JP4445292B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP4445292B2
JP4445292B2 JP2004065496A JP2004065496A JP4445292B2 JP 4445292 B2 JP4445292 B2 JP 4445292B2 JP 2004065496 A JP2004065496 A JP 2004065496A JP 2004065496 A JP2004065496 A JP 2004065496A JP 4445292 B2 JP4445292 B2 JP 4445292B2
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JP
Japan
Prior art keywords
semiconductor light
light emitting
photonic crystal
emitting element
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004065496A
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English (en)
Japanese (ja)
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JP2004253811A (ja
JP2004253811A5 (enExample
Inventor
信之 大塚
重雄 吉井
俊哉 横川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2004065496A priority Critical patent/JP4445292B2/ja
Publication of JP2004253811A publication Critical patent/JP2004253811A/ja
Publication of JP2004253811A5 publication Critical patent/JP2004253811A5/ja
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Publication of JP4445292B2 publication Critical patent/JP4445292B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Semiconductor Lasers (AREA)
JP2004065496A 2002-02-08 2004-03-09 半導体発光素子 Expired - Fee Related JP4445292B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004065496A JP4445292B2 (ja) 2002-02-08 2004-03-09 半導体発光素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002032073 2002-02-08
JP2004065496A JP4445292B2 (ja) 2002-02-08 2004-03-09 半導体発光素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2003566952A Division JP3613348B2 (ja) 2002-02-08 2003-02-07 半導体発光素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2004253811A JP2004253811A (ja) 2004-09-09
JP2004253811A5 JP2004253811A5 (enExample) 2005-11-24
JP4445292B2 true JP4445292B2 (ja) 2010-04-07

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JP2004065496A Expired - Fee Related JP4445292B2 (ja) 2002-02-08 2004-03-09 半導体発光素子

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JP (1) JP4445292B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7582910B2 (en) * 2005-02-28 2009-09-01 The Regents Of The University Of California High efficiency light emitting diode (LED) with optimized photonic crystal extractor
JP5224154B2 (ja) * 2005-10-28 2013-07-03 日亜化学工業株式会社 半導体素子
JP5177130B2 (ja) 2007-03-23 2013-04-03 住友電気工業株式会社 フォトニック結晶レーザおよびフォトニック結晶レーザの製造方法
KR101341374B1 (ko) * 2007-07-30 2013-12-16 삼성전자주식회사 광자결정 발광소자 및 그 제조방법
JP5356088B2 (ja) * 2009-03-27 2013-12-04 古河電気工業株式会社 半導体レーザ、レーザ光の発生方法、およびレーザ光のスペクトル線幅の狭窄化方法
JP5627361B2 (ja) 2010-09-16 2014-11-19 キヤノン株式会社 ２次元フォトニック結晶面発光レーザ
WO2014136962A1 (ja) 2013-03-07 2014-09-12 浜松ホトニクス株式会社 レーザ素子及びレーザ装置
DE112014001152B9 (de) * 2013-03-07 2025-10-16 Hamamatsu Photonics K.K. Laserelement mit einer photonischen Kristallschicht und Laservorrichtung
WO2014175447A1 (ja) * 2013-04-26 2014-10-30 浜松ホトニクス株式会社 半導体レーザ装置
WO2015008627A1 (ja) * 2013-07-16 2015-01-22 浜松ホトニクス株式会社 半導体レーザ装置
GB201607996D0 (en) * 2016-05-06 2016-06-22 Univ Glasgow Laser device and method for its operation
JP7097567B2 (ja) * 2018-02-28 2022-07-08 セイコーエプソン株式会社 発光装置およびその製造方法、ならびにプロジェクター
JP6891327B1 (ja) * 2020-09-25 2021-06-18 浜松ホトニクス株式会社 光源モジュール
US20230102430A1 (en) * 2020-01-20 2023-03-30 Hamamatsu Photonics K.K. Light source module
EP4564619A1 (en) * 2022-07-29 2025-06-04 Sumitomo Electric Industries, Ltd. Photonic crystal surface-emitting laser and method for manufacturing same

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