JP2020155581A5 - - Google Patents

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JP2020155581A5
JP2020155581A5 JP2019052614A JP2019052614A JP2020155581A5 JP 2020155581 A5 JP2020155581 A5 JP 2020155581A5 JP 2019052614 A JP2019052614 A JP 2019052614A JP 2019052614 A JP2019052614 A JP 2019052614A JP 2020155581 A5 JP2020155581 A5 JP 2020155581A5
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Japan
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carrier concentration
semiconductor region
semiconductor
electrode
distance
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JP2019052614A
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English (en)
Japanese (ja)
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JP7246983B2 (ja
JP2020155581A (ja
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Priority to JP2019052614A priority Critical patent/JP7246983B2/ja
Priority claimed from JP2019052614A external-priority patent/JP7246983B2/ja
Priority to CN201910584739.4A priority patent/CN111725307B/zh
Priority to US16/570,649 priority patent/US11164965B2/en
Publication of JP2020155581A publication Critical patent/JP2020155581A/ja
Publication of JP2020155581A5 publication Critical patent/JP2020155581A5/ja
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Publication of JP7246983B2 publication Critical patent/JP7246983B2/ja
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JP2019052614A 2019-03-20 2019-03-20 半導体装置 Active JP7246983B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019052614A JP7246983B2 (ja) 2019-03-20 2019-03-20 半導体装置
CN201910584739.4A CN111725307B (zh) 2019-03-20 2019-07-01 半导体装置
US16/570,649 US11164965B2 (en) 2019-03-20 2019-09-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019052614A JP7246983B2 (ja) 2019-03-20 2019-03-20 半導体装置

Publications (3)

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JP2020155581A JP2020155581A (ja) 2020-09-24
JP2020155581A5 true JP2020155581A5 (enExample) 2021-09-30
JP7246983B2 JP7246983B2 (ja) 2023-03-28

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JP2019052614A Active JP7246983B2 (ja) 2019-03-20 2019-03-20 半導体装置

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US (1) US11164965B2 (enExample)
JP (1) JP7246983B2 (enExample)
CN (1) CN111725307B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7387562B2 (ja) 2020-09-10 2023-11-28 株式会社東芝 半導体素子および半導体装置
JP7548776B2 (ja) * 2020-11-02 2024-09-10 株式会社東芝 半導体装置及び半導体モジュール
JP7444027B2 (ja) 2020-11-06 2024-03-06 三菱電機株式会社 半導体装置
JP7722648B2 (ja) * 2020-12-04 2025-08-13 国立大学法人 東京大学 半導体装置
JP7566609B2 (ja) * 2020-12-11 2024-10-15 株式会社東芝 半導体装置
JP7407757B2 (ja) * 2021-03-17 2024-01-04 株式会社東芝 半導体装置
CN115207112B (zh) 2021-04-09 2025-08-26 株式会社东芝 半导体装置及半导体装置的控制方法
DE102021115971A1 (de) * 2021-06-21 2022-12-22 Infineon Technologies Ag Feldstoppgebiet enthaltende halbleitervorrichtung
US20240379779A1 (en) * 2021-09-29 2024-11-14 Board Of Regents, The University Of Texas System Conductivity-controlled power semiconductor device
JP7703281B2 (ja) * 2021-11-09 2025-07-07 三菱電機株式会社 半導体装置、電力変換装置、および、半導体装置の駆動方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JP3111725B2 (ja) 1993-02-04 2000-11-27 富士電機株式会社 デュアルゲート半導体装置
EP1062692A1 (en) 1998-03-09 2000-12-27 Harris Corporation Devices formable by low temperature direct bonding
US9530672B2 (en) 2012-03-19 2016-12-27 Fuji Electric Co., Ltd. Production method for a semiconductor device
JP6102092B2 (ja) 2012-06-22 2017-03-29 サンケン電気株式会社 半導体装置及びその製造方法
JP6092760B2 (ja) 2013-12-05 2017-03-08 株式会社豊田中央研究所 縦型半導体装置
EP3101809A4 (en) * 2014-01-31 2017-08-23 Hitachi, Ltd. Semiconductor element drive apparatus and power conversion apparatus using same
JP2015177010A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置およびその製造方法
JP6720569B2 (ja) * 2015-02-25 2020-07-08 株式会社デンソー 半導体装置
CN107408581B (zh) 2015-09-16 2020-11-06 富士电机株式会社 半导体装置及半导体装置的制造方法
US20200105874A1 (en) * 2018-10-01 2020-04-02 Ipower Semiconductor Back side dopant activation in field stop igbt

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