TWI611553B - 發光二極體元件 - Google Patents

發光二極體元件 Download PDF

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Publication number
TWI611553B
TWI611553B TW106106006A TW106106006A TWI611553B TW I611553 B TWI611553 B TW I611553B TW 106106006 A TW106106006 A TW 106106006A TW 106106006 A TW106106006 A TW 106106006A TW I611553 B TWI611553 B TW I611553B
Authority
TW
Taiwan
Prior art keywords
emitting diode
light
diode unit
unit
units
Prior art date
Application number
TW106106006A
Other languages
English (en)
Chinese (zh)
Other versions
TW201717352A (zh
Inventor
Chao Hsing Chen
陳昭興
Chien Fu Shen
沈建賦
Tsun Kai Ko
柯淙凱
Schang Jing Hon
洪詳竣
Original Assignee
Epistar Corporation
晶元光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corporation, 晶元光電股份有限公司 filed Critical Epistar Corporation
Publication of TW201717352A publication Critical patent/TW201717352A/zh
Application granted granted Critical
Publication of TWI611553B publication Critical patent/TWI611553B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/50—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
TW106106006A 2010-08-30 2011-08-26 發光二極體元件 TWI611553B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37819110P 2010-08-30 2010-08-30
US61/378,191 2010-08-30

Publications (2)

Publication Number Publication Date
TW201717352A TW201717352A (zh) 2017-05-16
TWI611553B true TWI611553B (zh) 2018-01-11

Family

ID=45695949

Family Applications (5)

Application Number Title Priority Date Filing Date
TW106106006A TWI611553B (zh) 2010-08-30 2011-08-26 發光二極體元件
TW108114767A TWI702707B (zh) 2010-08-30 2011-08-26 發光二極體元件
TW100130849A TWI533432B (zh) 2010-08-30 2011-08-26 發光二極體元件
TW106141275A TWI662681B (zh) 2010-08-30 2011-08-26 發光二極體元件
TW105108555A TWI578489B (zh) 2010-08-30 2011-08-26 發光二極體元件

Family Applications After (4)

Application Number Title Priority Date Filing Date
TW108114767A TWI702707B (zh) 2010-08-30 2011-08-26 發光二極體元件
TW100130849A TWI533432B (zh) 2010-08-30 2011-08-26 發光二極體元件
TW106141275A TWI662681B (zh) 2010-08-30 2011-08-26 發光二極體元件
TW105108555A TWI578489B (zh) 2010-08-30 2011-08-26 發光二極體元件

Country Status (6)

Country Link
US (4) US9171883B2 (enExample)
JP (4) JP5917859B2 (enExample)
KR (6) KR101616094B1 (enExample)
CN (2) CN106206550B (enExample)
DE (2) DE102011053093B4 (enExample)
TW (5) TWI611553B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9171883B2 (en) * 2010-08-30 2015-10-27 Epistar Corporation Light emitting device
CN102593284B (zh) * 2012-03-05 2014-06-18 映瑞光电科技(上海)有限公司 隔离深沟槽及其高压led芯片的制造方法
TWI549278B (zh) * 2012-03-12 2016-09-11 晶元光電股份有限公司 發光二極體元件
CN105977369A (zh) * 2016-05-26 2016-09-28 合肥彩虹蓝光科技有限公司 一种小电流高光效hv-led芯片
JP2019072140A (ja) * 2017-10-13 2019-05-16 サミー株式会社 回胴式遊技機
JP2019072137A (ja) * 2017-10-13 2019-05-16 サミー株式会社 回胴式遊技機
CN109950280B (zh) * 2019-02-26 2021-02-12 云谷（固安）科技有限公司 具有静电防护结构的装置及其制备方法
JP7217688B2 (ja) * 2019-09-26 2023-02-03 三菱電機株式会社 半導体装置、及び半導体素子の製造方法
US12015105B2 (en) 2020-01-16 2024-06-18 Rochester Institute Of Technology Capacitive control of electrostatic field effect optoelectronic device
CN112687780B (zh) * 2020-12-29 2022-02-11 厦门三安光电有限公司 一种高压发光二极管芯片
US12707765B2 (en) * 2021-07-12 2026-08-11 Xiamen San'an Optoelectronics Co., Ltd. Light emitting diode device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW540163B (en) * 2000-10-16 2003-07-01 Osram Opto Semiconductors Gmbh LED-module and multiple arrangement
US20080179602A1 (en) * 2007-01-22 2008-07-31 Led Lighting Fixtures, Inc. Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
TW201007975A (en) * 2008-08-05 2010-02-16 Helio Optoelectronics Corp Structure of AC light-emitting diode dies

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4538342A (en) * 1984-06-15 1985-09-03 At&T Bell Laboratories Forming platinum contacts to in-based group III-V compound devices
US6097076A (en) * 1997-03-25 2000-08-01 Micron Technology, Inc. Self-aligned isolation trench
US5789768A (en) * 1997-06-23 1998-08-04 Epistar Corporation Light emitting diode having transparent conductive oxide formed on the contact layer
JP2002026384A (ja) * 2000-07-05 2002-01-25 Nichia Chem Ind Ltd 集積型窒化物半導体発光素子
JP2002118288A (ja) * 2000-10-12 2002-04-19 Tokai Rika Co Ltd 半導体光デバイス
US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
JP3822545B2 (ja) * 2002-04-12 2006-09-20 士郎 酒井 発光装置
EP2290715B1 (en) * 2002-08-01 2019-01-23 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
JP3912219B2 (ja) * 2002-08-01 2007-05-09 日亜化学工業株式会社 窒化物半導体発光素子
US20050017371A1 (en) * 2003-07-22 2005-01-27 Zhiyong Wang Electronic assembly having a die with rounded corner edge portions and a method of fabricating the same
JP4273928B2 (ja) 2003-10-30 2009-06-03 豊田合成株式会社 Ｉｉｉ−ｖ族窒化物半導体素子
KR100576856B1 (ko) 2003-12-23 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
US7615798B2 (en) * 2004-03-29 2009-11-10 Nichia Corporation Semiconductor light emitting device having an electrode made of a conductive oxide
US7064353B2 (en) * 2004-05-26 2006-06-20 Philips Lumileds Lighting Company, Llc LED chip with integrated fast switching diode for ESD protection
US7566908B2 (en) * 2004-11-29 2009-07-28 Yongsheng Zhao Gan-based and ZnO-based LED
US7821023B2 (en) 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
EP2259318A3 (en) * 2005-02-04 2014-01-08 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and method of fabricating the same
JP2006228855A (ja) 2005-02-16 2006-08-31 Rohm Co Ltd 半導体発光素子およびその製法
JP3117281U (ja) 2005-09-30 2006-01-05 鼎元光電科技股▲ふん▼有限公司 効率の高いマトリックス発光ダイオード素子
JP2008047850A (ja) * 2006-07-19 2008-02-28 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード素子
KR20070111091A (ko) * 2006-05-16 2007-11-21 삼성전기주식회사 질화물계 반도체 발광다이오드
KR101273177B1 (ko) 2006-10-19 2013-06-14 엘지이노텍 주식회사 반도체 발광소자 및 그 제조 방법
EP3848970A1 (en) * 2007-01-22 2021-07-14 Cree, Inc. Multiple light emitting diode emitter
KR101239853B1 (ko) * 2007-03-13 2013-03-06 서울옵토디바이스주식회사 교류용 발광 다이오드
JP2008270616A (ja) 2007-04-23 2008-11-06 Rohm Co Ltd 半導体発光装置の製造方法および半導体発光装置
DE102008005935A1 (de) * 2007-11-29 2009-06-04 Osram Opto Semiconductors Gmbh Halbleiteranordnung sowie Verfahren zur Herstellung einer Halbleiteranordnung
US20090152683A1 (en) * 2007-12-18 2009-06-18 National Semiconductor Corporation Rounded die configuration for stress minimization and enhanced thermo-mechanical reliability
JP2009238893A (ja) 2008-03-26 2009-10-15 Oki Data Corp 半導体装置、光プリントヘッドおよび画像形成装置
JP5229034B2 (ja) * 2008-03-28 2013-07-03 サンケン電気株式会社 発光装置
KR100988041B1 (ko) 2008-05-15 2010-10-18 주식회사 에피밸리 반도체 발광소자
US8823179B2 (en) * 2008-05-21 2014-09-02 Chia-Lun Tsai Electronic device package and method for fabricating the same
JP2009302314A (ja) * 2008-06-13 2009-12-24 Rohm Co Ltd ＧａＮ系半導体装置
JP5305790B2 (ja) * 2008-08-28 2013-10-02 株式会社東芝 半導体発光素子
WO2010050694A2 (ko) * 2008-10-29 2010-05-06 서울옵토디바이스주식회사 발광 다이오드
US8062916B2 (en) 2008-11-06 2011-11-22 Koninklijke Philips Electronics N.V. Series connected flip chip LEDs with growth substrate removed
TWI466266B (zh) * 2009-02-24 2014-12-21 晶元光電股份有限公司 陣列式發光元件及其裝置
JP5352857B2 (ja) * 2009-03-31 2013-11-27 旭化成エレクトロニクス株式会社 光デバイス
KR101706915B1 (ko) * 2009-05-12 2017-02-15 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 변형가능 및 반투과 디스플레이를 위한 초박형, 미세구조 무기발광다이오드의 인쇄 어셈블리
US8400064B2 (en) * 2009-09-09 2013-03-19 Koninklijke Philips Electronics N.V. Zener diode protection network in submount for LEDs connected in series
TWM379173U (en) * 2009-12-07 2010-04-21 Universal Optoelectronics Co Ltd Cascaded light-emitting diode device
US9171883B2 (en) * 2010-08-30 2015-10-27 Epistar Corporation Light emitting device
JP2013222269A (ja) 2012-04-13 2013-10-28 Fujitsu Frontech Ltd 見舞管理システム、その検索サーバ、プログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW540163B (en) * 2000-10-16 2003-07-01 Osram Opto Semiconductors Gmbh LED-module and multiple arrangement
US20080179602A1 (en) * 2007-01-22 2008-07-31 Led Lighting Fixtures, Inc. Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
TW201007975A (en) * 2008-08-05 2010-02-16 Helio Optoelectronics Corp Structure of AC light-emitting diode dies

Also Published As

Publication number Publication date
JP2017199927A (ja) 2017-11-02
TW201810597A (zh) 2018-03-16
TWI702707B (zh) 2020-08-21
JP2020205454A (ja) 2020-12-24
KR20170058904A (ko) 2017-05-29
US8823022B2 (en) 2014-09-02
JP5917859B2 (ja) 2016-05-18
JP7186754B2 (ja) 2022-12-09
KR102312627B1 (ko) 2021-10-14
DE102011123130B4 (de) 2025-02-27
US20180151516A1 (en) 2018-05-31
DE102011053093B4 (de) 2021-12-30
JP6174731B2 (ja) 2017-08-02
US9171883B2 (en) 2015-10-27
KR20180129746A (ko) 2018-12-05
CN106206550A (zh) 2016-12-07
TW201209984A (en) 2012-03-01
KR20200128499A (ko) 2020-11-13
KR20190102168A (ko) 2019-09-03
US9893024B2 (en) 2018-02-13
TWI578489B (zh) 2017-04-11
CN102386175B (zh) 2016-08-17
TW201931563A (zh) 2019-08-01
CN102386175A (zh) 2012-03-21
US20120049208A1 (en) 2012-03-01
JP6772109B2 (ja) 2020-10-21
KR101925527B1 (ko) 2018-12-05
KR101616094B1 (ko) 2016-04-27
KR101741130B1 (ko) 2017-05-29
TW201717352A (zh) 2017-05-16
US10546824B2 (en) 2020-01-28
US20120049209A1 (en) 2012-03-01
JP2016122849A (ja) 2016-07-07
DE102011053093A1 (de) 2012-04-12
KR102017859B1 (ko) 2019-09-03
CN106206550B (zh) 2019-01-15
KR20120021221A (ko) 2012-03-08
TWI662681B (zh) 2019-06-11
KR102176761B1 (ko) 2020-11-10
TW201622097A (zh) 2016-06-16
JP2012049545A (ja) 2012-03-08
TWI533432B (zh) 2016-05-11
KR20160051702A (ko) 2016-05-11
US20160027745A1 (en) 2016-01-28

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