JP2004253811A5 - - Google Patents

Download PDF

Info

Publication number
JP2004253811A5
JP2004253811A5 JP2004065496A JP2004065496A JP2004253811A5 JP 2004253811 A5 JP2004253811 A5 JP 2004253811A5 JP 2004065496 A JP2004065496 A JP 2004065496A JP 2004065496 A JP2004065496 A JP 2004065496A JP 2004253811 A5 JP2004253811 A5 JP 2004253811A5
Authority
JP
Japan
Prior art keywords
emitting element
semiconductor light
light emitting
element according
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004065496A
Other languages
English (en)
Japanese (ja)
Other versions
JP4445292B2 (ja
JP2004253811A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004065496A priority Critical patent/JP4445292B2/ja
Priority claimed from JP2004065496A external-priority patent/JP4445292B2/ja
Publication of JP2004253811A publication Critical patent/JP2004253811A/ja
Publication of JP2004253811A5 publication Critical patent/JP2004253811A5/ja
Application granted granted Critical
Publication of JP4445292B2 publication Critical patent/JP4445292B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004065496A 2002-02-08 2004-03-09 半導体発光素子 Expired - Fee Related JP4445292B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004065496A JP4445292B2 (ja) 2002-02-08 2004-03-09 半導体発光素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002032073 2002-02-08
JP2004065496A JP4445292B2 (ja) 2002-02-08 2004-03-09 半導体発光素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2003566952A Division JP3613348B2 (ja) 2002-02-08 2003-02-07 半導体発光素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2004253811A JP2004253811A (ja) 2004-09-09
JP2004253811A5 true JP2004253811A5 (enExample) 2005-11-24
JP4445292B2 JP4445292B2 (ja) 2010-04-07

Family

ID=33031653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004065496A Expired - Fee Related JP4445292B2 (ja) 2002-02-08 2004-03-09 半導体発光素子

Country Status (1)

Country Link
JP (1) JP4445292B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7582910B2 (en) * 2005-02-28 2009-09-01 The Regents Of The University Of California High efficiency light emitting diode (LED) with optimized photonic crystal extractor
JP5224154B2 (ja) * 2005-10-28 2013-07-03 日亜化学工業株式会社 半導体素子
CN101641847B (zh) 2007-03-23 2012-04-04 住友电气工业株式会社 光子晶体激光器及其制造方法
KR101341374B1 (ko) 2007-07-30 2013-12-16 삼성전자주식회사 광자결정 발광소자 및 그 제조방법
JP5356088B2 (ja) * 2009-03-27 2013-12-04 古河電気工業株式会社 半導体レーザ、レーザ光の発生方法、およびレーザ光のスペクトル線幅の狭窄化方法
JP5627361B2 (ja) 2010-09-16 2014-11-19 キヤノン株式会社 2次元フォトニック結晶面発光レーザ
JP6333804B2 (ja) 2013-03-07 2018-05-30 浜松ホトニクス株式会社 レーザ素子及びレーザ装置
US9614352B2 (en) 2013-03-07 2017-04-04 Hamamatsu Photonics K.K. Laser element and laser device
JP6309947B2 (ja) * 2013-04-26 2018-04-11 浜松ホトニクス株式会社 半導体レーザ装置
JP6401701B2 (ja) * 2013-07-16 2018-10-10 浜松ホトニクス株式会社 半導体レーザ装置
GB201607996D0 (en) * 2016-05-06 2016-06-22 Univ Glasgow Laser device and method for its operation
JP7097567B2 (ja) * 2018-02-28 2022-07-08 セイコーエプソン株式会社 発光装置およびその製造方法、ならびにプロジェクター
DE112021000652T5 (de) * 2020-01-20 2022-11-24 Hamamatsu Photonics K.K. Lichtquellenmodul
JP6891327B1 (ja) * 2020-09-25 2021-06-18 浜松ホトニクス株式会社 光源モジュール
EP4564619A1 (en) * 2022-07-29 2025-06-04 Sumitomo Electric Industries, Ltd. Photonic crystal surface-emitting laser and method for manufacturing same

Similar Documents

Publication Publication Date Title
JP2004253811A5 (enExample)
KR101715843B1 (ko) 광추출 효율이 향상된 발광 소자
JP5808905B2 (ja) 有機発光素子、これを含む照明装置、およびこれを備える有機発光ディスプレイ装置
JP2011124301A5 (enExample)
JP2008205006A5 (enExample)
US20130277703A1 (en) Sheet and light-emitting device
EP1411603A4 (en) EMISSIONSLASER WITH TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE
CN101257077B (zh) 具有光子晶体高反射层的半导体发光二极管器件
ATE546869T1 (de) Oberflächenemissionslaser
KR20090111861A (ko) 박막 발광 다이오드칩 및 박막 발광 다이오드칩의 제조 방법
JP2011510512A5 (enExample)
JP2013157496A5 (enExample)
WO2016145787A1 (zh) 黑色矩阵、平面显示器及其制作方法
JP2005340625A5 (enExample)
JP2012190906A5 (enExample)
WO2013035299A1 (ja) 発光装置および光シート
JP2010147321A5 (enExample)
JP5216576B2 (ja) Led用の構造化基板
JP2008537291A5 (enExample)
JP2015090810A (ja) El表示装置、および、el表示装置の製造方法
JP2009238847A5 (enExample)
JP2011508441A5 (enExample)
JP2009238828A5 (enExample)
JP2007266575A5 (enExample)
JP2003110135A5 (enExample)