JP2008205006A5 - - Google Patents

Download PDF

Info

Publication number
JP2008205006A5
JP2008205006A5 JP2007036328A JP2007036328A JP2008205006A5 JP 2008205006 A5 JP2008205006 A5 JP 2008205006A5 JP 2007036328 A JP2007036328 A JP 2007036328A JP 2007036328 A JP2007036328 A JP 2007036328A JP 2008205006 A5 JP2008205006 A5 JP 2008205006A5
Authority
JP
Japan
Prior art keywords
light emitting
semiconductor
electrode
waveguide
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007036328A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008205006A (ja
JP4996938B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007036328A priority Critical patent/JP4996938B2/ja
Priority claimed from JP2007036328A external-priority patent/JP4996938B2/ja
Priority to US11/935,904 priority patent/US8030668B2/en
Priority to EP07021946A priority patent/EP1959504A3/en
Priority to KR1020070117564A priority patent/KR20080076694A/ko
Publication of JP2008205006A publication Critical patent/JP2008205006A/ja
Publication of JP2008205006A5 publication Critical patent/JP2008205006A5/ja
Application granted granted Critical
Publication of JP4996938B2 publication Critical patent/JP4996938B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007036328A 2007-02-16 2007-02-16 半導体発光素子 Expired - Fee Related JP4996938B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007036328A JP4996938B2 (ja) 2007-02-16 2007-02-16 半導体発光素子
US11/935,904 US8030668B2 (en) 2007-02-16 2007-11-06 Semiconductor LED, opto-electronic integrated circuits (OEIC), and method of fabricating OEIC
EP07021946A EP1959504A3 (en) 2007-02-16 2007-11-12 Semiconductor LED, opto-electronic integrated circuits (OEIC), and method of fabricating OEIC
KR1020070117564A KR20080076694A (ko) 2007-02-16 2007-11-16 반도체 발광 소자, 및 그것을 이용한 광전자 집적 회로, 및광전자 집적 회로의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007036328A JP4996938B2 (ja) 2007-02-16 2007-02-16 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2008205006A JP2008205006A (ja) 2008-09-04
JP2008205006A5 true JP2008205006A5 (enExample) 2009-09-10
JP4996938B2 JP4996938B2 (ja) 2012-08-08

Family

ID=39420503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007036328A Expired - Fee Related JP4996938B2 (ja) 2007-02-16 2007-02-16 半導体発光素子

Country Status (4)

Country Link
US (1) US8030668B2 (enExample)
EP (1) EP1959504A3 (enExample)
JP (1) JP4996938B2 (enExample)
KR (1) KR20080076694A (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5003013B2 (ja) * 2006-04-25 2012-08-15 株式会社日立製作所 シリコン発光ダイオード、シリコン光トランジスタ、シリコンレーザー及びそれらの製造方法。
JP5117156B2 (ja) * 2007-10-05 2013-01-09 株式会社日立製作所 半導体装置
FR2925728B1 (fr) * 2007-12-20 2010-01-01 Commissariat Energie Atomique Procede de fabrication d'un dispositif d'identification et d'authentification a base de diode organique, dispositif et procede d'utilisation.
WO2009090780A1 (ja) * 2008-01-15 2009-07-23 Sharp Kabushiki Kaisha 半導体装置、その製造方法及び表示装置
JP2010238722A (ja) * 2009-03-30 2010-10-21 Hitachi Ltd シリコン発光素子
US8269931B2 (en) * 2009-09-14 2012-09-18 The Aerospace Corporation Systems and methods for preparing films using sequential ion implantation, and films formed using same
US8946864B2 (en) 2011-03-16 2015-02-03 The Aerospace Corporation Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same
JP5762851B2 (ja) * 2011-06-28 2015-08-12 株式会社日立製作所 シリコン及びゲルマニウム発光素子
US9209091B1 (en) 2011-08-05 2015-12-08 Maxim Integrated Products, Inc. Integrated monolithic galvanic isolator
WO2013118248A1 (ja) * 2012-02-06 2013-08-15 株式会社日立製作所 発光素子
US8995800B2 (en) * 2012-07-06 2015-03-31 Teledyne Scientific & Imaging, Llc Method of fabricating silicon waveguides with embedded active circuitry
US20140027808A1 (en) * 2012-07-26 2014-01-30 University Of Rochester Lateral carrier injection infrared light emitting diode structure, method and applications
US20140103452A1 (en) 2012-10-15 2014-04-17 Marvell World Trade Ltd. Isolation components for transistors formed on fin features of semiconductor substrates
JP2014093500A (ja) * 2012-11-07 2014-05-19 Nippon Telegr & Teleph Corp <Ntt> 発光素子
JP2014165292A (ja) * 2013-02-25 2014-09-08 Hitachi Ltd 発光素子及びその製造方法並びに光送受信器
US9324579B2 (en) 2013-03-14 2016-04-26 The Aerospace Corporation Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates
US9690042B2 (en) * 2013-05-23 2017-06-27 Electronics And Telecommunications Research Institute Optical input/output device, optical electronic system including the same, and method of manufacturing the same
US10571631B2 (en) 2015-01-05 2020-02-25 The Research Foundation For The State University Of New York Integrated photonics including waveguiding material
US9362444B1 (en) * 2015-03-18 2016-06-07 International Business Machines Corporation Optoelectronics and CMOS integration on GOI substrate
KR101677542B1 (ko) * 2015-04-15 2016-11-18 연세대학교 산학협력단 무기물질 웨이퍼 내부의 스트레인을 이용한 고성능 유연 무기물질, 그 제조 방법 및 전계효과 트랜지스터
JP6697858B2 (ja) * 2015-09-04 2020-05-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6600513B2 (ja) * 2015-09-04 2019-10-30 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10776912B2 (en) * 2016-03-09 2020-09-15 Agency For Science, Technology And Research Self-determining inspection method for automated optical wire bond inspection
US9653441B1 (en) * 2016-06-20 2017-05-16 International Business Machines Corporation Monolithic integration of a III-V optoelectronic device, a filter and a driving circuit
US10976491B2 (en) 2016-11-23 2021-04-13 The Research Foundation For The State University Of New York Photonics interposer optoelectronics
EP3340403B1 (en) * 2016-12-23 2023-06-28 IMEC vzw Improvements in or relating to laser devices
CN117148498A (zh) * 2017-04-19 2023-12-01 卢克斯特拉有限公司 用于二维模式匹配光栅耦合器的方法和系统
US10698156B2 (en) 2017-04-27 2020-06-30 The Research Foundation For The State University Of New York Wafer scale bonded active photonics interposer
FR3079036A1 (fr) * 2018-03-15 2019-09-20 Stmicroelectronics (Crolles 2) Sas Dispositif de filtrage dans un guide d'onde
SG11202009807UA (en) 2018-04-04 2020-11-27 Univ New York State Res Found Heterogeneous structure on an integrated photonics platform
US10816724B2 (en) 2018-04-05 2020-10-27 The Research Foundation For The State University Of New York Fabricating photonics structure light signal transmission regions
US11550099B2 (en) 2018-11-21 2023-01-10 The Research Foundation For The State University Of New York Photonics optoelectrical system
TWI851601B (zh) 2018-11-21 2024-08-11 紐約州立大學研究基金會 光子光電系統及其製造方法
US11029466B2 (en) 2018-11-21 2021-06-08 The Research Foundation For The State University Of New York Photonics structure with integrated laser
TWI683370B (zh) * 2019-03-12 2020-01-21 環球晶圓股份有限公司 半導體元件及其製造方法
US12449593B2 (en) 2019-06-18 2025-10-21 The Research Foundation For The State University Of New York Fabricating photonics structure conductive pathways
JP7467146B2 (ja) * 2020-02-07 2024-04-15 ソニーセミコンダクタソリューションズ株式会社 発光装置及び発光装置の製造方法、並びに、表示装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3181303B2 (ja) * 1990-04-20 2001-07-03 株式会社日立製作所 発光素子
JPH06140669A (ja) * 1992-10-29 1994-05-20 Hitachi Ltd 発光素子及びその製造方法
JPH06268254A (ja) * 1993-03-15 1994-09-22 Toshiba Corp 半導体装置
JPH0846237A (ja) * 1994-07-27 1996-02-16 Nippon Telegr & Teleph Corp <Ntt> シリコン発光ダイオード
JP3565453B2 (ja) * 1994-08-23 2004-09-15 キヤノン株式会社 画像入出力装置
US5466948A (en) * 1994-10-11 1995-11-14 John M. Baker Monolithic silicon opto-coupler using enhanced silicon based LEDS
JPH09205223A (ja) * 1995-11-24 1997-08-05 Denso Corp 半導体装置
JPH10144953A (ja) * 1996-11-05 1998-05-29 Denso Corp モノリシックフォトカプラ
EP0895292A1 (en) * 1997-07-29 1999-02-03 Hitachi Europe Limited Electroluminescent device
JP2001042150A (ja) 1999-07-30 2001-02-16 Canon Inc 光導波路、その作製方法、およびこれを用いた光インタコネクション装置
US6611000B2 (en) * 2001-03-14 2003-08-26 Matsushita Electric Industrial Co., Ltd. Lighting device
AUPR534201A0 (en) * 2001-05-30 2001-06-21 Unisearch Limited High efficiency silicon light emitting device

Similar Documents

Publication Publication Date Title
JP2008205006A5 (enExample)
CN111969121B (zh) 发光显示装置
JP4416731B2 (ja) 発光ダイオードパッケージ及びその製造方法
US9196869B2 (en) Manufacturing method of light-emitting device with nano-imprinting wiring
TWI645578B (zh) 發光裝置及發光裝置的製造方法
CN110429097B (zh) 一种显示面板、显示装置和显示面板的制备方法
US9054259B2 (en) Light-emitting device and method of manufacturing the same
CN101855733B (zh) 发光器件及其制造方法
CN112447689B (zh) 显示装置
JP2005093396A5 (enExample)
JP2011513957A5 (enExample)
CN103219354A (zh) 有机发光二极管显示器及其制造方法
US8692280B2 (en) Optoelectronic semiconductor device
TWI549278B (zh) 發光二極體元件
CN106663723A (zh) 发光二极管及其制造方法
TW201244215A (en) Light-emitting device
CN112038333B (zh) 微型发光二极管显示阵列及其制作方法
US20110084253A1 (en) Organic light emitting diode lighting apparatus and method for manufacturing the same
JP2010244808A5 (enExample)
JP2010050255A5 (enExample)
JP2012134452A5 (enExample)
US8008686B2 (en) Light emitting diode chip
JP2012221811A (ja) 表示装置
JP2013172147A (ja) 発光ダイオード素子
TWI519205B (zh) 有機發光二極體發光設備