JP2004253811A5 - - Google Patents
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- Publication number
- JP2004253811A5 JP2004253811A5 JP2004065496A JP2004065496A JP2004253811A5 JP 2004253811 A5 JP2004253811 A5 JP 2004253811A5 JP 2004065496 A JP2004065496 A JP 2004065496A JP 2004065496 A JP2004065496 A JP 2004065496A JP 2004253811 A5 JP2004253811 A5 JP 2004253811A5
- Authority
- JP
- Japan
- Prior art keywords
- emitting element
- semiconductor light
- light emitting
- element according
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 31
- 239000004038 photonic crystal Substances 0.000 claims 8
- 230000006798 recombination Effects 0.000 claims 4
- 238000005215 recombination Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 238000005253 cladding Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004065496A JP4445292B2 (ja) | 2002-02-08 | 2004-03-09 | 半導体発光素子 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002032073 | 2002-02-08 | ||
| JP2004065496A JP4445292B2 (ja) | 2002-02-08 | 2004-03-09 | 半導体発光素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003566952A Division JP3613348B2 (ja) | 2002-02-08 | 2003-02-07 | 半導体発光素子およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004253811A JP2004253811A (ja) | 2004-09-09 |
| JP2004253811A5 true JP2004253811A5 (enExample) | 2005-11-24 |
| JP4445292B2 JP4445292B2 (ja) | 2010-04-07 |
Family
ID=33031653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004065496A Expired - Fee Related JP4445292B2 (ja) | 2002-02-08 | 2004-03-09 | 半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4445292B2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7582910B2 (en) * | 2005-02-28 | 2009-09-01 | The Regents Of The University Of California | High efficiency light emitting diode (LED) with optimized photonic crystal extractor |
| JP5224154B2 (ja) * | 2005-10-28 | 2013-07-03 | 日亜化学工業株式会社 | 半導体素子 |
| CN101641847B (zh) | 2007-03-23 | 2012-04-04 | 住友电气工业株式会社 | 光子晶体激光器及其制造方法 |
| KR101341374B1 (ko) | 2007-07-30 | 2013-12-16 | 삼성전자주식회사 | 광자결정 발광소자 및 그 제조방법 |
| JP5356088B2 (ja) * | 2009-03-27 | 2013-12-04 | 古河電気工業株式会社 | 半導体レーザ、レーザ光の発生方法、およびレーザ光のスペクトル線幅の狭窄化方法 |
| JP5627361B2 (ja) | 2010-09-16 | 2014-11-19 | キヤノン株式会社 | 2次元フォトニック結晶面発光レーザ |
| JP6333804B2 (ja) | 2013-03-07 | 2018-05-30 | 浜松ホトニクス株式会社 | レーザ素子及びレーザ装置 |
| US9614352B2 (en) | 2013-03-07 | 2017-04-04 | Hamamatsu Photonics K.K. | Laser element and laser device |
| JP6309947B2 (ja) * | 2013-04-26 | 2018-04-11 | 浜松ホトニクス株式会社 | 半導体レーザ装置 |
| JP6401701B2 (ja) * | 2013-07-16 | 2018-10-10 | 浜松ホトニクス株式会社 | 半導体レーザ装置 |
| GB201607996D0 (en) * | 2016-05-06 | 2016-06-22 | Univ Glasgow | Laser device and method for its operation |
| JP7097567B2 (ja) * | 2018-02-28 | 2022-07-08 | セイコーエプソン株式会社 | 発光装置およびその製造方法、ならびにプロジェクター |
| DE112021000652T5 (de) * | 2020-01-20 | 2022-11-24 | Hamamatsu Photonics K.K. | Lichtquellenmodul |
| JP6891327B1 (ja) * | 2020-09-25 | 2021-06-18 | 浜松ホトニクス株式会社 | 光源モジュール |
| EP4564619A1 (en) * | 2022-07-29 | 2025-06-04 | Sumitomo Electric Industries, Ltd. | Photonic crystal surface-emitting laser and method for manufacturing same |
-
2004
- 2004-03-09 JP JP2004065496A patent/JP4445292B2/ja not_active Expired - Fee Related
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