JP2005093396A5 - - Google Patents
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- Publication number
- JP2005093396A5 JP2005093396A5 JP2003328942A JP2003328942A JP2005093396A5 JP 2005093396 A5 JP2005093396 A5 JP 2005093396A5 JP 2003328942 A JP2003328942 A JP 2003328942A JP 2003328942 A JP2003328942 A JP 2003328942A JP 2005093396 A5 JP2005093396 A5 JP 2005093396A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- insulating film
- light
- interlayer insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003328942A JP4823478B2 (ja) | 2003-09-19 | 2003-09-19 | 発光装置の作製方法 |
| US10/941,837 US7306978B2 (en) | 2003-09-19 | 2004-09-16 | Light emitting device and method of manufacturing thereof |
| CNB2004100787653A CN100405577C (zh) | 2003-09-19 | 2004-09-18 | 发光器件及其制造方法 |
| US11/984,552 US7737449B2 (en) | 2003-09-19 | 2007-11-19 | Light emitting device and method of manufacturing thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003328942A JP4823478B2 (ja) | 2003-09-19 | 2003-09-19 | 発光装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005093396A JP2005093396A (ja) | 2005-04-07 |
| JP2005093396A5 true JP2005093396A5 (enExample) | 2006-10-26 |
| JP4823478B2 JP4823478B2 (ja) | 2011-11-24 |
Family
ID=34308840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003328942A Expired - Fee Related JP4823478B2 (ja) | 2003-09-19 | 2003-09-19 | 発光装置の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7306978B2 (enExample) |
| JP (1) | JP4823478B2 (enExample) |
| CN (1) | CN100405577C (enExample) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6965124B2 (en) * | 2000-12-12 | 2005-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method of fabricating the same |
| US7520790B2 (en) | 2003-09-19 | 2009-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
| EP1820372B1 (en) | 2004-09-24 | 2016-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US8633473B2 (en) | 2004-12-28 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | High contrast light emitting device and method for manufacturing the same |
| JP4939809B2 (ja) | 2005-01-21 | 2012-05-30 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP4581759B2 (ja) * | 2005-03-14 | 2010-11-17 | セイコーエプソン株式会社 | 発光装置、画像形成装置および電子機器 |
| US8729795B2 (en) | 2005-06-30 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
| JP5222281B2 (ja) * | 2006-04-06 | 2013-06-26 | アプライド マテリアルズ インコーポレイテッド | ラージエリア基板への酸化亜鉛透明導電性酸化物の反応性スパッタリング |
| TWI358964B (en) * | 2006-04-12 | 2012-02-21 | Au Optronics Corp | Electroluminescence display element and method for |
| US7737455B2 (en) * | 2006-05-19 | 2010-06-15 | Bridgelux, Inc. | Electrode structures for LEDs with increased active area |
| US7674662B2 (en) * | 2006-07-19 | 2010-03-09 | Applied Materials, Inc. | Process for making thin film field effect transistors using zinc oxide |
| CN100426490C (zh) * | 2006-07-25 | 2008-10-15 | 友达光电股份有限公司 | 有源元件基板的形成方法 |
| US7736936B2 (en) | 2006-08-29 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming display device that includes removing mask to form opening in insulating film |
| US20080254613A1 (en) * | 2007-04-10 | 2008-10-16 | Applied Materials, Inc. | Methods for forming metal interconnect structure for thin film transistor applications |
| US7927713B2 (en) | 2007-04-27 | 2011-04-19 | Applied Materials, Inc. | Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
| WO2009117438A2 (en) * | 2008-03-20 | 2009-09-24 | Applied Materials, Inc. | Process to make metal oxide thin film transistor array with etch stopping layer |
| US7879698B2 (en) * | 2008-03-24 | 2011-02-01 | Applied Materials, Inc. | Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor |
| US8258511B2 (en) | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
| KR101542840B1 (ko) * | 2008-09-09 | 2015-08-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이의 제조 방법 |
| KR101603314B1 (ko) * | 2008-09-11 | 2016-03-15 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| US20100133094A1 (en) * | 2008-12-02 | 2010-06-03 | Applied Materials, Inc. | Transparent conductive film with high transmittance formed by a reactive sputter deposition |
| US20100163406A1 (en) * | 2008-12-30 | 2010-07-01 | Applied Materials, Inc. | Substrate support in a reactive sputter chamber |
| KR101015850B1 (ko) * | 2009-02-09 | 2011-02-24 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 제조 방법 |
| US8766269B2 (en) | 2009-07-02 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, lighting device, and electronic device |
| WO2011022397A1 (en) * | 2009-08-17 | 2011-02-24 | First Solar, Inc. | Barrier layer |
| WO2011037829A2 (en) * | 2009-09-24 | 2011-03-31 | Applied Materials, Inc. | Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch |
| US8840763B2 (en) * | 2009-09-28 | 2014-09-23 | Applied Materials, Inc. | Methods for stable process in a reactive sputtering process using zinc or doped zinc target |
| JP5479391B2 (ja) * | 2011-03-08 | 2014-04-23 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| JP6220497B2 (ja) * | 2011-06-09 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US20120319113A1 (en) * | 2011-06-17 | 2012-12-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101423907B1 (ko) * | 2011-11-22 | 2014-07-29 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터 및 그 제조방법 |
| KR101434366B1 (ko) | 2012-08-24 | 2014-08-26 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 이를 포함하는 표시 장치 |
| CN102856392B (zh) * | 2012-10-09 | 2015-12-02 | 深圳市华星光电技术有限公司 | 薄膜晶体管主动装置及其制作方法 |
| KR102010789B1 (ko) * | 2012-12-27 | 2019-10-21 | 엘지디스플레이 주식회사 | 투명 유기 발광 표시 장치 및 투명 유기 발광 표시 장치 제조 방법 |
| WO2014199673A1 (ja) * | 2013-06-11 | 2014-12-18 | シャープ株式会社 | 有機エレクトロルミネッセンス表示装置 |
| KR101907593B1 (ko) | 2013-08-13 | 2018-10-15 | 삼성디스플레이 주식회사 | 가요성 표시 장치 |
| TWI790965B (zh) | 2014-05-30 | 2023-01-21 | 日商半導體能源研究所股份有限公司 | 觸控面板 |
| CN104091832B (zh) * | 2014-06-27 | 2018-07-17 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板和显示装置 |
| KR20160014833A (ko) * | 2014-07-29 | 2016-02-12 | 삼성디스플레이 주식회사 | 금속 배선의 제조 방법 및 박막트랜지스터 기판 제조 방법 |
| US10680017B2 (en) * | 2014-11-07 | 2020-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device |
| CN108319057A (zh) * | 2018-03-29 | 2018-07-24 | 武汉华星光电技术有限公司 | 基板边缘处理方法、掩膜版 |
| WO2019202739A1 (ja) | 2018-04-20 | 2019-10-24 | 堺ディスプレイプロダクト株式会社 | 有機elデバイスおよびその製造方法 |
| KR20250069709A (ko) | 2018-05-18 | 2025-05-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 장치, 전자 기기, 및 조명 장치 |
| KR102104590B1 (ko) * | 2019-08-23 | 2020-04-27 | 삼성디스플레이 주식회사 | 가요성 표시 장치 |
| CN111293147B (zh) * | 2020-02-19 | 2024-02-09 | 合肥鑫晟光电科技有限公司 | 一种显示用基板及其制备方法、显示装置 |
| KR102185251B1 (ko) * | 2020-04-20 | 2020-12-02 | 삼성디스플레이 주식회사 | 가요성 표시 장치 |
| KR102225595B1 (ko) * | 2020-11-25 | 2021-03-09 | 삼성디스플레이 주식회사 | 가요성 표시 장치 |
| KR102303603B1 (ko) * | 2020-11-25 | 2021-09-17 | 삼성디스플레이 주식회사 | 가요성 표시 장치 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61142688A (ja) * | 1984-12-14 | 1986-06-30 | 株式会社日立製作所 | 薄膜el素子の製造方法 |
| JPH0846045A (ja) * | 1994-05-27 | 1996-02-16 | Sanyo Electric Co Ltd | 半導体装置 |
| US5707745A (en) * | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
| JPH09236826A (ja) | 1995-09-28 | 1997-09-09 | Sharp Corp | 液晶表示素子およびその製造方法 |
| TW364275B (en) * | 1996-03-12 | 1999-07-11 | Idemitsu Kosan Co | Organic electroluminescent element and organic electroluminescent display device |
| US6489952B1 (en) * | 1998-11-17 | 2002-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type semiconductor display device |
| US6599788B1 (en) * | 1999-08-18 | 2003-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| JP4562835B2 (ja) * | 1999-11-05 | 2010-10-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2001176673A (ja) * | 1999-12-14 | 2001-06-29 | Tdk Corp | 有機el素子 |
| TW473800B (en) * | 1999-12-28 | 2002-01-21 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| US6872607B2 (en) * | 2000-03-21 | 2005-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| TW501282B (en) * | 2000-06-07 | 2002-09-01 | Semiconductor Energy Lab | Method of manufacturing semiconductor device |
| WO2002009478A1 (fr) | 2000-07-24 | 2002-01-31 | Tdk Corporation | Dispositif luminescent |
| TW522577B (en) * | 2000-11-10 | 2003-03-01 | Semiconductor Energy Lab | Light emitting device |
| JP4872155B2 (ja) * | 2001-01-17 | 2012-02-08 | 凸版印刷株式会社 | Itoパターン付き基板の製造方法 |
| US7115453B2 (en) | 2001-01-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| JP4693253B2 (ja) | 2001-01-30 | 2011-06-01 | 株式会社半導体エネルギー研究所 | 発光装置、電子機器 |
| JP2002352950A (ja) | 2001-02-07 | 2002-12-06 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| SG138468A1 (en) * | 2001-02-28 | 2008-01-28 | Semiconductor Energy Lab | A method of manufacturing a semiconductor device |
| SG117406A1 (en) * | 2001-03-19 | 2005-12-29 | Miconductor Energy Lab Co Ltd | Method of manufacturing a semiconductor device |
| JP3643067B2 (ja) * | 2001-10-11 | 2005-04-27 | 株式会社半導体エネルギー研究所 | 半導体表示装置の設計方法 |
| ATE372955T1 (de) * | 2001-11-09 | 2007-09-15 | Wispry Inc | Mems-einrichtung mit dreischichtigem biegebalken und diesbezügliche verfahren |
| US6822264B2 (en) | 2001-11-16 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP3798370B2 (ja) * | 2001-11-29 | 2006-07-19 | 株式会社半導体エネルギー研究所 | 表示装置及びこれを用いた表示システム |
| TWI273539B (en) * | 2001-11-29 | 2007-02-11 | Semiconductor Energy Lab | Display device and display system using the same |
| US7118943B2 (en) * | 2002-04-22 | 2006-10-10 | Seiko Epson Corporation | Production method of a thin film device, production method of a transistor, electro-optical apparatus and electronic equipment |
| US7897979B2 (en) * | 2002-06-07 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
| JP4741177B2 (ja) | 2003-08-29 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| US7816863B2 (en) | 2003-09-12 | 2010-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for manufacturing the same |
| US7520790B2 (en) | 2003-09-19 | 2009-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
-
2003
- 2003-09-19 JP JP2003328942A patent/JP4823478B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-16 US US10/941,837 patent/US7306978B2/en not_active Expired - Fee Related
- 2004-09-18 CN CNB2004100787653A patent/CN100405577C/zh not_active Expired - Fee Related
-
2007
- 2007-11-19 US US11/984,552 patent/US7737449B2/en not_active Expired - Fee Related
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