-06-26 2015-01-19 シャープ株式会社 半導体レーザ素子
CN104348085A (zh) * 2013-08-08 2015-02-11 索尼公司 发光元件、其制造方法和显示设备
JPWO2016129618A1 (ja) * 2015-02-12 2017-11-24 古河電気工業株式会社 半導体レーザ素子およびレーザ光照射装置
JP2022501815A (ja) * 2018-09-19 2022-01-06 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングOSRAM OLED GmbH 利得導波型半導体レーザおよびその製造方法
JPWO2022190275A1 (enExample) * 2021-03-10 2022-09-15

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009035639B4 (de) * 2009-07-31 2019-10-24 Osram Opto Semiconductors Gmbh Breitstreifenlaser mit einem epitaktischen Schichtenstapel und Verfahren zu dessen Herstellung
EP2387081B1 (en) * 2010-05-11 2015-09-30 Samsung Electronics Co., Ltd. Semiconductor light emitting device and method for fabricating the same
KR101243475B1 (ko) 2011-03-30 2013-03-13 로베르트 보쉬 게엠베하 단락 부재를 구비한 이차 전지
JP2012231000A (ja) * 2011-04-26 2012-11-22 Toshiba Corp 半導体発光装置
JP2014165328A (ja) * 2013-02-25 2014-09-08 Sony Corp 半導体発光素子及び表示装置
CN103872579B (zh) * 2014-03-28 2016-08-24 江苏华芯半导体科技有限公司 改变半导体激光器件芯片慢轴方向光场分布的方法
DE102016110790B4 (de) * 2016-06-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
DE102017113389B4 (de) 2017-06-19 2021-07-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
WO2019053854A1 (ja) * 2017-09-14 2019-03-21 三菱電機株式会社 半導体レーザ装置
CN114424417A (zh) * 2019-08-13 2022-04-29 恩耐公司 用于高阶模抑制的方法、系统和装置

Citations (7)

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JPS5513991A (en) * 1978-07-18 1980-01-31 Nec Corp Method of manufacturing semiconductor laser
JPS6381996A (ja) * 1986-09-26 1988-04-12 Oki Electric Ind Co Ltd 半導体レ−ザ素子
JPS6384086A (ja) * 1986-09-26 1988-04-14 Nec Corp 半導体レ−ザアレイ素子
JPS6422088A (en) * 1987-07-17 1989-01-25 Nec Corp Manufacture of semiconductor laser element
JPS6425591A (en) * 1987-07-22 1989-01-27 Matsushita Electric Industrial Co Ltd Semiconductor laser
JPH02192786A (ja) * 1989-01-20 1990-07-30 Fujitsu Ltd 半導体発光装置
JP2003031906A (ja) * 2001-07-16 2003-01-31 Sony Corp 半導体レーザ

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JPS62147794A (ja) * 1985-12-20 1987-07-01 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS62257783A (ja) * 1986-04-30 1987-11-10 Sharp Corp 半導体レ−ザ素子
JPS62282483A (ja) * 1986-05-30 1987-12-08 Sharp Corp 半導体レ−ザアレイ装置
JP2546127B2 (ja) * 1993-04-06 1996-10-23 日本電気株式会社 半導体レーザ
US5465266A (en) * 1994-06-28 1995-11-07 Xerox Corporation Index-guided laser on a ridged (001) substrate
JP3791584B2 (ja) * 1999-12-28 2006-06-28 セイコーエプソン株式会社 面発光型半導体レーザおよび面発光型半導体レーザアレイ
JP2003060288A (ja) 2001-08-16 2003-02-28 Sony Corp 半導体レーザ
JP4395702B2 (ja) 2003-01-16 2010-01-13 ソニー株式会社 屈折率導波型ブロードエリア半導体レーザおよびその駆動方法
JP4378955B2 (ja) 2003-01-16 2009-12-09 ソニー株式会社 ブロードエリア型半導体レーザおよびその製造方法
JP4292833B2 (ja) 2003-03-11 2009-07-08 ソニー株式会社 半導体発光素子
JP2005116728A (ja) 2003-10-07 2005-04-28 Sony Corp 半導体レーザ
JP2006269988A (ja) 2005-03-25 2006-10-05 Sony Corp 半導体レーザ
KR101423721B1 (ko) * 2007-10-09 2014-07-31 서울바이오시스 주식회사 나노 패턴들을 갖는 레이저 다이오드 및 그것을 제조하는방법

Patent Citations (7)

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Publication number Priority date Publication date Assignee Title
JPS5513991A (en) * 1978-07-18 1980-01-31 Nec Corp Method of manufacturing semiconductor laser
JPS6381996A (ja) * 1986-09-26 1988-04-12 Oki Electric Ind Co Ltd 半導体レ−ザ素子
JPS6384086A (ja) * 1986-09-26 1988-04-14 Nec Corp 半導体レ−ザアレイ素子
JPS6422088A (en) * 1987-07-17 1989-01-25 Nec Corp Manufacture of semiconductor laser element
JPS6425591A (en) * 1987-07-22 1989-01-27 Matsushita Electric Industrial Co Ltd Semiconductor laser
JPH02192786A (ja) * 1989-01-20 1990-07-30 Fujitsu Ltd 半導体発光装置
JP2003031906A (ja) * 2001-07-16 2003-01-31 Sony Corp 半導体レーザ

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101878567A (zh) * 2007-11-30 2010-11-03 奥斯兰姆奥普托半导体有限责任公司 用于制造发射辐射的器件的方法以及发射辐射的器件
JP2011505069A (ja) * 2007-11-30 2011-02-17 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光素子の製造方法および発光素子
US9018641B2 (en) 2007-11-30 2015-04-28 CSRAM Opto Semiconductors GmbH Method for producing a radiation-emitting component and radiation-emitting component
JP2015012018A (ja) * 2013-06-26 2015-01-19 シャープ株式会社 半導体レーザ素子
CN104348085A (zh) * 2013-08-08 2015-02-11 索尼公司 发光元件、其制造方法和显示设备
JPWO2016129618A1 (ja) * 2015-02-12 2017-11-24 古河電気工業株式会社 半導体レーザ素子およびレーザ光照射装置
JP2022501815A (ja) * 2018-09-19 2022-01-06 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングOSRAM OLED GmbH 利得導波型半導体レーザおよびその製造方法
JP7297875B2 (ja) 2018-09-19 2023-06-26 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツング 利得導波型半導体レーザおよびその製造方法
US11984704B2 (en) 2018-09-19 2024-05-14 Osram Oled Gmbh Gain-guided semiconductor laser and method of manufacturing the same
JPWO2022190275A1 (enExample) * 2021-03-10 2022-09-15
WO2022190275A1 (ja) * 2021-03-10 2022-09-15 三菱電機株式会社 半導体レーザ装置
JP7511743B2 (ja) 2021-03-10 2024-07-05 三菱電機株式会社 半導体レーザ装置

Also Published As

Publication number Publication date
US8179941B2 (en) 2012-05-15
US8520712B2 (en) 2013-08-27
US20110206080A1 (en) 2011-08-25
US20110182313A1 (en) 2011-07-28
US20090092163A1 (en) 2009-04-09
KR20090034738A (ko) 2009-04-08
US7965749B2 (en) 2011-06-21

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