CN106206550B - 发光二极管元件 - Google Patents
发光二极管元件 Download PDFInfo
- Publication number
- CN106206550B CN106206550B CN201610587606.9A CN201610587606A CN106206550B CN 106206550 B CN106206550 B CN 106206550B CN 201610587606 A CN201610587606 A CN 201610587606A CN 106206550 B CN106206550 B CN 106206550B
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light emitting
- light
- led unit
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/50—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37819110P | 2010-08-30 | 2010-08-30 | |
| US61/378,191 | 2010-08-30 | ||
| CN201110252361.1A CN102386175B (zh) | 2010-08-30 | 2011-08-30 | 发光二极管元件 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110252361.1A Division CN102386175B (zh) | 2010-08-30 | 2011-08-30 | 发光二极管元件 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106206550A CN106206550A (zh) | 2016-12-07 |
| CN106206550B true CN106206550B (zh) | 2019-01-15 |
Family
ID=45695949
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610587606.9A Active CN106206550B (zh) | 2010-08-30 | 2011-08-30 | 发光二极管元件 |
| CN201110252361.1A Active CN102386175B (zh) | 2010-08-30 | 2011-08-30 | 发光二极管元件 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110252361.1A Active CN102386175B (zh) | 2010-08-30 | 2011-08-30 | 发光二极管元件 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US9171883B2 (enExample) |
| JP (4) | JP5917859B2 (enExample) |
| KR (6) | KR101616094B1 (enExample) |
| CN (2) | CN106206550B (enExample) |
| DE (2) | DE102011123130B4 (enExample) |
| TW (5) | TWI578489B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9171883B2 (en) * | 2010-08-30 | 2015-10-27 | Epistar Corporation | Light emitting device |
| CN102593284B (zh) * | 2012-03-05 | 2014-06-18 | 映瑞光电科技(上海)有限公司 | 隔离深沟槽及其高压led芯片的制造方法 |
| TWI549278B (zh) * | 2012-03-12 | 2016-09-11 | 晶元光電股份有限公司 | 發光二極體元件 |
| CN105977369A (zh) * | 2016-05-26 | 2016-09-28 | 合肥彩虹蓝光科技有限公司 | 一种小电流高光效hv-led芯片 |
| JP2019072137A (ja) * | 2017-10-13 | 2019-05-16 | サミー株式会社 | 回胴式遊技機 |
| JP2019072140A (ja) * | 2017-10-13 | 2019-05-16 | サミー株式会社 | 回胴式遊技機 |
| CN109950280B (zh) * | 2019-02-26 | 2021-02-12 | 云谷(固安)科技有限公司 | 具有静电防护结构的装置及其制备方法 |
| JP7217688B2 (ja) * | 2019-09-26 | 2023-02-03 | 三菱電機株式会社 | 半導体装置、及び半導体素子の製造方法 |
| US12015105B2 (en) | 2020-01-16 | 2024-06-18 | Rochester Institute Of Technology | Capacitive control of electrostatic field effect optoelectronic device |
| CN112687780B (zh) * | 2020-12-29 | 2022-02-11 | 厦门三安光电有限公司 | 一种高压发光二极管芯片 |
| US20230007967A1 (en) * | 2021-07-12 | 2023-01-12 | Xiamen San'an Optoelectronics Co., Ltd. | Light emitting diode device |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010046753A1 (en) * | 1997-03-25 | 2001-11-29 | Fernando Gonzalez | Method for forming a self-aligned isolation trench |
| JP3117281U (ja) * | 2005-09-30 | 2006-01-05 | 鼎元光電科技股▲ふん▼有限公司 | 効率の高いマトリックス発光ダイオード素子 |
| CN1826695A (zh) * | 2003-07-22 | 2006-08-30 | 英特尔公司 | 具有带有圆形转角边缘部分的芯片的电子部件以及制作该部件的方法 |
| CN101075656A (zh) * | 2006-05-16 | 2007-11-21 | 三星电机株式会社 | 氮化物基半导体发光二极管 |
| US20090152683A1 (en) * | 2007-12-18 | 2009-06-18 | National Semiconductor Corporation | Rounded die configuration for stress minimization and enhanced thermo-mechanical reliability |
| CN101582474A (zh) * | 2008-05-15 | 2009-11-18 | 艾比维利股份有限公司 | 半导体发光器件 |
| CN101601135A (zh) * | 2007-01-22 | 2009-12-09 | 科锐Led照明科技公司 | 使用发光器件外部互连阵列的照明装置以及其制造方法 |
| TW201007975A (en) * | 2008-08-05 | 2010-02-16 | Helio Optoelectronics Corp | Structure of AC light-emitting diode dies |
| US20100109030A1 (en) * | 2008-11-06 | 2010-05-06 | Koninklijke Philips Electronics N.V. | Series connected flip chip leds with growth substrate removed |
| TWI389287B (zh) * | 2004-05-26 | 2013-03-11 | 飛利浦露明光學公司 | 具有用於靜電放電保護之積體快速切換二極體之發光二極體晶片 |
| CN103022024A (zh) * | 2008-05-23 | 2013-04-03 | 克利公司 | 固态照明部件 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4538342A (en) * | 1984-06-15 | 1985-09-03 | At&T Bell Laboratories | Forming platinum contacts to in-based group III-V compound devices |
| US5789768A (en) * | 1997-06-23 | 1998-08-04 | Epistar Corporation | Light emitting diode having transparent conductive oxide formed on the contact layer |
| JP2002026384A (ja) * | 2000-07-05 | 2002-01-25 | Nichia Chem Ind Ltd | 集積型窒化物半導体発光素子 |
| JP2002118288A (ja) * | 2000-10-12 | 2002-04-19 | Tokai Rika Co Ltd | 半導体光デバイス |
| DE10051159C2 (de) * | 2000-10-16 | 2002-09-19 | Osram Opto Semiconductors Gmbh | LED-Modul, z.B. Weißlichtquelle |
| US6547249B2 (en) * | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
| JP3822545B2 (ja) * | 2002-04-12 | 2006-09-20 | 士郎 酒井 | 発光装置 |
| JP3912219B2 (ja) * | 2002-08-01 | 2007-05-09 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
| AU2003252359A1 (en) * | 2002-08-01 | 2004-02-23 | Nichia Corporation | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
| JP4273928B2 (ja) | 2003-10-30 | 2009-06-03 | 豊田合成株式会社 | Iii−v族窒化物半導体素子 |
| KR100576856B1 (ko) | 2003-12-23 | 2006-05-10 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 제조방법 |
| US7615798B2 (en) * | 2004-03-29 | 2009-11-10 | Nichia Corporation | Semiconductor light emitting device having an electrode made of a conductive oxide |
| US7566908B2 (en) * | 2004-11-29 | 2009-07-28 | Yongsheng Zhao | Gan-based and ZnO-based LED |
| WO2006083065A1 (en) * | 2005-02-04 | 2006-08-10 | Seoul Opto Device Co., Ltd. | Light emitting device having a plurality of light emitting cells and method of fabricating the same |
| JP2006228855A (ja) | 2005-02-16 | 2006-08-31 | Rohm Co Ltd | 半導体発光素子およびその製法 |
| JP2008047850A (ja) * | 2006-07-19 | 2008-02-28 | Mitsubishi Cable Ind Ltd | 窒化物半導体発光ダイオード素子 |
| KR101273177B1 (ko) | 2006-10-19 | 2013-06-14 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조 방법 |
| WO2008091837A2 (en) * | 2007-01-22 | 2008-07-31 | Cree Led Lighting Solutions, Inc. | Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters |
| KR20110110867A (ko) * | 2007-03-13 | 2011-10-07 | 서울옵토디바이스주식회사 | 교류용 발광 다이오드 |
| JP2008270616A (ja) | 2007-04-23 | 2008-11-06 | Rohm Co Ltd | 半導体発光装置の製造方法および半導体発光装置 |
| DE102008005935A1 (de) * | 2007-11-29 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Halbleiteranordnung sowie Verfahren zur Herstellung einer Halbleiteranordnung |
| JP2009238893A (ja) | 2008-03-26 | 2009-10-15 | Oki Data Corp | 半導体装置、光プリントヘッドおよび画像形成装置 |
| JP5229034B2 (ja) * | 2008-03-28 | 2013-07-03 | サンケン電気株式会社 | 発光装置 |
| US8823179B2 (en) * | 2008-05-21 | 2014-09-02 | Chia-Lun Tsai | Electronic device package and method for fabricating the same |
| JP2009302314A (ja) * | 2008-06-13 | 2009-12-24 | Rohm Co Ltd | GaN系半導体装置 |
| JP5305790B2 (ja) * | 2008-08-28 | 2013-10-02 | 株式会社東芝 | 半導体発光素子 |
| WO2010050694A2 (ko) * | 2008-10-29 | 2010-05-06 | 서울옵토디바이스주식회사 | 발광 다이오드 |
| TWI466266B (zh) * | 2009-02-24 | 2014-12-21 | 晶元光電股份有限公司 | 陣列式發光元件及其裝置 |
| JP5352857B2 (ja) * | 2009-03-31 | 2013-11-27 | 旭化成エレクトロニクス株式会社 | 光デバイス |
| US8865489B2 (en) * | 2009-05-12 | 2014-10-21 | The Board Of Trustees Of The University Of Illinois | Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays |
| US8400064B2 (en) * | 2009-09-09 | 2013-03-19 | Koninklijke Philips Electronics N.V. | Zener diode protection network in submount for LEDs connected in series |
| TWM379173U (en) * | 2009-12-07 | 2010-04-21 | Universal Optoelectronics Co Ltd | Cascaded light-emitting diode device |
| US9171883B2 (en) * | 2010-08-30 | 2015-10-27 | Epistar Corporation | Light emitting device |
| JP2013222269A (ja) | 2012-04-13 | 2013-10-28 | Fujitsu Frontech Ltd | 見舞管理システム、その検索サーバ、プログラム |
-
2011
- 2011-08-04 US US13/198,396 patent/US9171883B2/en active Active
- 2011-08-12 US US13/209,085 patent/US8823022B2/en active Active
- 2011-08-26 TW TW105108555A patent/TWI578489B/zh active
- 2011-08-26 KR KR1020110085726A patent/KR101616094B1/ko active Active
- 2011-08-26 TW TW108114767A patent/TWI702707B/zh active
- 2011-08-26 TW TW100130849A patent/TWI533432B/zh active
- 2011-08-26 TW TW106141275A patent/TWI662681B/zh active
- 2011-08-26 TW TW106106006A patent/TWI611553B/zh active
- 2011-08-29 JP JP2011185857A patent/JP5917859B2/ja active Active
- 2011-08-29 DE DE102011123130.0A patent/DE102011123130B4/de active Active
- 2011-08-29 DE DE102011053093.2A patent/DE102011053093B4/de active Active
- 2011-08-30 CN CN201610587606.9A patent/CN106206550B/zh active Active
- 2011-08-30 CN CN201110252361.1A patent/CN102386175B/zh active Active
-
2015
- 2015-10-02 US US14/874,063 patent/US9893024B2/en active Active
-
2016
- 2016-01-29 JP JP2016015562A patent/JP6174731B2/ja active Active
- 2016-04-20 KR KR1020160048086A patent/KR101741130B1/ko active Active
-
2017
- 2017-05-22 KR KR1020170062854A patent/KR101925527B1/ko active Active
- 2017-07-06 JP JP2017133085A patent/JP6772109B2/ja active Active
-
2018
- 2018-01-26 US US15/881,395 patent/US10546824B2/en active Active
- 2018-11-29 KR KR1020180150623A patent/KR102017859B1/ko active Active
-
2019
- 2019-08-27 KR KR1020190105202A patent/KR102176761B1/ko active Active
-
2020
- 2020-09-30 JP JP2020164358A patent/JP7186754B2/ja active Active
- 2020-11-03 KR KR1020200145546A patent/KR102312627B1/ko active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010046753A1 (en) * | 1997-03-25 | 2001-11-29 | Fernando Gonzalez | Method for forming a self-aligned isolation trench |
| CN1826695A (zh) * | 2003-07-22 | 2006-08-30 | 英特尔公司 | 具有带有圆形转角边缘部分的芯片的电子部件以及制作该部件的方法 |
| TWI389287B (zh) * | 2004-05-26 | 2013-03-11 | 飛利浦露明光學公司 | 具有用於靜電放電保護之積體快速切換二極體之發光二極體晶片 |
| JP3117281U (ja) * | 2005-09-30 | 2006-01-05 | 鼎元光電科技股▲ふん▼有限公司 | 効率の高いマトリックス発光ダイオード素子 |
| CN101075656A (zh) * | 2006-05-16 | 2007-11-21 | 三星电机株式会社 | 氮化物基半导体发光二极管 |
| CN101601135A (zh) * | 2007-01-22 | 2009-12-09 | 科锐Led照明科技公司 | 使用发光器件外部互连阵列的照明装置以及其制造方法 |
| US20090152683A1 (en) * | 2007-12-18 | 2009-06-18 | National Semiconductor Corporation | Rounded die configuration for stress minimization and enhanced thermo-mechanical reliability |
| CN101582474A (zh) * | 2008-05-15 | 2009-11-18 | 艾比维利股份有限公司 | 半导体发光器件 |
| CN103022024A (zh) * | 2008-05-23 | 2013-04-03 | 克利公司 | 固态照明部件 |
| TW201007975A (en) * | 2008-08-05 | 2010-02-16 | Helio Optoelectronics Corp | Structure of AC light-emitting diode dies |
| US20100109030A1 (en) * | 2008-11-06 | 2010-05-06 | Koninklijke Philips Electronics N.V. | Series connected flip chip leds with growth substrate removed |
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106206550B (zh) | 发光二极管元件 | |
| CN102067724B (zh) | 适合于交流驱动的发光器件 | |
| US8129726B2 (en) | Light-emitting diode package having electrostatic discharge protection function and method of fabricating the same | |
| CN105570691B (zh) | 发光二极体照明装置 | |
| TW202303567A (zh) | 分段式oled | |
| TWI776082B (zh) | 具有靜電防護功能的發光模組 | |
| US20240392954A1 (en) | Light emitting apparatus and light emitting module including the same | |
| EP4462482A1 (en) | Light emitting apparatus | |
| CN106158841B (zh) | 发光二极体照明装置 | |
| CN112201672A (zh) | 一种提高led反向抗静电冲击能力的结构及led芯片 | |
| JP2020113666A (ja) | 発光装置 | |
| CN105576102A (zh) | 发光二极体照明装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |