CN111725307B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN111725307B
CN111725307B CN201910584739.4A CN201910584739A CN111725307B CN 111725307 B CN111725307 B CN 111725307B CN 201910584739 A CN201910584739 A CN 201910584739A CN 111725307 B CN111725307 B CN 111725307B
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CN
China
Prior art keywords
region
carrier concentration
electrode
type
gate electrode
Prior art date
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CN201910584739.4A
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English (en)
Chinese (zh)
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CN111725307A (zh
Inventor
岩鍜治阳子
末代知子
诹访刚史
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Publication of CN111725307A publication Critical patent/CN111725307A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201910584739.4A 2019-03-20 2019-07-01 半导体装置 Active CN111725307B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019052614A JP7246983B2 (ja) 2019-03-20 2019-03-20 半導体装置
JP2019-052614 2019-03-20

Publications (2)

Publication Number Publication Date
CN111725307A CN111725307A (zh) 2020-09-29
CN111725307B true CN111725307B (zh) 2024-04-26

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CN201910584739.4A Active CN111725307B (zh) 2019-03-20 2019-07-01 半导体装置

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US (1) US11164965B2 (enExample)
JP (1) JP7246983B2 (enExample)
CN (1) CN111725307B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7387562B2 (ja) 2020-09-10 2023-11-28 株式会社東芝 半導体素子および半導体装置
JP7548776B2 (ja) * 2020-11-02 2024-09-10 株式会社東芝 半導体装置及び半導体モジュール
JP7444027B2 (ja) 2020-11-06 2024-03-06 三菱電機株式会社 半導体装置
JP7722648B2 (ja) * 2020-12-04 2025-08-13 国立大学法人 東京大学 半導体装置
JP7566609B2 (ja) * 2020-12-11 2024-10-15 株式会社東芝 半導体装置
JP7407757B2 (ja) * 2021-03-17 2024-01-04 株式会社東芝 半導体装置
CN115207112B (zh) 2021-04-09 2025-08-26 株式会社东芝 半导体装置及半导体装置的控制方法
DE102021115971A1 (de) * 2021-06-21 2022-12-22 Infineon Technologies Ag Feldstoppgebiet enthaltende halbleitervorrichtung
US20240379779A1 (en) * 2021-09-29 2024-11-14 Board Of Regents, The University Of Texas System Conductivity-controlled power semiconductor device
JP7703281B2 (ja) * 2021-11-09 2025-07-07 三菱電機株式会社 半導体装置、電力変換装置、および、半導体装置の駆動方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980743A (en) * 1987-02-26 1990-12-25 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide semiconductor field effect transistor
JP2014007254A (ja) * 2012-06-22 2014-01-16 Sanken Electric Co Ltd 半導体装置及びその製造方法
CN104916672A (zh) * 2014-03-14 2015-09-16 株式会社东芝 半导体装置及其制造方法
CN105940606A (zh) * 2014-01-31 2016-09-14 株式会社日立制作所 半导体元件的驱动装置及使用该驱动装置的电力变换装置
CN107251231A (zh) * 2015-02-25 2017-10-13 株式会社电装 半导体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3111725B2 (ja) 1993-02-04 2000-11-27 富士電機株式会社 デュアルゲート半導体装置
EP1062692A1 (en) 1998-03-09 2000-12-27 Harris Corporation Devices formable by low temperature direct bonding
US9530672B2 (en) 2012-03-19 2016-12-27 Fuji Electric Co., Ltd. Production method for a semiconductor device
JP6092760B2 (ja) 2013-12-05 2017-03-08 株式会社豊田中央研究所 縦型半導体装置
CN107408581B (zh) 2015-09-16 2020-11-06 富士电机株式会社 半导体装置及半导体装置的制造方法
US20200105874A1 (en) * 2018-10-01 2020-04-02 Ipower Semiconductor Back side dopant activation in field stop igbt

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980743A (en) * 1987-02-26 1990-12-25 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide semiconductor field effect transistor
JP2014007254A (ja) * 2012-06-22 2014-01-16 Sanken Electric Co Ltd 半導体装置及びその製造方法
CN105940606A (zh) * 2014-01-31 2016-09-14 株式会社日立制作所 半导体元件的驱动装置及使用该驱动装置的电力变换装置
CN104916672A (zh) * 2014-03-14 2015-09-16 株式会社东芝 半导体装置及其制造方法
CN107251231A (zh) * 2015-02-25 2017-10-13 株式会社电装 半导体装置

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CN111725307A (zh) 2020-09-29
US11164965B2 (en) 2021-11-02
JP7246983B2 (ja) 2023-03-28
JP2020155581A (ja) 2020-09-24
US20200303526A1 (en) 2020-09-24

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