JP5917859B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP5917859B2 JP5917859B2 JP2011185857A JP2011185857A JP5917859B2 JP 5917859 B2 JP5917859 B2 JP 5917859B2 JP 2011185857 A JP2011185857 A JP 2011185857A JP 2011185857 A JP2011185857 A JP 2011185857A JP 5917859 B2 JP5917859 B2 JP 5917859B2
- Authority
- JP
- Japan
- Prior art keywords
- led
- cell
- led cell
- emitting device
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 18
- 230000001681 protective effect Effects 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 86
- 230000015556 catabolic process Effects 0.000 description 18
- 230000005684 electric field Effects 0.000 description 14
- 230000006378 damage Effects 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/50—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
図7と類似するに、図8は、本発明の他の実施形態に従った発光装置60の電気回路を示している。導電金属13に接続される浮遊導電性55を形成することに代えて、1つの接地導電線65が、最高電位を有するLEDセル11と最低電位を有するLEDセル11との間に形成され、接地導電線65は外部に接続されることにより接地されている。
A1 第1側面
A2 第2側面
B LED
B1 第1側面
B2 第2側面
C LED
C1 LED
C2 LED
C3 LED
10 発光装置
11 LEDセル
12 破壊領域
13 導電金属
15 基板
17 第1半導体層
19 第2半導体層
21 第2絶縁層
23 第1絶縁層
40 発光装置
41 絶縁壁
47 活性層
50 発光装置
55 浮遊導電線
60 発光装置
65 接地導電線
75 ESD破壊領域
80 発光装置
90 発光装置
105 ボンディングパッド
133 電流ブロック層
135 透明な導電層
Claims (8)
- 基板上に複数の発光ダイオード(LED)セルを有する直列接続のLEDアレイを含む発光装置であって、
前記直列接続のLEDアレイは、第1LEDセルと、第2LEDセルと、第1LEDセルと第2LEDセルとの間に挿入された少なくとも3つのLEDセルを有する直列接続のLEDサブアレイとを含み、
前記第1LEDセル及び前記第2LEDセルの各々は第1側面及び第2側面を有し、前記第1LEDセル及び前記第2LEDセルの前記第1側面が前記LEDサブアレイに隣接し、前記第1LEDセルの前記第2側面が前記第2LEDセルの前記第2側面に隣接し、前記第1LEDセル及び前記第2LEDセルの各々は上部面を有し、
前記発光装置は、
前記第1LEDセルの前記第2側面と前記第2LEDセルの前記第2側面との間のトレンチと、
通常の動作電圧より高いサージ電圧によって前記発光装置が破壊されることを防止するように、前記トレンチの近傍に形成された保護構造と、
隣接するLEDセルの間に形成され、前記複数のLEDセルを直列接続させる導電金属とを有し、
前記保護構造は、前記トレンチ内に形成された第1絶縁層と前記第1絶縁層上の第2絶縁層を有し、前記第1絶縁層は延伸して前記導電金属を覆い、前記第2絶縁層は前記第1LEDセル及び前記第2LEDセルの前記上部面の殆どを覆っており、
前記LEDサブアレイは、隣接するLEDセルの直列接続方向と同じ方向に、かつ前記導電金属によって直接接続されるLEDセルの間に前記第2絶縁層を有しない、発光装置。 - 前記第1LEDセル及び前記第2LEDセルの各々は前記第2側面に近接する側壁を有し、前記第1絶縁層は、前記第1LEDセルの前記側壁及び前記第2LEDセルの前記側壁を覆う、請求項1に記載の発光装置。
- 前記第2絶縁層は前記第1LEDセル及び前記第2LEDセルの前記上部面の殆どを覆うとともに/或いは前記トレンチ内に形成された第1絶縁層は前記上部面に直接接触される、請求項1に記載の発光装置。
- 基板上に複数の発光ダイオード(LED)セルを有する直列接続のLEDアレイを含む発光装置であって、
前記直列接続のLEDアレイは、第1LEDセルと、第2LEDセルと、第1LEDセルと第2LEDセルとの間に挿入された少なくとも3つのLEDセルを有する直列接続のLEDサブアレイとを含み、
前記第1LEDセル及び前記第2LEDセルの各々は第1側面及び第2側面を有し、前記第1LEDセル及び前記第2LEDセルの前記第1側面が前記LEDサブアレイに隣接し、前記第1LEDセルの前記第2側面が前記第2LEDセルの前記第2側面に隣接し、
前記発光装置は、
前記第1LEDセルの前記第2側面と前記第2LEDセルの前記第2側面との間のトレンチと、
通常の動作電圧より高いサージ電圧によって前記発光装置が破壊されることを防止するように、前記トレンチの近傍に形成された保護構造とを有し、
各々のLEDセルは、前記基板上の第1半導体層と、前記第1半導体層上の第2半導体層と、前記第1半導体層と前記第2半導体層の間に備えられた活性層と、前記第2半導体層上に備えられ、隣接するLEDセルを直列接続させる導電金属とを有し、
前記保護構造は、前記トレンチ内に形成された第1絶縁層と前記第1絶縁層上の第2絶縁層を有し、前記第1絶縁層は延伸して前記導電金属を覆っており、
前記LEDサブアレイは、隣接するLEDセルの直列接続方向と同じ方向に、かつ前記導電金属によって直接接続されるLEDセルの間には前記第2絶縁層を有しない、
前記トレンチにおける前記保護構造の厚さは、前記第1半導体層、前記活性層、前記第2半導体層及び前記導電金属の総厚さより厚いか、或いはその総厚さの1.5倍より厚い発光装置。 - 前記第1LEDセルの前記第1半導体層と前記第2LEDセルの前記第1半導体層との間の距離は15〜100μmの範囲内にある、請求項4に記載の発光装置。
- 前記導電金属は拡張部を更に含み、前記拡張部は前記導電金属の線幅より大きい半径を有する端子を有する、請求項4に記載の発光装置。
- 前記直列接続のLEDアレイは少なくとも8つのLEDセルを有し、該LEDアレイは2つのブランチを更に有するとともに/或いは該LEDアレイにおいて連続されたいずれか2つのLEDセルはそれらの配列方向を変えることができる、請求項1又は4に記載の発光装置。
- 前記LEDセルの前記第1半導体層の各々は丸みを帯びた角を有し、該丸みを帯びた角は15μmより小さくない曲率半径を有するとともに/或いは該丸みを帯びた角は前記第2側面に隣接する、請求項4に記載の発光装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US37819110P | 2010-08-30 | 2010-08-30 | |
US61/378,191 | 2010-08-30 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016015562A Division JP6174731B2 (ja) | 2010-08-30 | 2016-01-29 | 発光装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012049545A JP2012049545A (ja) | 2012-03-08 |
JP2012049545A5 JP2012049545A5 (ja) | 2014-10-16 |
JP5917859B2 true JP5917859B2 (ja) | 2016-05-18 |
Family
ID=45695949
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011185857A Active JP5917859B2 (ja) | 2010-08-30 | 2011-08-29 | 発光装置 |
JP2016015562A Active JP6174731B2 (ja) | 2010-08-30 | 2016-01-29 | 発光装置 |
JP2017133085A Active JP6772109B2 (ja) | 2010-08-30 | 2017-07-06 | 発光ダイオード装置 |
JP2020164358A Active JP7186754B2 (ja) | 2010-08-30 | 2020-09-30 | 発光装置 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016015562A Active JP6174731B2 (ja) | 2010-08-30 | 2016-01-29 | 発光装置 |
JP2017133085A Active JP6772109B2 (ja) | 2010-08-30 | 2017-07-06 | 発光ダイオード装置 |
JP2020164358A Active JP7186754B2 (ja) | 2010-08-30 | 2020-09-30 | 発光装置 |
Country Status (6)
Country | Link |
---|---|
US (4) | US9171883B2 (ja) |
JP (4) | JP5917859B2 (ja) |
KR (6) | KR101616094B1 (ja) |
CN (2) | CN106206550B (ja) |
DE (1) | DE102011053093B4 (ja) |
TW (5) | TWI702707B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9171883B2 (en) * | 2010-08-30 | 2015-10-27 | Epistar Corporation | Light emitting device |
CN102593284B (zh) * | 2012-03-05 | 2014-06-18 | 映瑞光电科技(上海)有限公司 | 隔离深沟槽及其高压led芯片的制造方法 |
TWI549278B (zh) * | 2012-03-12 | 2016-09-11 | 晶元光電股份有限公司 | 發光二極體元件 |
CN105977369A (zh) * | 2016-05-26 | 2016-09-28 | 合肥彩虹蓝光科技有限公司 | 一种小电流高光效hv-led芯片 |
JP7167037B2 (ja) | 2017-09-08 | 2022-11-08 | 日本電子株式会社 | 自動分析装置および検体分注機構の異常検出方法 |
JP2019072137A (ja) * | 2017-10-13 | 2019-05-16 | サミー株式会社 | 回胴式遊技機 |
JP2019072140A (ja) * | 2017-10-13 | 2019-05-16 | サミー株式会社 | 回胴式遊技機 |
CN109950280B (zh) * | 2019-02-26 | 2021-02-12 | 云谷(固安)科技有限公司 | 具有静电防护结构的装置及其制备方法 |
JP7217688B2 (ja) * | 2019-09-26 | 2023-02-03 | 三菱電機株式会社 | 半導体装置、及び半導体素子の製造方法 |
WO2021146596A1 (en) | 2020-01-16 | 2021-07-22 | Matthew Hartensveld | Capacitive control of electrostatic field effect optoelectronic device |
CN112687780B (zh) * | 2020-12-29 | 2022-02-11 | 厦门三安光电有限公司 | 一种高压发光二极管芯片 |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4538342A (en) * | 1984-06-15 | 1985-09-03 | At&T Bell Laboratories | Forming platinum contacts to in-based group III-V compound devices |
US6097076A (en) * | 1997-03-25 | 2000-08-01 | Micron Technology, Inc. | Self-aligned isolation trench |
US5789768A (en) * | 1997-06-23 | 1998-08-04 | Epistar Corporation | Light emitting diode having transparent conductive oxide formed on the contact layer |
JP2002026384A (ja) * | 2000-07-05 | 2002-01-25 | Nichia Chem Ind Ltd | 集積型窒化物半導体発光素子 |
JP2002118288A (ja) * | 2000-10-12 | 2002-04-19 | Tokai Rika Co Ltd | 半導体光デバイス |
DE10051159C2 (de) * | 2000-10-16 | 2002-09-19 | Osram Opto Semiconductors Gmbh | LED-Modul, z.B. Weißlichtquelle |
US6547249B2 (en) * | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
JP3822545B2 (ja) * | 2002-04-12 | 2006-09-20 | 士郎 酒井 | 発光装置 |
US7511311B2 (en) * | 2002-08-01 | 2009-03-31 | Nichia Corporation | Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same |
JP3912219B2 (ja) * | 2002-08-01 | 2007-05-09 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
US20050017371A1 (en) * | 2003-07-22 | 2005-01-27 | Zhiyong Wang | Electronic assembly having a die with rounded corner edge portions and a method of fabricating the same |
JP4273928B2 (ja) | 2003-10-30 | 2009-06-03 | 豊田合成株式会社 | Iii−v族窒化物半導体素子 |
KR100576856B1 (ko) | 2003-12-23 | 2006-05-10 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 제조방법 |
US7615798B2 (en) * | 2004-03-29 | 2009-11-10 | Nichia Corporation | Semiconductor light emitting device having an electrode made of a conductive oxide |
US7064353B2 (en) * | 2004-05-26 | 2006-06-20 | Philips Lumileds Lighting Company, Llc | LED chip with integrated fast switching diode for ESD protection |
US7566908B2 (en) * | 2004-11-29 | 2009-07-28 | Yongsheng Zhao | Gan-based and ZnO-based LED |
US7821023B2 (en) | 2005-01-10 | 2010-10-26 | Cree, Inc. | Solid state lighting component |
EP1864338A4 (en) * | 2005-02-04 | 2010-01-20 | Seoul Opto Device Co Ltd | LIGHT-EMITTING COMPONENT WITH SEVERAL LIGHT-EMITTING CELLS AND MANUFACTURING METHOD THEREFOR |
JP2006228855A (ja) | 2005-02-16 | 2006-08-31 | Rohm Co Ltd | 半導体発光素子およびその製法 |
JP3117281U (ja) | 2005-09-30 | 2006-01-05 | 鼎元光電科技股▲ふん▼有限公司 | 効率の高いマトリックス発光ダイオード素子 |
JP2008047850A (ja) * | 2006-07-19 | 2008-02-28 | Mitsubishi Cable Ind Ltd | 窒化物半導体発光ダイオード素子 |
KR20070111091A (ko) * | 2006-05-16 | 2007-11-21 | 삼성전기주식회사 | 질화물계 반도체 발광다이오드 |
KR101273177B1 (ko) | 2006-10-19 | 2013-06-14 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조 방법 |
EP2111640B1 (en) | 2007-01-22 | 2019-05-08 | Cree, Inc. | Fault tolerant light emitter and method of fabricating the same |
EP3848970A1 (en) * | 2007-01-22 | 2021-07-14 | Cree, Inc. | Multiple light emitting diode emitter |
KR101239853B1 (ko) * | 2007-03-13 | 2013-03-06 | 서울옵토디바이스주식회사 | 교류용 발광 다이오드 |
JP2008270616A (ja) * | 2007-04-23 | 2008-11-06 | Rohm Co Ltd | 半導体発光装置の製造方法および半導体発光装置 |
DE102008005935A1 (de) * | 2007-11-29 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Halbleiteranordnung sowie Verfahren zur Herstellung einer Halbleiteranordnung |
US20090152683A1 (en) * | 2007-12-18 | 2009-06-18 | National Semiconductor Corporation | Rounded die configuration for stress minimization and enhanced thermo-mechanical reliability |
JP2009238893A (ja) | 2008-03-26 | 2009-10-15 | Oki Data Corp | 半導体装置、光プリントヘッドおよび画像形成装置 |
JP5229034B2 (ja) * | 2008-03-28 | 2013-07-03 | サンケン電気株式会社 | 発光装置 |
KR100988041B1 (ko) * | 2008-05-15 | 2010-10-18 | 주식회사 에피밸리 | 반도체 발광소자 |
US8823179B2 (en) * | 2008-05-21 | 2014-09-02 | Chia-Lun Tsai | Electronic device package and method for fabricating the same |
JP2009302314A (ja) * | 2008-06-13 | 2009-12-24 | Rohm Co Ltd | GaN系半導体装置 |
TW201007975A (en) * | 2008-08-05 | 2010-02-16 | Helio Optoelectronics Corp | Structure of AC light-emitting diode dies |
JP5305790B2 (ja) * | 2008-08-28 | 2013-10-02 | 株式会社東芝 | 半導体発光素子 |
WO2010050694A2 (ko) * | 2008-10-29 | 2010-05-06 | 서울옵토디바이스주식회사 | 발광 다이오드 |
US8062916B2 (en) | 2008-11-06 | 2011-11-22 | Koninklijke Philips Electronics N.V. | Series connected flip chip LEDs with growth substrate removed |
TWI466266B (zh) * | 2009-02-24 | 2014-12-21 | Epistar Corp | 陣列式發光元件及其裝置 |
JP5352857B2 (ja) * | 2009-03-31 | 2013-11-27 | 旭化成エレクトロニクス株式会社 | 光デバイス |
KR101706915B1 (ko) * | 2009-05-12 | 2017-02-15 | 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 | 변형가능 및 반투과 디스플레이를 위한 초박형, 미세구조 무기발광다이오드의 인쇄 어셈블리 |
US8400064B2 (en) * | 2009-09-09 | 2013-03-19 | Koninklijke Philips Electronics N.V. | Zener diode protection network in submount for LEDs connected in series |
TWM379173U (en) * | 2009-12-07 | 2010-04-21 | Universal Optoelectronics Co Ltd | Cascaded light-emitting diode device |
US9171883B2 (en) * | 2010-08-30 | 2015-10-27 | Epistar Corporation | Light emitting device |
JP2013222269A (ja) | 2012-04-13 | 2013-10-28 | Fujitsu Frontech Ltd | 見舞管理システム、その検索サーバ、プログラム |
-
2011
- 2011-08-04 US US13/198,396 patent/US9171883B2/en active Active
- 2011-08-12 US US13/209,085 patent/US8823022B2/en active Active
- 2011-08-26 KR KR1020110085726A patent/KR101616094B1/ko active IP Right Grant
- 2011-08-26 TW TW108114767A patent/TWI702707B/zh active
- 2011-08-26 TW TW105108555A patent/TWI578489B/zh active
- 2011-08-26 TW TW106141275A patent/TWI662681B/zh active
- 2011-08-26 TW TW100130849A patent/TWI533432B/zh active
- 2011-08-26 TW TW106106006A patent/TWI611553B/zh active
- 2011-08-29 JP JP2011185857A patent/JP5917859B2/ja active Active
- 2011-08-29 DE DE102011053093.2A patent/DE102011053093B4/de active Active
- 2011-08-30 CN CN201610587606.9A patent/CN106206550B/zh active Active
- 2011-08-30 CN CN201110252361.1A patent/CN102386175B/zh active Active
-
2015
- 2015-10-02 US US14/874,063 patent/US9893024B2/en active Active
-
2016
- 2016-01-29 JP JP2016015562A patent/JP6174731B2/ja active Active
- 2016-04-20 KR KR1020160048086A patent/KR101741130B1/ko active IP Right Grant
-
2017
- 2017-05-22 KR KR1020170062854A patent/KR101925527B1/ko active IP Right Grant
- 2017-07-06 JP JP2017133085A patent/JP6772109B2/ja active Active
-
2018
- 2018-01-26 US US15/881,395 patent/US10546824B2/en active Active
- 2018-11-29 KR KR1020180150623A patent/KR102017859B1/ko active IP Right Grant
-
2019
- 2019-08-27 KR KR1020190105202A patent/KR102176761B1/ko active IP Right Grant
-
2020
- 2020-09-30 JP JP2020164358A patent/JP7186754B2/ja active Active
- 2020-11-03 KR KR1020200145546A patent/KR102312627B1/ko active IP Right Grant
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6174731B2 (ja) | 発光装置 | |
US10825956B2 (en) | Light-emitting device | |
TWI803784B (zh) | 發光元件 | |
US20210104477A1 (en) | Pad structure | |
KR20160087050A (ko) | 발광소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140828 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140828 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150430 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150512 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150811 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150929 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160129 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20160205 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160308 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160407 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5917859 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |