JP2012049545A - 発光装置 - Google Patents
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- 230000001681 protective effect Effects 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 238000003491 array Methods 0.000 claims 1
- 230000006378 damage Effects 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 86
- 230000015556 catabolic process Effects 0.000 description 18
- 230000005684 electric field Effects 0.000 description 14
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- 239000003989 dielectric material Substances 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
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- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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Abstract
【解決手段】本発明は、単独の基板上に複数のLEDセルを有する直列接続されたLEDアレイアレイと;第1LEDセル、第2LEDセル、及び第1LEDセルと第2LEDセルとの間に挿入された少なくとも3つのLEDセルを有する直列接続LEDサブアレイであって、第1及び第2LEDセルの各々は、第1LEDセル及び/又は第2LEDセルの第1側面がLEDサブアレイに隣接し、第1LEDセルの第2側面が第2LEDセルの第2側面と隣接している、第1側面及び第2側面を有する、第1LEDセル、第2LEDセル及びLEDサブアレイと;第1及び第2LEDセルの第2側面間のトレンチと;発光装置の通常の動作電圧より高いサージ電圧によりトレンチの近傍で発光装置が破壊されないように、トレンチに近接して形成された保護構造と;を有する発光装置を提供する。
【選択図】図3
Description
図7と類似するに、図8は、本発明の他の実施形態に従った発光装置60の電気回路を示している。導電金属13に接続される浮遊導電性55を形成することに代えて、1つの接地導電線65が、最高電位を有するLEDセル11と最低電位を有するLEDセル11との間に形成され、接地導電線65は外部に接続されることにより接地されている。
A1 第1側面
A2 第2側面
B LED
B1 第1側面
B2 第2側面
C LED
C1 LED
C2 LED
C3 LED
10 発光装置
11 LEDセル
12 破壊領域
13 導電金属
15 基板
17 第1半導体層
19 第2半導体層
21 第2絶縁層
23 第1絶縁層
40 発光装置
41 絶縁壁
47 活性層
50 発光装置
55 浮遊導電線
60 発光装置
65 接地導電線
75 ESD破壊領域
80 発光装置
90 発光装置
105 ボンディングパッド
133 電流ブロック層
135 透明な導電層
Claims (24)
- 基板上に複数の発光装置(LED)セルを有する直列接続のLEDアレイであって、
第1LEDセル、第2LEDセル、及び第1LEDセルと第2LEDセルとの間に挿入された少なくとも3つのLEDセルを有する直列接続LEDサブアレイであって、前記第1LEDセル及び前記第2LEDセルの各々は、前記LEDサブアレイに隣接する前記第1LEDセル及び/又は前記第2LEDセルの第1側面及び第2側面を有し、前記第1LEDセルの前記第2側面は前記第2LEDセルの第2側面に隣接している、第1側面及び第2側面を有する、第1LEDセル、第2LEDセル及びLEDサブアレイと、
前記第1LEDセルの前記第2側面と前記第2LEDセルの前記第2側面との間のトレンチと、
当該発光装置が当該発光装置の通常の動作電圧より高いサージ電圧により前記トレンチの近傍で破壊されないようにするように、前記トレンチに近接して形成された保護構造と、
を有する、LEDアレイを有する発光装置。 - 前記保護構造は、
前記トレンチ内に形成された第1絶縁層と、
前記第1絶縁層上の第2絶縁層と、
を有する、請求項1に記載の発光装置。 - 前記第1LEDセル及び前記第2LEDセルの各々は前記第2側面に近接する側壁を有し、前記第1絶縁層は、前記第1LEDセルの前記側壁及び前記第2LEDセルの前記側壁を整合的に覆っている、請求項2に記載の発光装置。
- 前記第1LEDセル及び前記第2LEDセルの各々は上部面を有し、前記第2絶縁層は前記第1LEDセル及び前記第2LEDセルの前記上部面の殆どを覆っている、請求項2に記載の発光装置。
- 前記第2絶縁層は複数の層を有する、請求項2に記載の発光装置。
- 各々のLEDセルは、第1半導体層と第2半導体層との間に備えられた活性層と、前記第2半導体層上に備えられた導電金属とを有する、請求項1に記載の発光装置。
- 前記トレンチにおける前記保護構造の厚さは、前記第1半導体層、前記活性層、前記第2半導体層及び前記導電金属の厚さの和より大きい、請求項6に記載の発光装置。
- 前記トレンチにおける前記保護構造の前記厚さは、前記第1半導体層、前記活性層、前記第2半導体層及び前記導電金属の前記厚さの和の1.5倍より大きい、請求項6に記載の発光装置。
- 前記第1LEDセルの前記第1半導体層と前記第2LEDセルの前記第1半導体層との間の距離は50μmより小さい、請求項6に記載の発光装置。
- 前記第1LEDセルの前記第1半導体層と前記第2LEDセルの前記第1半導体層との間の前記距離は15μmより大きい、請求項9に記載の発光装置。
- 前記第1LEDセルの前記第1半導体層と前記第2LEDセルの前記第1半導体層との間の前記距離は30μmより大きい、請求項9に記載の発光装置。
- 前記第1LEDセルの前記導電金属と前記第2LEDセルの前記導電金属との間の最小距離は80μmより大きい、請求項7に記載の発光装置。
- 前記第1LEDセルの前記導電金属と前記第2LEDセルの前記導電金属との間の最小距離は100μmより大きい、請求項7に記載の発光装置。
- 前記導電金属は、少なくとも1つのフィンガーを有する拡張部を更に有し、前記少なくとも1つのフィンガーは拡大された端子を有する、請求項6に記載の発光装置。
- 前記LEDセルの1つは、前記導電金属の下に形成された電流ブロック層を更に有する、請求項6に記載の発光装置。
- 前記LEDセルの各々は、前記第2半導体層の上に形成された透明な導電層を更に有する、請求項6に記載の発光装置。
- 前記直列接続されたLEDアレイは、2つのブランチを有する少なくとも8つのLEDセルを有する、請求項1に記載の発光装置。
- 前記直列接続されたLEDアレイは少なくとも8つのLEDセルを有し、前記LEDアレイは2つの連続するLEDセル毎に配列方向を変える、請求項1に記載の発光装置。
- 前記LEDセルの前記第1半導体層の各々は、15μmより小さくない曲率半径を有する丸みを帯びた角を有する、請求項6に記載の発光装置。
- 前記丸みを帯びた角は前記第2側面に隣接している、請求項19に記載の発光装置。
- 前記直列接続されたLEDアレイにおける1つのLEDセルの前記第1半導体層は、前記直列接続されたLEDアレイにおける前記隣接したLEDセルの前記第2半導体層に電気的に接続されている、請求項6に記載の発光装置。
- 前記基板は上部面を有し、前記トレンチにおける前記第1絶縁層は前記基板の前記上部面に直接、接している、請求項2に記載の発光装置。
- 前記基板は単結晶基板であり、一連の前記LEDアレイの前記LEDセルは前記単結晶基板上にエピタキシャル成長されている、請求項1に記載の発光装置。
- 前記直列接続されたLEDアレイは、前記基板の角に備えられた2つのボンディングパッドを更に有する、請求項1に記載の発光装置。
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US37819110P | 2010-08-30 | 2010-08-30 | |
US61/378,191 | 2010-08-30 |
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JP2016015562A Division JP6174731B2 (ja) | 2010-08-30 | 2016-01-29 | 発光装置 |
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JP2012049545A true JP2012049545A (ja) | 2012-03-08 |
JP2012049545A5 JP2012049545A5 (ja) | 2014-10-16 |
JP5917859B2 JP5917859B2 (ja) | 2016-05-18 |
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JP2016015562A Active JP6174731B2 (ja) | 2010-08-30 | 2016-01-29 | 発光装置 |
JP2017133085A Active JP6772109B2 (ja) | 2010-08-30 | 2017-07-06 | 発光ダイオード装置 |
JP2020164358A Active JP7186754B2 (ja) | 2010-08-30 | 2020-09-30 | 発光装置 |
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JP (4) | JP5917859B2 (ja) |
KR (6) | KR101616094B1 (ja) |
CN (2) | CN102386175B (ja) |
DE (1) | DE102011053093B4 (ja) |
TW (5) | TWI662681B (ja) |
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JP2016122849A (ja) * | 2010-08-30 | 2016-07-07 | 晶元光電股▲ふん▼有限公司 | 発光装置 |
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CN102593284B (zh) * | 2012-03-05 | 2014-06-18 | 映瑞光电科技(上海)有限公司 | 隔离深沟槽及其高压led芯片的制造方法 |
TWI549278B (zh) * | 2012-03-12 | 2016-09-11 | 晶元光電股份有限公司 | 發光二極體元件 |
CN105977369A (zh) * | 2016-05-26 | 2016-09-28 | 合肥彩虹蓝光科技有限公司 | 一种小电流高光效hv-led芯片 |
WO2019049825A1 (ja) | 2017-09-08 | 2019-03-14 | 日本電子株式会社 | 自動分析装置および検体分注機構の異常検出方法 |
JP2019072137A (ja) * | 2017-10-13 | 2019-05-16 | サミー株式会社 | 回胴式遊技機 |
JP2019072140A (ja) * | 2017-10-13 | 2019-05-16 | サミー株式会社 | 回胴式遊技機 |
CN109950280B (zh) * | 2019-02-26 | 2021-02-12 | 云谷(固安)科技有限公司 | 具有静电防护结构的装置及其制备方法 |
WO2021146596A1 (en) | 2020-01-16 | 2021-07-22 | Matthew Hartensveld | Capacitive control of electrostatic field effect optoelectronic device |
CN112687780B (zh) * | 2020-12-29 | 2022-02-11 | 厦门三安光电有限公司 | 一种高压发光二极管芯片 |
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