CN1826695A - 具有带有圆形转角边缘部分的芯片的电子部件以及制作该部件的方法 - Google Patents
具有带有圆形转角边缘部分的芯片的电子部件以及制作该部件的方法 Download PDFInfo
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Abstract
本发明提供一种包括承载底板(36)、芯片(20)、以及固化的填充材料(38)的电子部件。承载底板(36)具有上表面。芯片(20)具有芯片底板和形成在该芯片底板的一侧上的集成电路(20)。芯片(20)具有下主表面正对上平面、上主表面、以及从上主表面至下主表面具有多个侧边缘表面(26),在两个侧边缘表面的延伸相连的转角边缘部分被清除。固化的填充材料(38)位于承载底板(36)的上平面和芯片(20)的下表面之间并与之接触。
Description
技术领域
本发明一般涉及一种具有带有芯片的电子部件,该芯片上形成集成电路,更具体地,涉及避免由于芯片、芯片下的填充材料、以及封装底板的热膨胀系数的差异导致的电子部件破裂。
背景技术
集成电路以行和列的形式构成在半导体晶片上,通过操纵锯刃沿着集成电路间x和y方向上的划分道,将它们依次“分离”或“切割”。得到的芯片具有导电互连构件,该构件可放置在封装底板的触点上,并被焊接在该触点上。
封装底板通常具有比芯片大的热膨胀系数(CTE),这在电子部件加热和冷却时在互连构件上产生应力。环氧填充材料通常被涂敷于封装底板上,通过毛细作用流入封装底板和芯片间的空间,然后以高温固化。互连构件上的应力被重新分布到固化的填充材料上。
填充材料通常具有比底板更高的CTE,这在填充材料固化之后部件冷却时在芯片的某些区域产生应力。这些应力在芯片的转角边缘部分(侧边缘表面连接处)尤其高,并可能导致在芯片、填充材料、或者在靠近芯片的转角边缘部分的封装底板上的破裂。
附图说明
通过参照附图来举例描述本发明,其中
图1是半导体晶片的平面图,在其上形成多个集成电路。
图2是安装在一支持层上的一部分半导体晶片的截面图。
图3是晶片被分割成单个的芯片后的晶片的平面图。
图4是类似于图2的视图,显示了锯刃正穿过晶片。
图5是类似于图4的视图,进一步显示了用于清除芯片的某些部分的激光器。
图6是显示了一块芯片被清除了转角部分的区域的放大的平面图。
图7是包含一个芯片的电子部件的俯视图。
图8是沿图7中的8-8的电子部件的侧截面图。
图9是沿图7中9-9的截面图。
具体实施方式
附图图1和图2显示了附着在支持层12上的半导体晶片10,为了锯割晶片10该支持层通常用Mylar制成。通常可以理解,晶片10有多个相同的电路14,以行和列的方式复制在晶片的圆形区域上。划分道16是在x和y方向上被限定在电路14之间的。相应的矩形保护环(未示出)包围着每个相应的电路14。
如图3和4所示,锯的刃18被操纵穿过晶片(图1中的10)使得晶片被分割成独立的芯片20。刃18并不意图切穿支持层12,但可能切到它一部分。芯片20附着在支持层12上,且支持层12保持芯片20在图1中它们的最初位置。刃18被操纵穿过划分道(图1中的16)且在保护环之间使得电路14受到保护环的保护。每个芯片20包括各自的电路14。
图5显示了芯片20的进一步处理,其中激光器22被用于清除芯片20的某些部分。激光器22较佳的是受激准分子(Excimer)激光器,因为Excimer激光束不会向其切除的物件传递热量。激光器22位于芯片20之上,而激光束23由激光器22操纵射在一个芯片20上。由于可能产生更大的容积,对过抛光和研磨用激光器是较好的。为了更严密的控制尺寸公差,对过蚀刻用激光器也是较好的。
图6显示了在转角部分24被图5中的激光器22清除以后的一部分芯片20。在转角部分24的清除前,芯片20具有两个侧边缘表面26,两表面直角交于转角28。在转角部分28被清除之后,芯片20有一个圆形表面30连接侧边缘26的剩余部分。因此转角部分24由圆形表面30和侧边缘表面26的延伸32作为边界。
圆形表面30可具有半径(R)在50μm和1000μm之间。转角边缘部分24相应地具有面积在537μm2和860000μm2之间。提供这一范围的目的仅仅是为了区分出在尖锐的,甚至像刀一样的边缘上发现的微小的半径。
参照图3,从一个芯片20上清除转角边缘部分的过程被重复在矩形芯片20的所有四个角的每一个上。由此可见,转角边缘部分的清除是在芯片20被分割之后,而在芯片20从支持层12上移除之前通过对转角边缘部分的清除自动进行的。
图7和8显示了包括封装底板36、一块芯片20、以及填充材料38的电子部件34。封装底板36包括承载底板40以及形成在承载底板40的上表面的多个触点42。芯片20还具有多个触垫44和多个导电焊接球互连构件46,各自附着在相应的触垫44上。
芯片20被放置在封装底板36上使得每个互连构件46在相应的触点42之上。触点42以行和列形成一个阵列,且互连构件46具有与触点42的图形相配的图形。接着把整个部件,包括填充材料38,放在回流炉(reflowoven)中加热使得互连构件46熔化,接着再让其冷却。互连构件46就这样被焊接并固定至触点42上。
填充材料38是环氧树脂,以液态形式涂敷到芯片20周围的封装底板36上。毛细力将液态填充材料38吸入承载底板40的上表面和芯片的下表面之间的、互连构件46间的空间。芯片20和承载底板40之间的整个空间用液态填充材料38完全填满,且一些填充材料38还形成在芯片20的侧边缘表面26上。
如图9所示,圆形表面30形成于芯片20的整个厚度50中。芯片20通常具有约750μm的厚度,则圆形表面30也具有750μm的厚度。填充材料38还形成于圆形表面30的更低部分。
接着把图7、8和9所示的整个部件放在一炉中并加热至足以使填充材料38固化的温度。固化使填充材料38凝固。接着使部件34冷却。填充材料38具有16至50ppm/℃之间的CTE,芯片20具有约4ppm/℃的CTE,而封装底板36具有约20ppm/℃的CTE。当电子部件34在填充材料38固化之后被冷却时,热膨胀系数的差异在芯片20上产生应力。这些应力在尖锐边缘处尤其高。通过清除转角边缘部分24,这些应力被减小。圆形的转角(与例如有小面的转角相反)对于减小应力是格外有效的。拱形转角甚至比圆柱形转角更能有效地减小应力,但可能较难制造。通过减小应力,在侧边缘表面相接的区域中可以避免电子部件的任何部分发生破裂。
虽然描述并在附图中显示了某个示例性的实施例,但可以理解的是这种实施例仅仅是示例性的且不会对本发明产生限制,并且本发明并不局限于说明书所显示和描述的结构和布局,因为本领域的技术人员可想到各种其它修改。
Claims (20)
1.一种电子部件,包括:
具有上平面的承载底板;
具有芯片底板的芯片,在该芯片底板的一侧上形成集成电路,所述芯片具有下主表面正对所述承载底板的上平面、上主表面、以及从上主表面至下主表面具有多个侧边缘表面,在两个侧边缘表面的延伸相连的转角边缘部分被清除;以及
在承载底板的上平面和芯片的下表面之间并与之接触的固化的填充材料。
2.如权利要求1所述的电子部件,其特征在于,所述转角边缘部分具有面积在537μm2和860000μm2之间。
3.如权利要求1所述的电子部件,其特征在于,所述芯片在转角边缘部分是圆形的。
4.如权利要求3所述的电子部件,其特征在于,所述芯片在转角边缘部分具有半径在50μm和1000μm之间。
5.如权利要求3所述的电子部件,其特征在于,从所述上表面到下主表面芯片在整个厚度上是圆形的。
6.如权利要求1所述的电子部件,其特征在于,所述填充材料具有与底板不同的热膨胀系数,CTE。
7.如权利要求1所述的电子部件,进一步包括:
在所述承载底板和所述芯片之间的多个导电互连构件,将承载底板电气连接到芯片,所述填充材料分布在导电互连构件之间。
8.一种电子组件,包括:
具有芯片底板的芯片,在该芯片底板的上形成集成电路,所述芯片具有上和下主表面、以及从上主表面至下主表面具有多个侧边缘表面,在两个侧边缘表面的延伸相连的转角边缘部分被清除。
9.如权利要求8所述的电子组件,其特征在于,所述转角边缘部分具有面积在537μm2和860000μm2之间。
10.如权利要求8所述的电子组件,其特征在于,所述芯片在转角边缘部分是圆形的。
11.如权利要求10所述的电子部件,其特征在于,所述芯片在转角边缘部分具有半径在50μm和1000μm之间。
12.如权利要求10所述的电子组件,其特征在于,芯片从上到下主表面在整个厚度上是圆形的。
13.如权利要求8所述的电子组件,进一步包括:
集成电路的芯片的一侧上的多个导电互连构件。
14.如权利要求13所述的电子组件,其特征在于,所述导电互连构件是焊球。
15.一种制造微电子芯片的方法,包括:
将在其上形成有多个集成电路的晶片底板分割成多个芯片,每个芯片包括各自相应的集成电路,且每个芯片具有相对的主表面以及多个连接着主表面的侧边缘表面;以及
在每个芯片的两个侧边缘表面相连处清除转角边缘部分。
16.如权利要求15所述的方法,其特征在于,所述部分是在芯片被分割后清除的。
17.如权利要求15所述的方法,其特征在于,所述部分是用受激准分子激光器,即Excimer激光器清除的。
18.一种构造电子部件的方法,包括:
通过在芯片的一个主表面和承载底板的平面之间并将其连接的填充材料,将芯片装配在承载底板上,该芯片具有芯片底板和形成于该芯片底板之上的集成电路;
加热所述填充材料使填充材料凝固;以及
使填充材料冷却,所述芯片具有从其一个主表面至相对的主表面的侧边缘表面,两个侧边缘表面相连的转角部分被清除以减小应力,该应力会由于芯片和填充材料的热膨胀系数的差异而使芯片破裂。
19.如权利要求18所述的方法,进一步包括:
将在其上形成有多个集成电路的晶片底板分割成多个芯片,每个芯片包括各自相应的集成电路,且每个芯片具有相对的主表面以及多个连接着主表面的侧边缘表面;以及
在每个芯片的两个侧边缘表面相连处清除转角边缘部分,芯片中的一个就是被安装的芯片。
20.如权利要求19所述的方法,其特征在于,所述部分是用Excimer的激光束清除的。
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US10/625,109 US20050017371A1 (en) | 2003-07-22 | 2003-07-22 | Electronic assembly having a die with rounded corner edge portions and a method of fabricating the same |
US10/625,109 | 2003-07-22 |
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CN1826695A true CN1826695A (zh) | 2006-08-30 |
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US (1) | US20050017371A1 (zh) |
CN (1) | CN1826695A (zh) |
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CN106206550A (zh) * | 2010-08-30 | 2016-12-07 | 晶元光电股份有限公司 | 发光二极管元件 |
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ES2445647T3 (es) | 2007-02-06 | 2014-03-04 | Nokia Corporation | Soporte de llamadas sin UICC |
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US4835592A (en) * | 1986-03-05 | 1989-05-30 | Ixys Corporation | Semiconductor wafer with dice having briding metal structure and method of manufacturing same |
JP2687661B2 (ja) * | 1990-03-26 | 1997-12-08 | 三菱電機株式会社 | Icカードの製造方法 |
US5214261A (en) * | 1990-09-10 | 1993-05-25 | Rockwell International Corporation | Method and apparatus for dicing semiconductor substrates using an excimer laser beam |
JPH0929472A (ja) * | 1995-07-14 | 1997-02-04 | Hitachi Ltd | 割断方法、割断装置及びチップ材料 |
JP2992873B2 (ja) * | 1995-12-26 | 1999-12-20 | サンケン電気株式会社 | 半導体装置 |
FR2750233A1 (fr) * | 1996-06-20 | 1997-12-26 | Solaic Sa | Carte a circuit integre |
JPH1041438A (ja) * | 1996-07-22 | 1998-02-13 | Fujitsu Ten Ltd | 半導体素子の構造及び半導体素子の封止構造並びに半導体素子の封止装置 |
US6448153B2 (en) * | 1996-10-29 | 2002-09-10 | Tru-Si Technologies, Inc. | Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners |
JPH11186326A (ja) * | 1997-12-24 | 1999-07-09 | Shinko Electric Ind Co Ltd | 半導体装置 |
US6731012B1 (en) * | 1999-12-23 | 2004-05-04 | International Business Machines Corporation | Non-planar surface for semiconductor chips |
DE10107149A1 (de) * | 2001-02-15 | 2002-09-12 | Infineon Technologies Ag | Verfahren zum Bearbeiten eines Halbleiterchips |
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CN106206550A (zh) * | 2010-08-30 | 2016-12-07 | 晶元光电股份有限公司 | 发光二极管元件 |
CN106206550B (zh) * | 2010-08-30 | 2019-01-15 | 晶元光电股份有限公司 | 发光二极管元件 |
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WO2005010993A1 (en) | 2005-02-03 |
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US20050017371A1 (en) | 2005-01-27 |
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