JP6329893B2 - 半導体レーザ装置 - Google Patents
半導体レーザ装置 Download PDFInfo
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- JP6329893B2 JP6329893B2 JP2014261094A JP2014261094A JP6329893B2 JP 6329893 B2 JP6329893 B2 JP 6329893B2 JP 2014261094 A JP2014261094 A JP 2014261094A JP 2014261094 A JP2014261094 A JP 2014261094A JP 6329893 B2 JP6329893 B2 JP 6329893B2
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- 239000004065 semiconductor Substances 0.000 title claims description 99
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- 239000000463 material Substances 0.000 description 27
- 239000000758 substrate Substances 0.000 description 23
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- 239000010408 film Substances 0.000 description 21
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 4
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
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- 238000004544 sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
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- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
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- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
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- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
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- G03H1/2286—Particular reconstruction light ; Beam properties
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- G03H1/02—Details of features involved during the holographic process; Replication of holograms without interference recording
- G03H2001/0208—Individual components other than the hologram
- G03H2001/0224—Active addressable light modulator, i.e. Spatial Light Modulator [SLM]
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1065—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using liquid crystals
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/34353—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on (AI)GaAs
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Description
Claims (6)
- 半導体レーザチップ及びこの半導体レーザチップに光学的に結合した空間光変調器を備え、前記半導体レーザチップの厚み方向に沿って出力されたレーザ光を、前記空間光変調器で変調して、外部に出力する半導体レーザ装置であって、
前記半導体レーザチップは、
活性層と、
前記活性層を挟む一対のクラッド層と、
前記活性層に光学的に結合した回折格子層と、
前記空間光変調器側の前記クラッド層と前記空間光変調器との間に配置され、前記活性層に電流を供給するための駆動電極と、
を備え、
XYZ三次元直交座標系を設定し、
前記半導体レーザチップの厚み方向をZ軸方向とし、
前記半導体レーザチップと前記空間光変調器との界面に平行な平面をXY平面とした場合、
前記駆動電極は、XY平面内に位置し、
前記駆動電極は、Z軸方向から見て、複数の開口を有しており、
前記駆動電極は、非周期構造を有している、
ことを特徴とする半導体レーザ装置。 - 前記駆動電極は、XY平面内において第1の方向に沿って直線的に延びた複数の導電領域を備え、
前記導電領域のX軸方向の幅をXeとし、
前記導電領域間のX軸方向の間隔をXsとし、
Nを整数として、
X軸方向に沿ってN番目に位置する前記導電領域の幅XeをXe(N)とし、
X軸方向に沿ってN番目に位置する間隔XsをXs(N)とした場合、
幅Xeには周期性がなく、Xe(N)とXe(N+1)は異なり、
間隔Xsには周期性がなく、Xs(N)とXs(N+1)は異なる、
ことを特徴とする請求項1に記載の半導体レーザ装置。 - 前記駆動電極は、
XY平面内において二次元的に位置する複数の開口を構成するように、
第1の方向に沿って延びた複数の第1導電領域と、
前記第1の方向とは異なる第2の方向に沿って延びた複数の第2導電領域と、
が重畳した形状を有しており、
前記第1導電領域のX軸方向の幅をXe1とし、
前記第1導電領域間のX軸方向の間隔をXs1とし、
Nを整数として、
X軸方向に沿ってN番目に位置する前記第1導電領域の幅Xe1をXe1(N)とし、
X軸方向に沿ってN番目に位置する間隔Xs1をXs1(N)とした場合、
幅Xe1には周期性がなく、Xe1(N)とXe1(N+1)は異なり、
間隔Xs1には周期性がなく、Xs1(N)とXs1(N+1)は異なる、
ことを特徴とする請求項1に記載の半導体レーザ装置。 - 前記第1導電領域及び前記第2導電領域の双方又はいずれか一方は、弧を描くように延びていることを特徴とする請求項3に記載の半導体レーザ装置。
- 前記駆動電極は、
XY平面内において二次元的に位置する複数の開口を構成するように、
第1の方向に沿って延びた複数の第1導電領域と、
前記第1の方向とは異なる第2の方向に沿って延びた複数の第2導電領域と、
前記第1の方向及び前記第2の方向のいずれとも異なる第3の方向に沿って延びた複数の第3導電領域と、
が重畳した形状を有している、
ことを特徴とする請求項1に記載の半導体レーザ装置。 - 前記駆動電極が設けられる領域は、
第1の非周期性構造を有する導電領域が形成される第1領域と、
第1の非周期性構造とは異なる第2の非周期性構造を有する導電領域が形成される第2領域と、
を備えていることを特徴とする請求項1に記載の半導体レーザ装置。
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