KR20080076694A - 반도체 발광 소자, 및 그것을 이용한 광전자 집적 회로, 및광전자 집적 회로의 제조 방법 - Google Patents

반도체 발광 소자, 및 그것을 이용한 광전자 집적 회로, 및광전자 집적 회로의 제조 방법 Download PDF

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Publication number
KR20080076694A
KR20080076694A KR1020070117564A KR20070117564A KR20080076694A KR 20080076694 A KR20080076694 A KR 20080076694A KR 1020070117564 A KR1020070117564 A KR 1020070117564A KR 20070117564 A KR20070117564 A KR 20070117564A KR 20080076694 A KR20080076694 A KR 20080076694A
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KR
South Korea
Prior art keywords
light emitting
silicon
film
region
waveguide
Prior art date
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Abandoned
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KR1020070117564A
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English (en)
Korean (ko)
Inventor
다이 히사모또
신이찌 사이또
신이찌로 기무라
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가부시키가이샤 히타치세이사쿠쇼 filed Critical 가부시키가이샤 히타치세이사쿠쇼
Publication of KR20080076694A publication Critical patent/KR20080076694A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
  • Optical Couplings Of Light Guides (AREA)
KR1020070117564A 2007-02-16 2007-11-16 반도체 발광 소자, 및 그것을 이용한 광전자 집적 회로, 및광전자 집적 회로의 제조 방법 Abandoned KR20080076694A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00036328 2007-02-16
JP2007036328A JP4996938B2 (ja) 2007-02-16 2007-02-16 半導体発光素子

Publications (1)

Publication Number Publication Date
KR20080076694A true KR20080076694A (ko) 2008-08-20

Family

ID=39420503

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070117564A Abandoned KR20080076694A (ko) 2007-02-16 2007-11-16 반도체 발광 소자, 및 그것을 이용한 광전자 집적 회로, 및광전자 집적 회로의 제조 방법

Country Status (4)

Country Link
US (1) US8030668B2 (enExample)
EP (1) EP1959504A3 (enExample)
JP (1) JP4996938B2 (enExample)
KR (1) KR20080076694A (enExample)

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JP5003013B2 (ja) * 2006-04-25 2012-08-15 株式会社日立製作所 シリコン発光ダイオード、シリコン光トランジスタ、シリコンレーザー及びそれらの製造方法。
JP5117156B2 (ja) * 2007-10-05 2013-01-09 株式会社日立製作所 半導体装置
FR2925728B1 (fr) * 2007-12-20 2010-01-01 Commissariat Energie Atomique Procede de fabrication d'un dispositif d'identification et d'authentification a base de diode organique, dispositif et procede d'utilisation.
US20100289037A1 (en) * 2008-01-15 2010-11-18 Shin Matsumoto Semiconductor device, manufacturing method thereof and display device
JP2010238722A (ja) * 2009-03-30 2010-10-21 Hitachi Ltd シリコン発光素子
US8269931B2 (en) * 2009-09-14 2012-09-18 The Aerospace Corporation Systems and methods for preparing films using sequential ion implantation, and films formed using same
US8946864B2 (en) 2011-03-16 2015-02-03 The Aerospace Corporation Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same
JP5762851B2 (ja) * 2011-06-28 2015-08-12 株式会社日立製作所 シリコン及びゲルマニウム発光素子
US9209091B1 (en) 2011-08-05 2015-12-08 Maxim Integrated Products, Inc. Integrated monolithic galvanic isolator
WO2013118248A1 (ja) * 2012-02-06 2013-08-15 株式会社日立製作所 発光素子
US8995800B2 (en) * 2012-07-06 2015-03-31 Teledyne Scientific & Imaging, Llc Method of fabricating silicon waveguides with embedded active circuitry
US20140027808A1 (en) * 2012-07-26 2014-01-30 University Of Rochester Lateral carrier injection infrared light emitting diode structure, method and applications
US20140103452A1 (en) 2012-10-15 2014-04-17 Marvell World Trade Ltd. Isolation components for transistors formed on fin features of semiconductor substrates
JP2014093500A (ja) * 2012-11-07 2014-05-19 Nippon Telegr & Teleph Corp <Ntt> 発光素子
JP2014165292A (ja) * 2013-02-25 2014-09-08 Hitachi Ltd 発光素子及びその製造方法並びに光送受信器
US9324579B2 (en) 2013-03-14 2016-04-26 The Aerospace Corporation Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates
US9690042B2 (en) * 2013-05-23 2017-06-27 Electronics And Telecommunications Research Institute Optical input/output device, optical electronic system including the same, and method of manufacturing the same
US10571631B2 (en) 2015-01-05 2020-02-25 The Research Foundation For The State University Of New York Integrated photonics including waveguiding material
US9362444B1 (en) * 2015-03-18 2016-06-07 International Business Machines Corporation Optoelectronics and CMOS integration on GOI substrate
KR101677542B1 (ko) * 2015-04-15 2016-11-18 연세대학교 산학협력단 무기물질 웨이퍼 내부의 스트레인을 이용한 고성능 유연 무기물질, 그 제조 방법 및 전계효과 트랜지스터
JP6600513B2 (ja) * 2015-09-04 2019-10-30 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6697858B2 (ja) * 2015-09-04 2020-05-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10776912B2 (en) * 2016-03-09 2020-09-15 Agency For Science, Technology And Research Self-determining inspection method for automated optical wire bond inspection
US9653441B1 (en) * 2016-06-20 2017-05-16 International Business Machines Corporation Monolithic integration of a III-V optoelectronic device, a filter and a driving circuit
US10976491B2 (en) 2016-11-23 2021-04-13 The Research Foundation For The State University Of New York Photonics interposer optoelectronics
EP3340403B1 (en) * 2016-12-23 2023-06-28 IMEC vzw Improvements in or relating to laser devices
CN110770615A (zh) * 2017-04-19 2020-02-07 卢克斯特拉有限公司 用于二维模式匹配光栅耦合器的方法和系统
US10698156B2 (en) 2017-04-27 2020-06-30 The Research Foundation For The State University Of New York Wafer scale bonded active photonics interposer
FR3079036A1 (fr) * 2018-03-15 2019-09-20 Stmicroelectronics (Crolles 2) Sas Dispositif de filtrage dans un guide d'onde
US10877300B2 (en) 2018-04-04 2020-12-29 The Research Foundation For The State University Of New York Heterogeneous structure on an integrated photonics platform
US10816724B2 (en) 2018-04-05 2020-10-27 The Research Foundation For The State University Of New York Fabricating photonics structure light signal transmission regions
TWI851601B (zh) 2018-11-21 2024-08-11 紐約州立大學研究基金會 光子光電系統及其製造方法
US11550099B2 (en) 2018-11-21 2023-01-10 The Research Foundation For The State University Of New York Photonics optoelectrical system
US11029466B2 (en) 2018-11-21 2021-06-08 The Research Foundation For The State University Of New York Photonics structure with integrated laser
TWI683370B (zh) * 2019-03-12 2020-01-21 環球晶圓股份有限公司 半導體元件及其製造方法
EP3987578A2 (en) 2019-06-18 2022-04-27 The Research Foundation for The State University of New York Fabricating photonics structure conductive pathways
JP7467146B2 (ja) * 2020-02-07 2024-04-15 ソニーセミコンダクタソリューションズ株式会社 発光装置及び発光装置の製造方法、並びに、表示装置

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JP3181303B2 (ja) * 1990-04-20 2001-07-03 株式会社日立製作所 発光素子
JPH06140669A (ja) * 1992-10-29 1994-05-20 Hitachi Ltd 発光素子及びその製造方法
JPH06268254A (ja) * 1993-03-15 1994-09-22 Toshiba Corp 半導体装置
JPH0846237A (ja) * 1994-07-27 1996-02-16 Nippon Telegr & Teleph Corp <Ntt> シリコン発光ダイオード
JP3565453B2 (ja) * 1994-08-23 2004-09-15 キヤノン株式会社 画像入出力装置
US5466948A (en) * 1994-10-11 1995-11-14 John M. Baker Monolithic silicon opto-coupler using enhanced silicon based LEDS
JPH09205223A (ja) * 1995-11-24 1997-08-05 Denso Corp 半導体装置
JPH10144953A (ja) * 1996-11-05 1998-05-29 Denso Corp モノリシックフォトカプラ
EP0895292A1 (en) * 1997-07-29 1999-02-03 Hitachi Europe Limited Electroluminescent device
JP2001042150A (ja) * 1999-07-30 2001-02-16 Canon Inc 光導波路、その作製方法、およびこれを用いた光インタコネクション装置
US6611000B2 (en) * 2001-03-14 2003-08-26 Matsushita Electric Industrial Co., Ltd. Lighting device
AUPR534201A0 (en) * 2001-05-30 2001-06-21 Unisearch Limited High efficiency silicon light emitting device

Also Published As

Publication number Publication date
EP1959504A3 (en) 2012-12-26
US8030668B2 (en) 2011-10-04
EP1959504A2 (en) 2008-08-20
JP2008205006A (ja) 2008-09-04
JP4996938B2 (ja) 2012-08-08
US20080197362A1 (en) 2008-08-21

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