JP4996938B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP4996938B2
JP4996938B2 JP2007036328A JP2007036328A JP4996938B2 JP 4996938 B2 JP4996938 B2 JP 4996938B2 JP 2007036328 A JP2007036328 A JP 2007036328A JP 2007036328 A JP2007036328 A JP 2007036328A JP 4996938 B2 JP4996938 B2 JP 4996938B2
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JP
Japan
Prior art keywords
light emitting
silicon
waveguide
emitting element
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007036328A
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English (en)
Japanese (ja)
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JP2008205006A (ja
JP2008205006A5 (enExample
Inventor
大 久本
慎一 斎藤
紳一郎 木村
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Hitachi Ltd
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Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2007036328A priority Critical patent/JP4996938B2/ja
Priority to US11/935,904 priority patent/US8030668B2/en
Priority to EP07021946A priority patent/EP1959504A3/en
Priority to KR1020070117564A priority patent/KR20080076694A/ko
Publication of JP2008205006A publication Critical patent/JP2008205006A/ja
Publication of JP2008205006A5 publication Critical patent/JP2008205006A5/ja
Application granted granted Critical
Publication of JP4996938B2 publication Critical patent/JP4996938B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
  • Optical Couplings Of Light Guides (AREA)
JP2007036328A 2007-02-16 2007-02-16 半導体発光素子 Expired - Fee Related JP4996938B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007036328A JP4996938B2 (ja) 2007-02-16 2007-02-16 半導体発光素子
US11/935,904 US8030668B2 (en) 2007-02-16 2007-11-06 Semiconductor LED, opto-electronic integrated circuits (OEIC), and method of fabricating OEIC
EP07021946A EP1959504A3 (en) 2007-02-16 2007-11-12 Semiconductor LED, opto-electronic integrated circuits (OEIC), and method of fabricating OEIC
KR1020070117564A KR20080076694A (ko) 2007-02-16 2007-11-16 반도체 발광 소자, 및 그것을 이용한 광전자 집적 회로, 및광전자 집적 회로의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007036328A JP4996938B2 (ja) 2007-02-16 2007-02-16 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2008205006A JP2008205006A (ja) 2008-09-04
JP2008205006A5 JP2008205006A5 (enExample) 2009-09-10
JP4996938B2 true JP4996938B2 (ja) 2012-08-08

Family

ID=39420503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007036328A Expired - Fee Related JP4996938B2 (ja) 2007-02-16 2007-02-16 半導体発光素子

Country Status (4)

Country Link
US (1) US8030668B2 (enExample)
EP (1) EP1959504A3 (enExample)
JP (1) JP4996938B2 (enExample)
KR (1) KR20080076694A (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5003013B2 (ja) * 2006-04-25 2012-08-15 株式会社日立製作所 シリコン発光ダイオード、シリコン光トランジスタ、シリコンレーザー及びそれらの製造方法。
JP5117156B2 (ja) * 2007-10-05 2013-01-09 株式会社日立製作所 半導体装置
FR2925728B1 (fr) * 2007-12-20 2010-01-01 Commissariat Energie Atomique Procede de fabrication d'un dispositif d'identification et d'authentification a base de diode organique, dispositif et procede d'utilisation.
US20100289037A1 (en) * 2008-01-15 2010-11-18 Shin Matsumoto Semiconductor device, manufacturing method thereof and display device
JP2010238722A (ja) * 2009-03-30 2010-10-21 Hitachi Ltd シリコン発光素子
US8269931B2 (en) * 2009-09-14 2012-09-18 The Aerospace Corporation Systems and methods for preparing films using sequential ion implantation, and films formed using same
US8946864B2 (en) 2011-03-16 2015-02-03 The Aerospace Corporation Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same
JP5762851B2 (ja) * 2011-06-28 2015-08-12 株式会社日立製作所 シリコン及びゲルマニウム発光素子
US9209091B1 (en) 2011-08-05 2015-12-08 Maxim Integrated Products, Inc. Integrated monolithic galvanic isolator
WO2013118248A1 (ja) * 2012-02-06 2013-08-15 株式会社日立製作所 発光素子
US8995800B2 (en) * 2012-07-06 2015-03-31 Teledyne Scientific & Imaging, Llc Method of fabricating silicon waveguides with embedded active circuitry
US20140027808A1 (en) * 2012-07-26 2014-01-30 University Of Rochester Lateral carrier injection infrared light emitting diode structure, method and applications
US20140103452A1 (en) 2012-10-15 2014-04-17 Marvell World Trade Ltd. Isolation components for transistors formed on fin features of semiconductor substrates
JP2014093500A (ja) * 2012-11-07 2014-05-19 Nippon Telegr & Teleph Corp <Ntt> 発光素子
JP2014165292A (ja) * 2013-02-25 2014-09-08 Hitachi Ltd 発光素子及びその製造方法並びに光送受信器
US9324579B2 (en) 2013-03-14 2016-04-26 The Aerospace Corporation Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates
US9690042B2 (en) * 2013-05-23 2017-06-27 Electronics And Telecommunications Research Institute Optical input/output device, optical electronic system including the same, and method of manufacturing the same
US10571631B2 (en) 2015-01-05 2020-02-25 The Research Foundation For The State University Of New York Integrated photonics including waveguiding material
US9362444B1 (en) * 2015-03-18 2016-06-07 International Business Machines Corporation Optoelectronics and CMOS integration on GOI substrate
KR101677542B1 (ko) * 2015-04-15 2016-11-18 연세대학교 산학협력단 무기물질 웨이퍼 내부의 스트레인을 이용한 고성능 유연 무기물질, 그 제조 방법 및 전계효과 트랜지스터
JP6600513B2 (ja) * 2015-09-04 2019-10-30 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6697858B2 (ja) * 2015-09-04 2020-05-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10776912B2 (en) * 2016-03-09 2020-09-15 Agency For Science, Technology And Research Self-determining inspection method for automated optical wire bond inspection
US9653441B1 (en) * 2016-06-20 2017-05-16 International Business Machines Corporation Monolithic integration of a III-V optoelectronic device, a filter and a driving circuit
US10976491B2 (en) 2016-11-23 2021-04-13 The Research Foundation For The State University Of New York Photonics interposer optoelectronics
EP3340403B1 (en) * 2016-12-23 2023-06-28 IMEC vzw Improvements in or relating to laser devices
CN110770615A (zh) * 2017-04-19 2020-02-07 卢克斯特拉有限公司 用于二维模式匹配光栅耦合器的方法和系统
US10698156B2 (en) 2017-04-27 2020-06-30 The Research Foundation For The State University Of New York Wafer scale bonded active photonics interposer
FR3079036A1 (fr) * 2018-03-15 2019-09-20 Stmicroelectronics (Crolles 2) Sas Dispositif de filtrage dans un guide d'onde
US10877300B2 (en) 2018-04-04 2020-12-29 The Research Foundation For The State University Of New York Heterogeneous structure on an integrated photonics platform
US10816724B2 (en) 2018-04-05 2020-10-27 The Research Foundation For The State University Of New York Fabricating photonics structure light signal transmission regions
TWI851601B (zh) 2018-11-21 2024-08-11 紐約州立大學研究基金會 光子光電系統及其製造方法
US11550099B2 (en) 2018-11-21 2023-01-10 The Research Foundation For The State University Of New York Photonics optoelectrical system
US11029466B2 (en) 2018-11-21 2021-06-08 The Research Foundation For The State University Of New York Photonics structure with integrated laser
TWI683370B (zh) * 2019-03-12 2020-01-21 環球晶圓股份有限公司 半導體元件及其製造方法
EP3987578A2 (en) 2019-06-18 2022-04-27 The Research Foundation for The State University of New York Fabricating photonics structure conductive pathways
JP7467146B2 (ja) * 2020-02-07 2024-04-15 ソニーセミコンダクタソリューションズ株式会社 発光装置及び発光装置の製造方法、並びに、表示装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3181303B2 (ja) * 1990-04-20 2001-07-03 株式会社日立製作所 発光素子
JPH06140669A (ja) * 1992-10-29 1994-05-20 Hitachi Ltd 発光素子及びその製造方法
JPH06268254A (ja) * 1993-03-15 1994-09-22 Toshiba Corp 半導体装置
JPH0846237A (ja) * 1994-07-27 1996-02-16 Nippon Telegr & Teleph Corp <Ntt> シリコン発光ダイオード
JP3565453B2 (ja) * 1994-08-23 2004-09-15 キヤノン株式会社 画像入出力装置
US5466948A (en) * 1994-10-11 1995-11-14 John M. Baker Monolithic silicon opto-coupler using enhanced silicon based LEDS
JPH09205223A (ja) * 1995-11-24 1997-08-05 Denso Corp 半導体装置
JPH10144953A (ja) * 1996-11-05 1998-05-29 Denso Corp モノリシックフォトカプラ
EP0895292A1 (en) * 1997-07-29 1999-02-03 Hitachi Europe Limited Electroluminescent device
JP2001042150A (ja) * 1999-07-30 2001-02-16 Canon Inc 光導波路、その作製方法、およびこれを用いた光インタコネクション装置
US6611000B2 (en) * 2001-03-14 2003-08-26 Matsushita Electric Industrial Co., Ltd. Lighting device
AUPR534201A0 (en) * 2001-05-30 2001-06-21 Unisearch Limited High efficiency silicon light emitting device

Also Published As

Publication number Publication date
EP1959504A3 (en) 2012-12-26
US8030668B2 (en) 2011-10-04
KR20080076694A (ko) 2008-08-20
EP1959504A2 (en) 2008-08-20
JP2008205006A (ja) 2008-09-04
US20080197362A1 (en) 2008-08-21

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