JP6309947B2 - 半導体レーザ装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 116
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
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- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
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Description
Claims (9)
- 半導体レーザチップ及びこの半導体レーザチップに光学的に結合した空間光変調器を備えた半導体レーザ装置であって、前記半導体レーザチップ上に前記空間光変調器が接して取り付けられており、
前記半導体レーザチップは、
活性層と、
前記活性層を挟む一対のクラッド層と、
前記活性層に光学的に結合した二次元的に屈折率変化する周期構造を有する回折格子層と、
を備え、
前記空間光変調器は、
透明な共通電極と、
透明な複数の画素電極と、
前記共通電極と前記画素電極との間に配置された液晶層と、
を備え、
前記回折格子層の厚み方向に沿って出力されたレーザ光が入力されるように、前記半導体レーザチップに取り付けられ、前記レーザ光の微小領域毎の位相を、前記画素電極と前記共通電極との間に印加される駆動電圧により変調し、位相変調したレーザ光を透過させて外部に出力する、
ことを特徴とする半導体レーザ装置。 - 前記半導体レーザチップ上に配置され、所望のアドレスに位置する前記画素電極と前記共通電極との間に、選択的に前記駆動電圧を与える選択回路を更に備えることを特徴とする請求項1に記載の半導体レーザ装置。
- 前記駆動電圧の初期補正値を前記画素電極毎に記憶する記憶装置を備えることを特徴とする請求項2に記載の半導体レーザ装置。
- 前記半導体レーザチップは、
前記活性層の形成されたレーザ光生成領域と、
前記レーザ光生成領域に隣接し、レーザ光を偏向する偏向領域と、
を備え、
前記回折格子層は、前記レーザ光生成領域及び前記偏向領域の双方に位置するように延びており、前記回折格子層の厚み方向に向けてレーザ光を回折し、
前記空間光変調器は、前記偏向領域上に取り付けられている、
ことを特徴とする請求項1〜3のいずれか一項に記載の半導体レーザ装置。 - 前記半導体レーザチップは、
前記活性層の形成されたレーザ光生成領域を備え、
前記回折格子層は、前記レーザ光生成領域に位置しており、前記回折格子層の厚み方向に向けてレーザ光を出射し、
前記空間光変調器は、前記レーザ光生成領域上に取り付けられている、
ことを特徴とする請求項1〜3のいずれか一項に記載の半導体レーザ装置。 - 前記空間光変調器から遠い方に位置する一方のクラッド層と、前記回折格子層との間に位置する分布ブラッグ反射器を更に備え、
前記回折格子層と前記分布ブラッグ反射器との間の光学的距離t2は、
2×t2=λ×N、または、λ×(N+1/2)
但し、λはレーザ光の波長、
Nは整数、を満たすように設定されていることを特徴とする請求項1〜5のいずれか一項に記載の半導体レーザ装置。 - 前記半導体レーザチップは、
前記活性層の形成されたレーザ光生成領域と、
前記レーザ光生成領域に隣接し、レーザ光を偏向する偏向領域と、
を備え、
前記回折格子層は、前記レーザ光生成領域及び前記偏向領域の双方に位置するように延びており、
前記偏向領域は、前記レーザ光生成領域によって囲まれている、
ことを特徴とする請求項1〜3のいずれか一項に記載の半導体レーザ装置。 - 前記空間光変調器は、前記偏向領域上に取り付けられていることを特徴とする請求項7に記載の半導体レーザ装置。
- 前記回折格子層は、
基本層と、
前記基本層内において周期的に形成され、前記基本層とは異なる屈折率を有する複数の異屈折率領域と、
を備え、
前記偏向領域における前記回折格子層の前記異屈折率領域の個々の平面形状は、回転非対称である、
ことを特徴とする請求項4、7又は8に記載の半導体レーザ装置。
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PCT/JP2014/061778 WO2014175447A1 (ja) | 2013-04-26 | 2014-04-25 | 半導体レーザ装置 |
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JP (1) | JP6309947B2 (ja) |
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JP5721246B1 (ja) * | 2014-08-08 | 2015-05-20 | 国立大学法人東京工業大学 | 光変調機能付き面発光レーザ |
JP6329893B2 (ja) | 2014-12-24 | 2018-05-23 | 浜松ホトニクス株式会社 | 半導体レーザ装置 |
JP6489836B2 (ja) | 2015-01-09 | 2019-03-27 | 浜松ホトニクス株式会社 | 半導体レーザ装置 |
US20160209809A1 (en) * | 2015-01-15 | 2016-07-21 | Electronics And Telecommunications Research Institute | Holographic display device |
JP6499003B2 (ja) * | 2015-04-23 | 2019-04-10 | 浜松ホトニクス株式会社 | 多波長レーザ光源及び誘導放出抑制顕微鏡 |
JP6747910B2 (ja) | 2016-08-10 | 2020-08-26 | 浜松ホトニクス株式会社 | 発光装置 |
US11031751B2 (en) | 2016-08-10 | 2021-06-08 | Hamamatsu Photonics K.K. | Light-emitting device |
US10734786B2 (en) | 2016-09-07 | 2020-08-04 | Hamamatsu Photonics K.K. | Semiconductor light emitting element and light emitting device including same |
JP6747922B2 (ja) * | 2016-09-07 | 2020-08-26 | 浜松ホトニクス株式会社 | 半導体発光素子及び発光装置 |
US9843160B1 (en) * | 2016-12-29 | 2017-12-12 | X Development Llc | Integrated digital laser |
US11637409B2 (en) | 2017-03-27 | 2023-04-25 | Hamamatsu Photonics K.K. | Semiconductor light-emitting module and control method therefor |
US11646546B2 (en) | 2017-03-27 | 2023-05-09 | Hamamatsu Photonics K.K. | Semiconductor light emitting array with phase modulation regions for generating beam projection patterns |
JP6959042B2 (ja) | 2017-06-15 | 2021-11-02 | 浜松ホトニクス株式会社 | 発光装置 |
JP6580097B2 (ja) * | 2017-09-05 | 2019-09-25 | 株式会社東芝 | 面発光量子カスケードレーザ |
DE112018006285T5 (de) | 2017-12-08 | 2021-01-28 | Hamamatsu Photonics K.K. | Lichtemittierende vorrichtung und herstellungsverfahren dafür |
US11309687B2 (en) | 2017-12-08 | 2022-04-19 | Hamamatsu Photonics K.K. | Light-emitting device and production method for same |
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