JP2012049545A5 - - Google Patents

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Publication number
JP2012049545A5
JP2012049545A5 JP2011185857A JP2011185857A JP2012049545A5 JP 2012049545 A5 JP2012049545 A5 JP 2012049545A5 JP 2011185857 A JP2011185857 A JP 2011185857A JP 2011185857 A JP2011185857 A JP 2011185857A JP 2012049545 A5 JP2012049545 A5 JP 2012049545A5
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JP
Japan
Prior art keywords
led
cell
emitting device
light emitting
semiconductor layer
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JP2011185857A
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English (en)
Japanese (ja)
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JP2012049545A (ja
JP5917859B2 (ja
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Publication of JP2012049545A5 publication Critical patent/JP2012049545A5/ja
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JP2011185857A 2010-08-30 2011-08-29 発光装置 Active JP5917859B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37819110P 2010-08-30 2010-08-30
US61/378,191 2010-08-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016015562A Division JP6174731B2 (ja) 2010-08-30 2016-01-29 発光装置

Publications (3)

Publication Number Publication Date
JP2012049545A JP2012049545A (ja) 2012-03-08
JP2012049545A5 true JP2012049545A5 (enExample) 2014-10-16
JP5917859B2 JP5917859B2 (ja) 2016-05-18

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ID=45695949

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2011185857A Active JP5917859B2 (ja) 2010-08-30 2011-08-29 発光装置
JP2016015562A Active JP6174731B2 (ja) 2010-08-30 2016-01-29 発光装置
JP2017133085A Active JP6772109B2 (ja) 2010-08-30 2017-07-06 発光ダイオード装置
JP2020164358A Active JP7186754B2 (ja) 2010-08-30 2020-09-30 発光装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2016015562A Active JP6174731B2 (ja) 2010-08-30 2016-01-29 発光装置
JP2017133085A Active JP6772109B2 (ja) 2010-08-30 2017-07-06 発光ダイオード装置
JP2020164358A Active JP7186754B2 (ja) 2010-08-30 2020-09-30 発光装置

Country Status (6)

Country Link
US (4) US9171883B2 (enExample)
JP (4) JP5917859B2 (enExample)
KR (6) KR101616094B1 (enExample)
CN (2) CN106206550B (enExample)
DE (2) DE102011123130B4 (enExample)
TW (5) TWI578489B (enExample)

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US9171883B2 (en) * 2010-08-30 2015-10-27 Epistar Corporation Light emitting device
CN102593284B (zh) * 2012-03-05 2014-06-18 映瑞光电科技(上海)有限公司 隔离深沟槽及其高压led芯片的制造方法
TWI549278B (zh) * 2012-03-12 2016-09-11 晶元光電股份有限公司 發光二極體元件
CN105977369A (zh) * 2016-05-26 2016-09-28 合肥彩虹蓝光科技有限公司 一种小电流高光效hv-led芯片
JP2019072137A (ja) * 2017-10-13 2019-05-16 サミー株式会社 回胴式遊技機
JP2019072140A (ja) * 2017-10-13 2019-05-16 サミー株式会社 回胴式遊技機
CN109950280B (zh) * 2019-02-26 2021-02-12 云谷（固安）科技有限公司 具有静电防护结构的装置及其制备方法
JP7217688B2 (ja) * 2019-09-26 2023-02-03 三菱電機株式会社 半導体装置、及び半導体素子の製造方法
US12015105B2 (en) 2020-01-16 2024-06-18 Rochester Institute Of Technology Capacitive control of electrostatic field effect optoelectronic device
CN112687780B (zh) * 2020-12-29 2022-02-11 厦门三安光电有限公司 一种高压发光二极管芯片
US20230007967A1 (en) * 2021-07-12 2023-01-12 Xiamen San'an Optoelectronics Co., Ltd. Light emitting diode device

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