JP6772109B2 - 発光ダイオード装置 - Google Patents
発光ダイオード装置 Download PDFInfo
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- JP6772109B2 JP6772109B2 JP2017133085A JP2017133085A JP6772109B2 JP 6772109 B2 JP6772109 B2 JP 6772109B2 JP 2017133085 A JP2017133085 A JP 2017133085A JP 2017133085 A JP2017133085 A JP 2017133085A JP 6772109 B2 JP6772109 B2 JP 6772109B2
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- 239000002184 metal Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 17
- 150000002739 metals Chemical class 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 85
- 230000006378 damage Effects 0.000 description 15
- 230000005684 electric field Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
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- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/50—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
図7と類似するに、図8は、本発明の他の実施形態に従った発光装置60の電気回路を示している。導電金属13に接続される浮遊導電性55を形成することに代えて、1つの接地導電線65が、最高電位を有するLEDセル11と最低電位を有するLEDセル11との間に形成され、接地導電線65は外部に接続されることにより接地されている。
A1 第1側面
A2 第2側面
B LED
B1 第1側面
B2 第2側面
C LED
C1 LED
C2 LED
C3 LED
10 発光装置
11 LEDセル
12 破壊領域
13 導電金属
15 基板
17 第1半導体層
19 第2半導体層
21 第2絶縁層
23 第1絶縁層
40 発光装置
41 絶縁壁
47 活性層
50 発光装置
55 浮遊導電線
60 発光装置
65 接地導電線
75 ESD破壊領域
80 発光装置
90 発光装置
105 ボンディングパッド
133 電流ブロック層
135 透明な導電層
Claims (8)
- 発光ダイオード装置であって、
単独の基板と、
前記単独の基板上に第1列及び第2列に配置され、かつ互いに順次に電気的に直列接続されたN個の発光ダイオードセルと、
複数の導電金属と、
隣接する任意の2つの発光ダイオードセルの間に設けられた複数のトレンチと、
前記トレンチの上に位置し、かつ、前記トレンチ内を位置する第1絶縁層及び前記第1絶縁層上に位置する第2絶縁層とを有する保護構造とを含み、
前記N個の発光ダイオードセルは、
前記単独の基板に面した第1面と、
前記第1面に対向する第2面と、
第1発光ダイオードセルと、
第2発光ダイオードセルと、
前記第1発光ダイオードセルと前記第2発光ダイオードセルとの間に配置され、かつ少なくとも3つのサブ発光ダイオードセルを有するサブ発光ダイオードセルアレイとを含み、
前記複数の導電金属は、前記第2面に形成され、かつそれぞれ前記第1発光ダイオードセルと前記サブ発光ダイオードセルアレイとの間、前記第2発光ダイオードセルと前記サブ発光ダイオードセルアレイとの間、及び隣接する前記サブ発光ダイオードセルの間に位置して、前記N個の発光ダイオードセルを電気的に直列させ、
前記N個の発光ダイオードセル中の連続して接続された3つの発光ダイオードセル毎に、その2個ずつの発光ダイオードセル間に第1直列方向と第2直列方向を有し、かつ前記第1直列方向と前記第2直列方向が異なり、
前記第1列と前記第2列には、互いに隣接し対応する発光ダイオードセルが含まる発光ダイオード装置。 - 前記第1直列方向と前記第2直列方向は垂直、非平行、または非垂直である、請求項1に記載の発光ダイオード装置。
- 前記第1発光ダイオードセルと前記第2発光ダイオードセルはそれぞれ第1側と第2側を有し、
前記第1発光ダイオードセルおよび/または前記第2発光ダイオードセルの前記第1側が前記サブ発光ダイオードセルアレイに隣接し、
前記第1発光ダイオードセルの前記第2側が前記第2発光ダイオードセルの前記第2側に隣接する、請求項1に記載の発光ダイオード装置。 - 前記発光ダイオードセルはそれぞれ、第1半導体層と第2半導体層の間に位置する活性層と含み、
前記第1発光ダイオードセルの前記第1半導体層と前記第2発光ダイオードセルの前記第1半導体層は、隣接する2つの前記第2側の間における距離が15〜50μmである、請求項3に記載の発光ダイオード装置。 - 前記複数の導電金属はそれぞれ拡張部を含み、
前記拡張部は前記導電金属の線幅より大きい曲率半径を有する端子を含む、請求項1に記載の発光ダイオード装置。 - 前記複数の導電金属は、前記第1直列方向および前記第2直列方向に沿って延伸する、請求項1に記載の発光ダイオード装置。
- 前記第1発光ダイオードセル上の前記導電金属と前記第2発光ダイオードセル上の前記導電金属との最小間隔は80μmより大きい、請求項1に記載の発光ダイオード装置。
- 前記第1列と前記第2列において互いに隣接する任意の4つの発光ダイオードセルの間には、4つのトレンチ及び3つの導電金属が含まれ、かつ前記3つの導電金属がそれぞれ前記4つのトレンチのうちの3つの上に位置し、その他の前記トレンチの上に導電金属がない、請求項1に記載の発光ダイオード装置。
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US37819110P | 2010-08-30 | 2010-08-30 | |
US61/378,191 | 2010-08-30 |
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JP2016015562A Division JP6174731B2 (ja) | 2010-08-30 | 2016-01-29 | 発光装置 |
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JP2020164358A Division JP7186754B2 (ja) | 2010-08-30 | 2020-09-30 | 発光装置 |
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JP2017199927A JP2017199927A (ja) | 2017-11-02 |
JP6772109B2 true JP6772109B2 (ja) | 2020-10-21 |
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JP2011185857A Active JP5917859B2 (ja) | 2010-08-30 | 2011-08-29 | 発光装置 |
JP2016015562A Active JP6174731B2 (ja) | 2010-08-30 | 2016-01-29 | 発光装置 |
JP2017133085A Active JP6772109B2 (ja) | 2010-08-30 | 2017-07-06 | 発光ダイオード装置 |
JP2020164358A Active JP7186754B2 (ja) | 2010-08-30 | 2020-09-30 | 発光装置 |
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JP2016015562A Active JP6174731B2 (ja) | 2010-08-30 | 2016-01-29 | 発光装置 |
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US (4) | US9171883B2 (ja) |
JP (4) | JP5917859B2 (ja) |
KR (6) | KR101616094B1 (ja) |
CN (2) | CN106206550B (ja) |
DE (1) | DE102011053093B4 (ja) |
TW (5) | TWI611553B (ja) |
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TWI549278B (zh) * | 2012-03-12 | 2016-09-11 | 晶元光電股份有限公司 | 發光二極體元件 |
CN105977369A (zh) * | 2016-05-26 | 2016-09-28 | 合肥彩虹蓝光科技有限公司 | 一种小电流高光效hv-led芯片 |
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JP2019072140A (ja) * | 2017-10-13 | 2019-05-16 | サミー株式会社 | 回胴式遊技機 |
JP2019072137A (ja) * | 2017-10-13 | 2019-05-16 | サミー株式会社 | 回胴式遊技機 |
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