JP2015119136A5 - - Google Patents

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JP2015119136A5
JP2015119136A5 JP2013263457A JP2013263457A JP2015119136A5 JP 2015119136 A5 JP2015119136 A5 JP 2015119136A5 JP 2013263457 A JP2013263457 A JP 2013263457A JP 2013263457 A JP2013263457 A JP 2013263457A JP 2015119136 A5 JP2015119136 A5 JP 2015119136A5
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JP2013263457A
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JP2015119136A (ja
JP6323649B2 (ja
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Priority claimed from JP2013263457A external-priority patent/JP6323649B2/ja
Priority to CN201410798595.XA priority patent/CN104734014B/zh
Priority to US14/576,755 priority patent/US9337621B2/en
Publication of JP2015119136A publication Critical patent/JP2015119136A/ja
Priority to US15/093,990 priority patent/US9748739B2/en
Publication of JP2015119136A5 publication Critical patent/JP2015119136A5/ja
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JP2013263457A 2013-12-20 2013-12-20 面発光レーザーおよび原子発振器 Active JP6323649B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013263457A JP6323649B2 (ja) 2013-12-20 2013-12-20 面発光レーザーおよび原子発振器
CN201410798595.XA CN104734014B (zh) 2013-12-20 2014-12-18 面发光激光器以及原子振荡器
US14/576,755 US9337621B2 (en) 2013-12-20 2014-12-19 Vertical cavity surface emitting laser and atomic oscillator
US15/093,990 US9748739B2 (en) 2013-12-20 2016-04-08 Vertical cavity surface emitting laser and atomic oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013263457A JP6323649B2 (ja) 2013-12-20 2013-12-20 面発光レーザーおよび原子発振器

Publications (3)

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JP2015119136A JP2015119136A (ja) 2015-06-25
JP2015119136A5 true JP2015119136A5 (enExample) 2017-02-09
JP6323649B2 JP6323649B2 (ja) 2018-05-16

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JP2013263457A Active JP6323649B2 (ja) 2013-12-20 2013-12-20 面発光レーザーおよび原子発振器

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US (2) US9337621B2 (enExample)
JP (1) JP6323649B2 (enExample)
CN (1) CN104734014B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2015019471A1 (ja) * 2013-08-08 2017-03-02 株式会社日立製作所 磁場計測装置
JP6299955B2 (ja) * 2013-12-20 2018-03-28 セイコーエプソン株式会社 面発光レーザーおよび原子発振器
JP6323649B2 (ja) * 2013-12-20 2018-05-16 セイコーエプソン株式会社 面発光レーザーおよび原子発振器
JP6274404B2 (ja) * 2013-12-20 2018-02-07 セイコーエプソン株式会社 面発光レーザーおよび原子発振器
JP6620453B2 (ja) * 2015-08-06 2019-12-18 株式会社リコー 面発光レーザ素子及び原子発振器
JP6705151B2 (ja) * 2015-10-27 2020-06-03 セイコーエプソン株式会社 原子発振器
JP6786961B2 (ja) 2016-08-29 2020-11-18 セイコーエプソン株式会社 面発光レーザーおよび原子発振器
KR102160030B1 (ko) * 2019-01-17 2020-09-28 상하이 아스코어 테크놀로지 컴퍼니 리미티드 레이저 소자
JP2020167214A (ja) 2019-03-28 2020-10-08 セイコーエプソン株式会社 半導体レーザーおよび原子発振器
JP2020167213A (ja) 2019-03-28 2020-10-08 セイコーエプソン株式会社 半導体レーザーおよび原子発振器
US11165222B2 (en) 2019-05-06 2021-11-02 Mellanox Technologies, Ltd. Optically matched vertical-cavity surface-emitting laser (VCSEL) with passivation
US11362486B2 (en) * 2019-05-06 2022-06-14 Mellanox Technologies, Ltd. High speed high bandwidth vertical-cavity surface-emitting laser with controlled overshoot
US11099393B2 (en) * 2019-11-22 2021-08-24 Facebook Technologies, Llc Surface emitting light source with lateral variant refractive index profile
US11749964B2 (en) 2020-06-24 2023-09-05 Meta Platforms Technologies, Llc Monolithic light source with integrated optics based on nonlinear frequency conversion

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10353951A1 (de) 2003-11-18 2005-06-16 U-L-M Photonics Gmbh Polarisationskontrolle von Vertikaldiodenlasern durch ein monolothisch integriertes Oberflächengitter
US6014400A (en) * 1996-09-02 2000-01-11 Matsushita Electric Industrial Co., Ltd Surface-emitting laser and a fabrication method thereof
JP3482824B2 (ja) * 1997-07-29 2004-01-06 セイコーエプソン株式会社 面発光型半導体レーザおよび面発光型半導体レーザアレイ
US6570905B1 (en) * 2000-11-02 2003-05-27 U-L-M Photonics Gmbh Vertical cavity surface emitting laser with reduced parasitic capacitance
JP2003008142A (ja) * 2001-06-26 2003-01-10 Furukawa Electric Co Ltd:The 面発光型半導体レーザ素子
US20050169336A1 (en) * 2004-02-04 2005-08-04 Fuji Xerox Co., Ltd. Vertical-cavity surface-emitting semiconductor laser
JP4815812B2 (ja) * 2004-02-04 2011-11-16 富士ゼロックス株式会社 垂直共振器型面発光半導体レーザ装置
JP4232034B2 (ja) * 2004-07-01 2009-03-04 セイコーエプソン株式会社 面発光型半導体レーザの製造方法
JP4568125B2 (ja) * 2005-01-17 2010-10-27 株式会社東芝 面発光型半導体素子
US7916768B2 (en) * 2008-03-24 2011-03-29 The Regents Of The University Of California Small dimension high-efficiency high-speed vertical-cavity surface-emitting lasers
JP5699467B2 (ja) * 2010-07-14 2015-04-08 セイコーエプソン株式会社 光学モジュールおよび原子発振器
JP5796454B2 (ja) * 2011-10-28 2015-10-21 セイコーエプソン株式会社 原子発振器
JP6107089B2 (ja) * 2012-11-30 2017-04-05 株式会社リコー 面発光レーザ素子及び原子発振器
JP6323649B2 (ja) * 2013-12-20 2018-05-16 セイコーエプソン株式会社 面発光レーザーおよび原子発振器

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