KR20090034738A - 반도체 레이저 및 그 제조방법 - Google Patents

반도체 레이저 및 그 제조방법 Download PDF

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Publication number
KR20090034738A
KR20090034738A KR1020080095119A KR20080095119A KR20090034738A KR 20090034738 A KR20090034738 A KR 20090034738A KR 1020080095119 A KR1020080095119 A KR 1020080095119A KR 20080095119 A KR20080095119 A KR 20080095119A KR 20090034738 A KR20090034738 A KR 20090034738A
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KR
South Korea
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current
width
region
semiconductor laser
layer
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KR1020080095119A
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English (en)
Korean (ko)
Inventor
쇼지 히라타
츠네노리 아사츠마
요시로 타키구치
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소니 가부시끼 가이샤
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Publication of KR20090034738A publication Critical patent/KR20090034738A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/20—Lasers with a special output beam profile or cross-section, e.g. non-Gaussian
    • H01S2301/206—Top hat profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
KR1020080095119A 2007-10-03 2008-09-29 반도체 레이저 및 그 제조방법 Ceased KR20090034738A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00259429 2007-10-03
JP2007259429A JP2009088425A (ja) 2007-10-03 2007-10-03 半導体レーザおよびその製造方法

Publications (1)

Publication Number Publication Date
KR20090034738A true KR20090034738A (ko) 2009-04-08

Family

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Family Applications (1)

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KR1020080095119A Ceased KR20090034738A (ko) 2007-10-03 2008-09-29 반도체 레이저 및 그 제조방법

Country Status (3)

Country Link
US (3) US7965749B2 (enExample)
JP (1) JP2009088425A (enExample)
KR (1) KR20090034738A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9123927B2 (en) 2011-03-30 2015-09-01 Samsung Sdi Co., Ltd. Secondary battery

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DE102007061458A1 (de) * 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement
DE102009035639B4 (de) * 2009-07-31 2019-10-24 Osram Opto Semiconductors Gmbh Breitstreifenlaser mit einem epitaktischen Schichtenstapel und Verfahren zu dessen Herstellung
EP2387081B1 (en) * 2010-05-11 2015-09-30 Samsung Electronics Co., Ltd. Semiconductor light emitting device and method for fabricating the same
JP2012231000A (ja) * 2011-04-26 2012-11-22 Toshiba Corp 半導体発光装置
JP2014165328A (ja) * 2013-02-25 2014-09-08 Sony Corp 半導体発光素子及び表示装置
JP2015012018A (ja) * 2013-06-26 2015-01-19 シャープ株式会社 半導体レーザ素子
JP6123561B2 (ja) * 2013-08-08 2017-05-10 ソニー株式会社 発光素子及びその製造方法、並びに、表示装置
CN103872579B (zh) * 2014-03-28 2016-08-24 江苏华芯半导体科技有限公司 改变半导体激光器件芯片慢轴方向光场分布的方法
JP6943570B2 (ja) * 2015-02-12 2021-10-06 古河電気工業株式会社 半導体レーザ素子およびレーザ光照射装置
DE102016110790B4 (de) * 2016-06-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
DE102017113389B4 (de) 2017-06-19 2021-07-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
WO2019053854A1 (ja) * 2017-09-14 2019-03-21 三菱電機株式会社 半導体レーザ装置
DE102018123019A1 (de) 2018-09-19 2020-03-19 Osram Opto Semiconductors Gmbh Gewinngeführter halbleiterlaser und herstellungsverfahren hierfür
CN114424417A (zh) * 2019-08-13 2022-04-29 恩耐公司 用于高阶模抑制的方法、系统和装置
JP7511743B2 (ja) * 2021-03-10 2024-07-05 三菱電機株式会社 半導体レーザ装置

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JPS62257783A (ja) * 1986-04-30 1987-11-10 Sharp Corp 半導体レ−ザ素子
JPS62282483A (ja) * 1986-05-30 1987-12-08 Sharp Corp 半導体レ−ザアレイ装置
JPS6384086A (ja) * 1986-09-26 1988-04-14 Nec Corp 半導体レ−ザアレイ素子
JPS6381996A (ja) * 1986-09-26 1988-04-12 Oki Electric Ind Co Ltd 半導体レ−ザ素子
JPS6422088A (en) * 1987-07-17 1989-01-25 Nec Corp Manufacture of semiconductor laser element
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JP2929599B2 (ja) * 1989-01-20 1999-08-03 富士通株式会社 半導体発光装置
JP2546127B2 (ja) * 1993-04-06 1996-10-23 日本電気株式会社 半導体レーザ
US5465266A (en) * 1994-06-28 1995-11-07 Xerox Corporation Index-guided laser on a ridged (001) substrate
JP3791584B2 (ja) * 1999-12-28 2006-06-28 セイコーエプソン株式会社 面発光型半導体レーザおよび面発光型半導体レーザアレイ
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9123927B2 (en) 2011-03-30 2015-09-01 Samsung Sdi Co., Ltd. Secondary battery

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Publication number Publication date
US8179941B2 (en) 2012-05-15
US8520712B2 (en) 2013-08-27
US20110206080A1 (en) 2011-08-25
US20110182313A1 (en) 2011-07-28
US20090092163A1 (en) 2009-04-09
US7965749B2 (en) 2011-06-21
JP2009088425A (ja) 2009-04-23

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