JPS6422088A - Manufacture of semiconductor laser element - Google Patents
Manufacture of semiconductor laser elementInfo
- Publication number
- JPS6422088A JPS6422088A JP17820587A JP17820587A JPS6422088A JP S6422088 A JPS6422088 A JP S6422088A JP 17820587 A JP17820587 A JP 17820587A JP 17820587 A JP17820587 A JP 17820587A JP S6422088 A JPS6422088 A JP S6422088A
- Authority
- JP
- Japan
- Prior art keywords
- gallium arsenide
- layer
- whose
- type
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To enable the manufacture of a semiconductor laser wherein the astigmatism is small and the high output operation is possible, by providing a transversally effective real refractive index waveguide whose protruding form gently changes, and arranging a light reflecting layer of high aluminum composition in the manner in which said layer is adjacent to an active layer. CONSTITUTION:After a trench is formed by etching on an N-type gallium arsenide substrate 1, an N-type aluminum gallium arsenide clad layer 2 whose aluminum composition is 0.4 is firstly grown. Next, an optical waveguide layer 3 of N-type aluminum gallium arsenide whose aluminum composition is 0.35 is grown so as to completely fill a recessed part. An anti-oxidizing layer 10 of gallium arsenide previously grown in a reaction furnace for organic metal vapor growth, is completely eliminated by vapor phase etching. Then the following are grown in order; an active layer 4 of aluminum gallium arsenide whose aluminum composition is 0.15, a light reflecting layer 5 of P-type aluminum gallium arsenide whose aluminum composition is 0.6, a clad layer 6 of P-type aluminum gallium arsenide whose aluminum composition is 0.35, and a cap layer 7 of N-type gallium arsenide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17820587A JPS6422088A (en) | 1987-07-17 | 1987-07-17 | Manufacture of semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17820587A JPS6422088A (en) | 1987-07-17 | 1987-07-17 | Manufacture of semiconductor laser element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6422088A true JPS6422088A (en) | 1989-01-25 |
Family
ID=16044413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17820587A Pending JPS6422088A (en) | 1987-07-17 | 1987-07-17 | Manufacture of semiconductor laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6422088A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009088425A (en) * | 2007-10-03 | 2009-04-23 | Sony Corp | Semiconductor laser, and manufacturing method therefor |
-
1987
- 1987-07-17 JP JP17820587A patent/JPS6422088A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009088425A (en) * | 2007-10-03 | 2009-04-23 | Sony Corp | Semiconductor laser, and manufacturing method therefor |
US8179941B2 (en) | 2007-10-03 | 2012-05-15 | Sony Corporation | Laser diode and method of manufacturing the same |
US8520712B2 (en) | 2007-10-03 | 2013-08-27 | Sony Corporation | Laser diode and method of manufacturing the same |
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