JPS6422088A - Manufacture of semiconductor laser element - Google Patents

Manufacture of semiconductor laser element

Info

Publication number
JPS6422088A
JPS6422088A JP17820587A JP17820587A JPS6422088A JP S6422088 A JPS6422088 A JP S6422088A JP 17820587 A JP17820587 A JP 17820587A JP 17820587 A JP17820587 A JP 17820587A JP S6422088 A JPS6422088 A JP S6422088A
Authority
JP
Japan
Prior art keywords
gallium arsenide
layer
whose
type
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17820587A
Other languages
Japanese (ja)
Inventor
Masaki Tsunekane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17820587A priority Critical patent/JPS6422088A/en
Publication of JPS6422088A publication Critical patent/JPS6422088A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable the manufacture of a semiconductor laser wherein the astigmatism is small and the high output operation is possible, by providing a transversally effective real refractive index waveguide whose protruding form gently changes, and arranging a light reflecting layer of high aluminum composition in the manner in which said layer is adjacent to an active layer. CONSTITUTION:After a trench is formed by etching on an N-type gallium arsenide substrate 1, an N-type aluminum gallium arsenide clad layer 2 whose aluminum composition is 0.4 is firstly grown. Next, an optical waveguide layer 3 of N-type aluminum gallium arsenide whose aluminum composition is 0.35 is grown so as to completely fill a recessed part. An anti-oxidizing layer 10 of gallium arsenide previously grown in a reaction furnace for organic metal vapor growth, is completely eliminated by vapor phase etching. Then the following are grown in order; an active layer 4 of aluminum gallium arsenide whose aluminum composition is 0.15, a light reflecting layer 5 of P-type aluminum gallium arsenide whose aluminum composition is 0.6, a clad layer 6 of P-type aluminum gallium arsenide whose aluminum composition is 0.35, and a cap layer 7 of N-type gallium arsenide.
JP17820587A 1987-07-17 1987-07-17 Manufacture of semiconductor laser element Pending JPS6422088A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17820587A JPS6422088A (en) 1987-07-17 1987-07-17 Manufacture of semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17820587A JPS6422088A (en) 1987-07-17 1987-07-17 Manufacture of semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS6422088A true JPS6422088A (en) 1989-01-25

Family

ID=16044413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17820587A Pending JPS6422088A (en) 1987-07-17 1987-07-17 Manufacture of semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS6422088A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009088425A (en) * 2007-10-03 2009-04-23 Sony Corp Semiconductor laser, and manufacturing method therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009088425A (en) * 2007-10-03 2009-04-23 Sony Corp Semiconductor laser, and manufacturing method therefor
US8179941B2 (en) 2007-10-03 2012-05-15 Sony Corporation Laser diode and method of manufacturing the same
US8520712B2 (en) 2007-10-03 2013-08-27 Sony Corporation Laser diode and method of manufacturing the same

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