JP4445292B2 - Semiconductor light emitting device - Google Patents

Description

The present invention relates to a surface emitting semiconductor light emitting element of using a photonic crystal grown on the substrate.

    As a conventional semiconductor light emitting element using a photonic crystal, for example, JP-A-11-330619, JP-A-2001-308457, JP-A-2001-9800 (US Patent Application Publication No. 2002/0109134). ), JP-A-63-205984 (US Pat. No. 4,847,844), JP-A-2002-062554, and the like.

  Similarly, it is also disclosed in “Imada et al .: Applied Physics Letters 75 (1999) 316 (Appl. Phys. Lett. 75 (1999) 316)”. FIG. 1 is a perspective view showing a configuration of a conventional semiconductor light emitting element using a photonic crystal disclosed in “Imada et al.”. As shown in FIG. 1, an n-type InP photonic crystal layer 52, an n-type InP lower cladding layer 53, a quantum well active layer 54 made of InGaAsP, and a p-type InP upper cladding layer 55 are sequentially formed on an n-type InP substrate 51. Are stacked. A lower electrode 57 is formed on the back surface of the n-type InP substrate 51, and a circular upper electrode 56 having a diameter of about 350 μm is formed on the surface of the p-type InP upper cladding layer 55. Further, a plurality of circular recesses 59 having a diameter of about 0.2 μm are periodically formed in the n-type InP photonic crystal layer 52.

  While the n-type InP photonic crystal layer 52 is grown on the n-type InP substrate 1 so as to form a plurality of recesses 59, the p-type InP upper cladding layer 55, the quantum well active layer 54, Then, the n-type InP lower cladding layer 53 is grown in this order. Then, the n-type InP lower cladding layer 53 and the surface of the n-type InP photonic crystal layer 52 are brought into contact with each other, and are fused by annealing in a hydrogen atmosphere (see arrow 60). Thereafter, the substrate on which the p-type InP upper cladding layer 55 is grown is removed, a circular upper electrode 56 is formed on the surface thereof, and a lower electrode 57 is formed on the back surface of the n-type InP substrate 1 as described above. A semiconductor light emitting device configured as described above is manufactured.

  In the semiconductor light emitting device manufactured as described above, when a current is passed between the upper electrode 56 and the lower electrode 57, stimulated emission is confirmed at a threshold current of 2A or more, and a single mode having an oscillation wavelength of 1.3 μm. was gotten. Further, light emission was obtained from the outer peripheral portion 58 of the upper electrode 56.

  Thus, the conventional semiconductor light emitting device has a problem that the threshold current is relatively large at 2A.

  Further, since the upper electrode 56 is a circular electrode, there is a problem that the plane of polarization of light has various directions. Although it is conceivable to make the plane of polarization uniform by making the shape of the recess 59 elliptical, it is very difficult to form a plurality of elliptical recesses 59 having the same shape.

  Further, even with light having the same polarization plane, there is a problem that the emission wavelength becomes unstable due to the presence of two stable emission modes.

  Furthermore, as described above, semiconductor light emitting devices are manufactured by fusing crystals together, but there is a problem that it is difficult to fuse the entire surface of a large-diameter substrate.

The present invention has been made in view of such circumstances, and its object is the threshold current is low and to provide a semiconductor light-emitting element which polarization plane of the light is controlled.

In order to achieve this object, a semiconductor light emitting device according to the present invention includes a semiconductor substrate, a lower cladding layer formed on the semiconductor substrate, and a resonator in a direction parallel to the semiconductor substrate. A semiconductor laminate including an active layer and an upper clad layer, a striped upper electrode connected to the upper clad layer and extending in a resonator direction, and a lower electrode connected to the lower clad layer, The semiconductor stacked body has a photonic crystal structure in which a plurality of concave portions or convex portions are periodically arranged in the resonator direction, and at least a part of the photonic crystal structure overlaps with the upper electrode in a plan view. In addition, it is formed so as to be aligned with the upper electrode in the resonator direction, and the period of the concave portion or convex portion is a photonic band gap of the photonic crystal structure. High energy end or low-energy end, configured as an energy of the spontaneous emission light coincides, when a predetermined voltage is applied between the lower electrode and the upper electrode, the photonic crystal structure of Light is emitted from a region that does not overlap the upper electrode in plan view.

  In the semiconductor light emitting device according to the invention, it is preferable that the concave portion or the convex portion is formed in the upper clad layer.

  In the semiconductor light emitting device according to the invention, it is preferable that the concave portion or the convex portion is formed across the upper cladding layer, the active layer, and the lower cladding layer.

  In the semiconductor light emitting device according to the invention, it is preferable that a shape of the concave portion or the convex portion is a columnar shape.

  In the semiconductor light emitting device according to the invention, it is preferable that the shape of the concave portion or the convex portion is a flat plate shape.

  In the semiconductor light emitting device according to the invention, the resonator preferably has a width of 2 μm or more and 10 μm or less.

  In the semiconductor light emitting device according to the present invention, the length of the resonator is preferably 20 μm or more and 50 μm or less.

  In the semiconductor light emitting device according to the present invention, the resonator direction is preferably a <110> direction or a <−110> direction.

Further, in the semiconductor light emitting device according to the invention, the recesses or projections are arranged in a square lattice shape, one arrangement direction of the recesses or projections is the same as the resonator direction, and the other arrangement direction is It is preferable to be orthogonal to the resonator direction.
In the semiconductor light emitting device according to the invention, it is preferable that an interval between adjacent concave portions or convex portions in the one arrangement direction is different from an interval between adjacent concave portions or convex portions in the other arrangement direction.
In the semiconductor light emitting device according to the invention, it is preferable that a distance between adjacent concave portions or convex portions in the one arrangement direction is larger than an interval between adjacent concave portions or convex portions in the other arrangement direction. .

  In the semiconductor light emitting device according to the present invention, it is preferable that reflective films are formed on both end faces of the semiconductor stacked body.

  In the semiconductor light emitting device according to the invention, it is preferable that a photonic crystal structure including a plurality of concave portions or convex portions arranged at a predetermined interval is formed around the semiconductor stacked body.

  In the semiconductor light emitting device according to the invention, it is preferable that the concave portion or the convex portion is formed over the entire upper surface of the semiconductor stacked body.

  In the semiconductor light emitting device according to the invention, the region that does not overlap with the upper electrode in a plan view of the photonic crystal structure is preferably a central portion of the semiconductor stacked body.

  Further, in the semiconductor light emitting device according to the invention, the interval between some of the recesses or projections among the recesses or projections adjacent in the resonator direction is smaller than the interval between the other recesses or projections. It is preferable to be larger by (effective refractive index × 4).

  In the semiconductor light emitting device according to the invention, it is preferable that the semiconductor light emitting device includes a plurality of the semiconductor stacked bodies, and the plurality of the semiconductor stacked bodies are arranged so as to cross each other.

  The above object, other objects, features, and advantages of the present invention will become apparent from the following detailed description of the preferred embodiments with reference to the accompanying drawings.

  The semiconductor light emitting device of the present invention can reduce the threshold current and control the plane of polarization of light.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(Embodiment 1)
FIG. 2 is a plan view showing the configuration of the semiconductor light emitting element according to Embodiment 1 of the present invention. 3 is a view taken along the line III-III in FIG. 2, and FIG. 4 is a view taken along the line IV-IV in FIG. Note that the emission wavelength of the semiconductor light emitting device of this embodiment is 1.3 μm.

As shown in FIGS. 2 to 4, a stripe structure 10 is formed on the n-type InP substrate 1. The stripe structure 10 includes an n-type InP lower cladding layer 3 (thickness 100 nm), an InGaAsP / InGaAsP quantum well active layer 4 (hereinafter simply referred to as an active layer 4), and a p-type InP upper cladding layer 5 (thickness 50 nm) in this order. It is configured by stacking. Here, the active layer 4 includes 5 pairs of In _0.9 Ga _0.1 As _0.2 P _0.8 barrier layer (thickness 10 nm, composition wavelength 1.1 μm, lattice strain 0%), In _0.9 Ga _0.1 As _0.5 P _0.5 well layer (thickness 4 nm). , Quantum well wavelength 1.3 μm, lattice strain 1%), and a strained quantum well structure including a waveguide (guide) layer. The end face of the stripe structure 10 is cleaved, and as a result, the active layer 4 functions as a resonator in a direction parallel to the n-type InP substrate 1. The p-type InP upper cladding layer 5 is formed with a photonic crystal structure 2 obtained by arranging a plurality of cylindrical recesses 9 in a square lattice pattern. Of the two arrangement directions of adjacent recesses 9 (the α direction and the β direction in FIG. 2), one of the directions (the α direction in FIG. 2) coincides with the resonator direction.

  In the present specification, the “resonator direction” means a direction represented as the α direction in FIG. 2, that is, a longitudinal direction of a rectangular resonator.

  A lower electrode 7 is formed on the back surface of the n-type InP substrate 1. On the other hand, on the surface of the p-type InP upper cladding layer 5 and in a region where the photonic crystal structure 2 is not formed in a plan view, the striped upper portion narrower than the p-type InP upper cladding layer 5 is formed. An electrode 6 is formed. Here, the photonic crystal structure 2 and the upper electrode 6 are arranged in the resonator direction in a plan view.

  Note that, when the width of the active layer 4, that is, the resonator is as narrow as about 2 μm, the external differential quantum efficiency increases, but the output light intensity becomes saturated as the injection current increases. On the other hand, when the width W of the stripe structure is increased to about 10 μm, light can be confined in the lateral direction (width direction of the resonator) in the photonic crystal structure 2, so that output saturation can be suppressed. In the region other than the crystal structure 2, the light mode becomes unstable. Therefore, when the coupling coefficient of the photonic crystal structure 2 is relatively small, there is a limit to the increase in the width W of the resonator. For these reasons, the width W of the resonator is preferably about 2 μm to 10 μm.

  Next, a method for manufacturing the semiconductor light emitting device of the present embodiment configured as described above will be described.

  FIG. 5 is an explanatory view for explaining the method for manufacturing the semiconductor light emitting device according to the first embodiment of the present invention. FIG. 5A is a cross-sectional view showing the configuration of the semiconductor light emitting device, and FIGS. ) Is a plan view showing the configuration of the semiconductor light emitting device.

  As shown in FIG. 5A, an n-type InP lower cladding layer 3 (thickness 100 nm) doped with Si, an undoped active layer 4 (thickness 14 nm), and p doped with Zn on an n-type InP substrate 1. The type InP upper clad layer 5 (thickness 50 nm) is epitaxially grown by a known crystal growth method such as MOVPE (Metalorganic vapor phase epitaxy) method. Here, the reason why the active layer 4 is undoped without intentionally adding impurities is to suppress absorption of the valence band and absorption of free electrons.

Next, a plurality of cylindrical recesses 9 are formed by ICP dry etching in a circular shape using Cl ₂ gas and CH ₄ gas using the SiO ₂ film as an etching mask. In this case, as shown in FIG.5 (b), each recessed part 9 is formed so that it may rank with a square lattice form. A region where the plurality of recesses 9 are periodically arranged is the photonic crystal structure 2. The period of the recess 9 (interval between adjacent recesses) is approximately the same as the wavelength of light. Therefore, in the case of this embodiment, it is about 1.3 μm.

  Next, as shown in FIG. 5C, in order to form a stripe structure, the p-type InP upper cladding layer 5 to a part of the n-type InP substrate 1 are etched with a phosphoric acid etchant. Then, as shown in FIG. 5D, a striped Cr / Pt / Au electrode as the upper electrode 6 is formed on the surface of the p-type InP upper cladding layer 5, and an Au—Sn electrode is formed as the lower electrode (not shown). It vapor-deposits on the back surface of the n-type InP substrate 1, respectively. In this case, the upper electrode 6 is formed by lift-off so as to be formed on the surface of the p-type InP upper cladding layer 5 so as to be aligned with the photonic crystal structure 2 in the resonator direction in plan view.

  As described above, the plurality of recesses 9 are arranged in the form of a square lattice, but as shown in FIG. 5D, the α direction in the arrangement direction of the recesses 9 is arranged to coincide with the resonator direction. .

  Through the above steps, the semiconductor light emitting device of this embodiment can be manufactured.

  In the case where the recess 9 is formed as described above and the length (α direction) of the photonic crystal structure 2 is 2 μm or more, the active layer 4 is not etched as shown in FIG. In addition, it is preferable to stop the etching in the p-type InP upper cladding layer 5. Thereby, since the damage given to the active layer 4 can be suppressed, it becomes possible to improve luminous efficiency.

Further, when the length (α direction) of the photonic crystal structure 2 is 10 μm or less, it is preferable to etch through the active layer 4 to the n-type InP lower cladding layer 3 as shown in FIG. Thus, when the length of the photonic crystal structure 2 is relatively small, such as 10 μm or less, the effect of the photonic crystal becomes small. Therefore, in order to facilitate coupling of light with the photonic crystal, the n-type InP lower cladding layer 3 is etched so that most of the light distribution is diffracted by the photonic crystal. In this case, although damage is caused by dry etching, an increase in threshold current can be suppressed by etching the damaged region with CH ₄ or SF ₆ gas after etching with Cl ₂ gas. .

  In the case of the present embodiment, the resonator direction is the <110> or <−110> direction that is excellent in cleavage. However, when the resonator is formed by dry etching, the direction of the resonator is not particularly limited. However, in order to improve the perpendicularity of the etching end face, the resonator direction is preferably the <110> or <−110> direction.

  The length of the resonator is about 20 μm to 50 μm. This is because the light intensity that is diffracted and extracted in the photonic crystal structure 2 is small, so that the loss at the end face of the stripe structure 10 is suppressed by an end face coat or the like, thereby making the optical loss extremely small compared to a normal laser. This is because sufficient light can be emitted to the outside even if the gain of the short resonator is reduced. Here, when the length of the resonator is 50 μm, the threshold current is about 20 μA, and when it is also 20 μm, there is no threshold current value, and the optical output increases in direct proportion to the injection current. I understood.

  In the present embodiment, the cylindrical concave portion is periodically formed as the photonic crystal, but it may be a cylindrical convex portion. The reason why the concave portion is used instead of the columnar convex portion in this embodiment is that the concave portion has a smaller volume for dry etching, and therefore damage due to etching can be suppressed. Moreover, when it is set as a convex part, it is thought that there exists a problem in intensity | strength. On the other hand, when the cylindrical convex portion is used, the equivalent refractive index is small, so that there is a merit that the period when arranging the concave portion can be increased compared to the concave portion. Therefore, when the wavelength of light is as short as 0.85 μm, for example, it is preferable to use a convex portion. The same applies to the other embodiments described later.

  In addition, you may make it obtain a photonic crystal by periodically forming a prismatic recessed part or convex part instead of a column shape. However, it is difficult to produce a prism with a uniform shape as compared with a cylindrical case. This also applies to a cylindrical concave portion or convex portion having an elliptical cross section, and the variation in shape increases as the ellipticity increases. Therefore, in the present embodiment, the cross section is a circular cylinder. The same applies to the other embodiments described later.

  The operation of the semiconductor light emitting device manufactured as described above will be described. A current is passed through the active layer 4 by applying a voltage between the upper electrode 6 and the lower electrode 7 with the upper electrode 6 at a positive potential and the lower electrode 7 at a negative potential. As a result, electrons are injected from the n-type region of the active layer 4 to the p-type region, and holes are injected from the p-type region to the n-type region. The injected electrons and holes cause stimulated emission in the vicinity of the pn junction formed at the interface between the n-type region and the p-type region of the active layer 4. As a result, light is generated in the active layer 4. This light is amplified in the active layer 4 and diffracted in the direction perpendicular to the n-type InP substrate 1 in the photonic crystal structure 2. As a result, light 8 is emitted from the photonic crystal structure 2 in a direction perpendicular to the n-type InP substrate 1.

  FIG. 7 is an explanatory diagram for explaining the light emission state of the semiconductor light emitting device according to the first embodiment of the present invention. FIG. 7A shows the relationship between the wave number of light and energy in a region where a photonic crystal is not formed. (B) is a figure which shows the relationship between the wave number of light and energy in a photonic crystal structure.

  As shown in FIG. 7A, in the region where the photonic crystal is not formed, the energy increases linearly as the wave number increases. FIG. 7A shows the relationship between energy and wave number in a region where the energy of light is small, and the relationship after being folded by the periodic structure. For this reason, the energy increases as the wave number decreases, then turns back again, and the energy increases as the wave number increases. As a result, since the perturbation due to the photonic crystal does not occur, the wave number and energy continuously change, and no photonic band gap is formed. In FIG. 7A, when the light intensity is the horizontal axis and the wavelength is the vertical axis, the spontaneous emission light shows a Lorentz distribution.

On the other hand, as shown in FIG. 7B, in the photonic crystal structure, since a perturbation due to the photonic crystal occurs, a photonic band gap (PBG) is formed. Spontaneously emitted light cannot exist within this photonic band gap. On the other hand, spontaneous emission light can exist at the high energy edge and below the low energy edge of the photonic band gap. The angular velocity ω ₀ of light corresponding to the center energy of the photonic band gap is expressed as n _eff · ω ₀ / c = π / Λ, where Λ is the period of the photonic crystal (interval between adjacent recesses 9). It is represented by Here, n _eff represents the equivalent refractive index of light, and c represents the speed of light. The magnitude Δω of the photonic band gap is Δω = 2 kc / n _eff . Here, k represents a coupling coefficient. When the high energy edge of the photonic band gap matches the energy of spontaneous emission light, in addition to the relationship between electrons and light that generate spontaneous emission light, a relationship due to perturbation of the photonic crystal is added. The transition probability between electrons and light is also perturbed. As a result, as shown in FIG. 7B, the spontaneous emission light and the photonic band gap are coupled to obtain a high spontaneous emission light intensity due to super radiation. In this case, the half-value width of the spontaneous emission light is 0.2 nm or less, and the emission intensity is about 30 times.

Although in FIG. 7 (b) is consistent and the energy of the high energy end and spontaneous emission light of the photonic band gap, and the energy of the photonic low energy end of the band gap and spontaneous emission light matches Similar results can be obtained even if However, when a plurality of recesses constituting the photonic crystal are arranged in a square lattice shape, it to match the energy of the photonic high energy end of the band gap and spontaneous emission light, the band gap is far away Therefore, there is an advantage that there is no influence of degeneration.

  In the case of the semiconductor light emitting device of the present embodiment, there is no current value that is a threshold value, and the light output increases according to the injection current. It was clarified that the external differential quantum efficiency is about 60% when the wavelength is 1.3 μm. Further, it was found that when the injection current is 2 mA or more, the operation speed is 10 GHz. Since coherent light having the same frequency and the same phase can be obtained from the light emitting region, the spot can be narrowed down to a value corresponding to the NA of the lens. Further, the polarization plane of the TE light is the stripe direction (resonator direction) of the stripe structure. It was found that when a relatively strong current is injected in the form of a pulse, a super-radiation phenomenon in which strong picosecond light emission occurs is also obtained.

  Note that although the semiconductor substrate is an InP crystal in this embodiment mode, a GaAs, GaN, or GaP crystal can be used if the photonic crystal manufacturing accuracy is improved. The semiconductor substrate is n-type, but may be p-type. Since the resistance value of the n-type crystal is generally lower, the current is uniformly injected into the active layer when the photonic crystal between the active layer and the n-type crystal is n-type. preferable.

As described above, the length (α direction) of the photonic crystal structure is 2 μm or more in the case of the configuration shown in FIG. 3 (the concave portion 9 is formed only in the p-type InP upper cladding layer 5). In the case of the configuration shown in FIG. 6 (the recess 9 is formed from the p-type InP upper cladding layer 5 to the middle of the n-type InP lower cladding layer 3), it is preferably 10 μm or less. Therefore, when the length (α direction) of the photonic crystal structure is 2 μm or more and 10 μm or less, the configuration shown in FIG. 3 or the configuration shown in FIG. 6 may be used. Which is preferred depends on the magnitude of damage caused by dry etching and the flatness of the shape of the etched surface. For example, the structure shown in FIG. 6 can be obtained by forming a surface with good flatness with Cl ₂ gas and removing the damaged region with CF ₄ gas during dry etching.

(Embodiment 2)
The second embodiment has a photonic crystal as in the first embodiment, but the period of the photonic crystal in the direction of the resonator and the period of the photonic crystal in the direction orthogonal to the direction of the resonator. A semiconductor light emitting element configured to be different from each other will be described.

  FIG. 8 is a plan view showing the configuration of the semiconductor light emitting element according to Embodiment 2 of the present invention. As shown in FIG. 8, the photonic crystal structure 2 is formed by arranging a plurality of recesses 9 in a square lattice pattern. Here, the period (interval between adjacent concave parts 9) F1 of the concave part 9 in the resonator direction is longer than the period F2 of the concave part 9 in the direction orthogonal to the resonator direction. Reference numeral 13 in the figure denotes a growth region when the p-type InP upper cladding layer is selectively grown as will be described later. Since the other configuration of the semiconductor light emitting element of the present embodiment is the same as that of the first embodiment, the same reference numerals are given and description thereof is omitted.

  Next, a method for manufacturing the semiconductor light emitting device of the present embodiment configured as described above will be described. Note that although a method for manufacturing a photonic crystal using dry etching is described in Embodiment Mode 1, a method for manufacturing a photonic crystal using selective growth is described in this embodiment mode. Needless to say, this embodiment can also be manufactured by a method using dry etching as in the case of Embodiment 1. In all the embodiments shown in this specification, a photonic crystal can be manufactured by any of a method using dry etching and a method using selective growth.

  FIG. 9 is an explanatory diagram for explaining a method for manufacturing a semiconductor light emitting device according to the second embodiment of the present invention. FIG. 9A is a cross-sectional view showing the configuration of the semiconductor light emitting device, and FIGS. ) Is a plan view showing the configuration of the semiconductor light emitting device.

As shown in FIG. 9A, an n-type InP lower cladding layer 3 (thickness 100 nm) doped with Si, an undoped active layer 4 (thickness 14 nm), and p doped with Zn on an n-type InP substrate 1. The type InP upper cladding layer 5 (thickness 10 nm) is epitaxially grown by a known crystal growth method such as MOVPE. Further, the SiO ₂ film 12 is formed on the p-type InP upper clad layer 5.

Next, as shown in FIG. 9B, a p-type InP upper cladding layer 5 (thickness: 100 nm) is selectively grown using the SiO ₂ film 12 as a selective growth mask to form a plurality of cylindrical shapes arranged in a square lattice pattern. The photonic crystal structure 2 is formed by forming the recess 9. In this case, the recesses 9 are arranged so that the period F1 of the recesses 9 in the same direction as the resonator direction is longer than the period F2 of the recesses 9 in the direction orthogonal to the length direction.

  When the photonic crystal structure 2 is formed as described above, facets may be formed during selective growth. However, facets were not formed when the film thickness was as small as about 200 nm or less.

  Next, as shown in FIG. 9 (c), a portion of the n-type InP substrate 1 is etched with a phosphoric acid etchant to form a stripe structure. In the figure, reference numeral 13 denotes a growth region when the p-type InP upper cladding layer is selectively grown as described above. Then, as shown in FIG. 9 (d), a Cr / Pt / Au electrode is deposited on the surface of the p-type InP upper cladding layer 13 in the stripe structure 10 as the upper electrode 6. Although not shown, an Au—Sn electrode is deposited on the back surface of the n-type InP substrate 1 as the lower electrode 7. In this case, the upper electrode 6 is formed by lift-off so as to be formed on the surface of the p-type InP upper cladding layer 5 so as to be aligned with the photonic crystal structure 2 in the resonator direction in plan view.

  Through the above steps, the semiconductor light emitting device of this embodiment can be manufactured.

By the way, in order to obtain a configuration in which the concave portion 9 is formed partway through the n-type InP lower cladding layer 3 as shown in FIG. As described above, the n-type InP lower cladding layer 3, the active layer 4, and the p-type InP upper cladding layer 5 may be selectively grown using the SiO ₂ film as a selective growth mask. In this case, since facets are formed in the vicinity of the selective growth mask, the film thickness of each layer is reduced, the breakdown voltage is lowered, and there is a possibility that a leak current is generated. Therefore, it is preferable to provide a step of etching and removing a region having a small film thickness. Specifically, after the selective growth process is completed, a region having a small film thickness is etched with CH ₄ or SF ₆ gas. Thereby, an increase in threshold current can be prevented.

  In this embodiment, the columnar concave portion 9 is provided, but a columnar convex portion may be provided. However, in the case of a convex shape, an isolated columnar crystal is selectively grown. In this case, the growth of each convex part proceeds independently. As a result, there is a problem from the viewpoint of securing the stability during selective growth because the situation in which the heights of the respective convex portions differ easily occurs. In addition, when the growth rate is relatively high, facets are formed at the tips of the convex portions, and there is a problem that the flat portions are not flat. Therefore, it is necessary to carefully select the selective growth conditions and to produce a photonic crystal structure having a columnar convex portion by optimizing the growth conditions such as lowering the growth temperature.

  In the semiconductor light emitting device manufactured as described above, stimulated emission occurs in the active layer 4 when a voltage is applied between the upper electrode 6 and the lower electrode 7 as in the case of the first embodiment. As a result, light is generated in the active layer 4. This light is amplified in the active layer 4 and diffracted in the direction perpendicular to the n-type InP substrate 1 in the photonic crystal structure 2. As a result, light is emitted from the photonic crystal structure 2 in a direction perpendicular to the n-type InP substrate 1.

  FIG. 10 is an explanatory diagram for explaining the light emission state of the semiconductor light emitting device according to the second embodiment of the present invention. FIG. 10A shows the relationship between the wave number and energy of light in the photonic crystal structure in the resonator direction. (B) is a figure which shows the relationship between the wave number and energy of the light of a photonic crystal structure in the direction orthogonal to the resonator direction.

In the case of the present embodiment, in the resonator direction, the period Λ of the photonic crystal is set so that the wavelength of the spontaneous emission light coincides with the high energy end of the photonic band gap. Here, in the direction orthogonal to the resonator direction, since the period Λ of the photonic crystal is made smaller than in the same direction as the resonator direction, n _eff · ω / c = π / Λ As shown in FIGS. 10A and 10B, the center energy (equivalent to ω) of the photonic band gap increases.

  As shown in FIGS. 10A and 10B, the spontaneous emission light and the band edge are coupled (coupled) in the resonator direction, but in the direction perpendicular to the resonator direction, the wavelength of the spontaneous emission light is It will be located inside the photonic band gap. Therefore, the spontaneous emission light does not propagate in the direction perpendicular to the resonator direction. As a result, the leakage of light to the outside of the stripe structure is reduced, so that oscillation at a low threshold current is achieved compared to the case where the period of the photonic crystal in the resonator direction and the direction perpendicular to the resonator direction is equal. Can be realized.

  Further, in the semiconductor light emitting device of the present embodiment, the polarization plane can be controlled even if a cylindrical recess having a perfect cross section is used. In the first embodiment, it has been shown that the TE mode is formed in the direction of the resonator, but there is a problem that the stability of the mode is lowered when the width of the stripe structure is increased. In the case of the present embodiment, by changing the pitch of the photonic crystal to form the photonic band gap in the direction perpendicular to the resonator direction, the TE mode cannot exist in this perpendicular direction. Thereby, even when the width of the stripe structure is large, the TE mode can be stably induced in the resonator direction.

  By the way, when performing selective growth, a facet is formed at the time of growth, so that a rectangular structure can be manufactured with good reproducibility. In particular, when the convex portion is selectively grown, the convex portion having excellent shape uniformity can be produced by performing facet growth. Therefore, in the case where the convex portions are produced by selective growth by optimizing the growth conditions, a photonic crystal structure composed of prismatic convex portions can be easily obtained.

(Embodiment 3)
In Embodiment 3, a semiconductor light emitting element capable of preventing spontaneous emission light and stimulated emission light from leaking in the direction of the resonator by forming a reflection film that reflects light on the end face of the stripe structure will be described.

  11A and 11B are diagrams showing a configuration of a semiconductor light emitting element according to Embodiment 3 of the present invention, in which FIG. 11A is a plan view showing the configuration, and FIG. 11B is a view taken along line AA in FIG. It is. As shown in FIGS. 11A and 11B, the insulating multilayer thin film 11 made of alumina and titania is formed on both end faces of the stripe structure 10. Since the other configuration of the semiconductor light emitting element of the present embodiment is the same as that of the first embodiment, the same reference numerals are given and description thereof is omitted.

  Next, a method for manufacturing the semiconductor light emitting device of the present embodiment configured as described above will be described.

  First, the photonic crystal structure 2 is produced in the same manner as in the first embodiment. Next, both end surfaces of the stripe structure are vertically formed by dry etching, and then, as shown in FIGS. 11A and 11B, insulating multilayer thin films 11 made of alumina and titania are laminated on both end surfaces, respectively. Let Thereafter, the elements are separated along the dry-etched grooves. In the present embodiment, in order to deposit (deposit) the insulator multilayer thin film 11 on the vertical end face of the stripe structure 10, the insulator multilayer thin film 11 is formed by laminating a highly reflective multilayer film using ECR sputtering. Formed. When the number of layers of the insulating multilayer thin film 11 was 4, a reflectance of 98% was obtained. By forming such a highly reflective insulator multilayer thin film 11, the reflection loss at the end face of the stripe structure 10 can be greatly reduced. As a result, as shown in the first embodiment, the threshold current can be set to about 20 μm in a short resonator having a length of about 50 μm.

  However, when the insulating multilayer thin film 11 is formed on a vertical surface, there is a problem that the thickness of the insulating thin film becomes non-uniform when depositing each layer, and reflection loss may increase. Therefore, the following configuration is preferable.

  12A and 12B are diagrams showing a configuration of a modification of the semiconductor light emitting element according to Embodiment 3 of the present invention, in which FIG. 12A is a plan view showing the configuration, and FIG. 12B is a BB line in FIG. It is an arrow view. In this modification, a reflecting mirror is constituted by a photonic crystal instead of the insulating multilayer thin film.

  As shown in FIGS. 12A and 12B, from the p-type InP upper clad layer 5 to the n-type InP substrate 1, separation grooves 18 are formed in a stripe shape in plan view. A photonic crystal structure 2 and an upper electrode 6 are formed on the surface of the p-type InP upper cladding layer 5 in the region 17 surrounded by the isolation groove 18. On the other hand, cylindrical reflective recesses 15 are formed in a square lattice shape in the p-type InP upper cladding layer 5 outside the region 17 so as to surround the region 17 surrounded by the separation groove 18. Here, in both the α direction and the β direction, the period of the reflecting recess 15 (the interval between adjacent reflecting recesses 15) is shorter than the period of the recess 9. The reflecting recess 12 is formed from the upper cladding layer 5 to the middle of the lower cladding layer 3. In this way, the region where the reflective recess 12 is formed becomes a reflector region. The reason why the region 17 and the reflector region are separated by the separation groove 18 is to suppress the leakage of current from the region 17 to the reflector region.

  When the reflector is formed by forming an insulating multilayer thin film on the end face of the stripe structure as in the above-described example, only the light in the same direction as the resonator direction can be reflected. There is no problem. However, when spontaneous emission light is controlled as in the present invention, there is a problem that the spontaneous emission light in a direction slightly deviated from the resonator direction cannot be sufficiently reflected. On the other hand, in the case of this modification, when the reflecting concave portion 12 is provided for about four cycles on one side in the reflecting mirror region, a reflectance of 98% is obtained, as shown in FIG. It was found that a reflectance of about 95% can be obtained even when two periods are provided. As a result, as shown in the first embodiment, it is possible to realize laser oscillation without a threshold current in a short resonator having a length of about 20 μm.

(Embodiment 4)
Embodiment 4 shows a semiconductor light-emitting element that can prevent a mode from becoming unstable due to fluctuations in the phase of light on a reflecting surface by forming a photonic crystal structure over the entire stripe structure. .

  13A and 13B are diagrams showing a configuration of a semiconductor light emitting element according to Embodiment 4 of the present invention, in which FIG. 13A is a plan view showing the configuration, and FIG. 13B is a view taken along line CC in FIG. It is.

  As shown in FIGS. 13A and 13B, cylindrical recesses 9 are formed in a square lattice shape over the entire p-type InP upper cladding layer 5 having a stripe shape. In addition, since the other structure of the semiconductor light emitting element of this Embodiment is the same as that of the case of Embodiment 3, it attaches | subjects the same code | symbol and abbreviate | omits description.

  Next, a method for manufacturing the semiconductor light emitting device of the present embodiment configured as described above will be described.

  First, the photonic crystal structure 2 is produced in the same manner as in the first embodiment. At this time, a cylindrical recess 9 is formed over the entire upper surface of the stripe structure 10 by dry etching. Next, a striped upper electrode 6 is deposited on a part of the surface of the photonic crystal structure 2. Then, in order to form a resonator, both end faces of the stripe structure 10 are vertically formed by dry etching, and then an insulator multilayer thin film 11 made of alumina and amorphous silicon is laminated on both end faces. Thereafter, the elements are separated along the dry-etched grooves. Thereby, the semiconductor light emitting element of this Embodiment shown to Fig.13 (a) and (b) can be obtained.

In the step of forming the upper electrode, in order to prevent the electrode metal from entering the inside of the recess 9, instead of depositing all electrode materials, Cr / Pt is thinly formed on the photonic crystal structure 2. After depositing and lowering the contact resistance, an upper electrode is formed by adhering a metal foil made of Pt / Au. By the way, in the case where the concave portion 9 is formed partway through the lower cladding layer 3 as shown in FIG. Therefore, in this case, a thin SiO ₂ film is deposited on the surface of the photonic crystal structure 2, and only the surface of the flat portion of the SiO ₂ film is removed by etching by ICP dry etching using CHF ₃ and then the upper electrode 6 is removed. Is preferably deposited.

  In the semiconductor light emitting device manufactured as described above, stimulated emission occurs in the active layer 4 when a voltage is applied between the upper electrode 6 and the lower electrode 7 as in the case of the first embodiment. As a result, light is generated in the active layer 4. This light is amplified in the active layer 4 and diffracted in the direction perpendicular to the n-type InP substrate 1 in the photonic crystal structure 2. As a result, light is emitted in a direction perpendicular to the n-type InP substrate 1 from a region that does not overlap the upper electrode 6 of the photonic crystal structure 2 in plan view.

  As described above, by providing the photonic crystal over the entire upper surface of the stripe structure 10, the standing wave formed in the resonator is stabilized even when the semiconductor light emitting element is modulated at high speed. This is because, when a modulation current is injected into the semiconductor light emitting device, the refractive index changes due to the carrier density variation inside the resonator, so that the standing wave is disturbed in the region where the photonic crystal is not present. In the present embodiment, the photonic crystal structure 2 is formed over the entire upper surface of the stripe structure 10 to forcibly synchronize the perturbation of light with the period of the photonic crystal. Thereby, it was found that a stable light emission mode can be obtained even in the case of a modulation speed of about 40 GHz. However, when the length of the resonator (active layer 4) is as large as 100 μm or more, a distribution in the direction of the resonator is generated in the light density in the resonator, so that the operation speed is limited. Occurs. Therefore, in the present embodiment, it is preferable that the length of the resonator is 100 μm or less.

  By the way, in the case where the stability of the mode is required rather than lowering the threshold current, a part of the cylindrical recess 9 is made a flat recess 16 as shown in FIG. Is preferred. In FIG. 14A, a plurality of plate-like recesses 16 are formed in a region where the upper electrode 6 is formed. Here, the evaluation index of the mode stability includes the polarization plane stability. In the case of a two-dimensional photonic crystal in which cylindrical recesses 9 as shown in FIG. 13 (a) are arranged in a square lattice shape, light is also coupled in the β direction (direction perpendicular to the resonator direction). For this reason, the plane of polarization rotates due to fluctuations in the light distribution in the β direction, and the plane of polarization becomes unstable. On the other hand, in the case where the flat recess 16 is provided, the spontaneous emission light does not perturb in the β direction, and only the wave traveling in the α direction (resonator direction) is coupled. Therefore, the spontaneous emission light cannot be fully utilized, and the threshold current increases. However, since the light is perturbed with a uniform phase in the thickness direction of the stripe structure, the polarization plane does not rotate. As a result, the threshold current is about 0.1 mA, but output light having a constant polarization plane can be obtained regardless of the light output intensity.

  On the other hand, when mode stability is required rather than light intensity, as shown in FIGS. 14B and 14C, the upper electrode 6 is divided into two and both ends excluding the central portion of the stripe structure 10 are separated. Formed in the part. Thereby, the central part of the stripe structure 10 becomes a light output region. In order to obtain strong output light as shown in FIG. 14 (e), it is desirable to extract light from the vicinity of the reflecting surface where the light intensity in the resonator increases. However, in the vicinity of the end face, the intensity of light suddenly increases as it approaches the end face, so that there is a problem that hole burning occurs and the plane of polarization becomes unstable. Therefore, by providing the light emitting region in the center of the resonator (active layer 4) as shown in FIGS. 14B and 14C, the region where the photonic crystal exists becomes a region with low light intensity. The mode is stabilized because no burning occurs.

  Furthermore, in order to improve the stability of the polarization plane, a flat plate-like recess 16 may be provided over the entire top surface of the stripe structure as shown in FIG. However, in such a configuration, the plane of polarization is constant, but the output light cannot be sufficiently coupled with the light in the resonator, and the spontaneous emission light cannot be used effectively. The output decreases.

  In the present embodiment, the photonic crystal structure is configured by the columnar or flat concave portions, but the photonic crystal structure may be configured by columnar or flat convex portions. In this embodiment, the concave portion is used instead of the convex portion. The concave portion can suppress damage due to dry etching, and when forming an electrode on the photonic crystal, the concave portion is more crystalline. This is because the surface is continuous and flatter and the electrode can be easily formed. In particular, in the case of the present embodiment, if the photonic crystal structure is constituted by the convex portion, the electrode metal is also formed around the convex portion when the etching is performed up to the lower cladding layer or when the active layer is selectively grown. Since it may be vapor deposited and short circuit may occur, it is preferable to form a recess.

(Embodiment 5)
In the fifth embodiment, a semiconductor light emitting element capable of further stabilizing the light emission mode by introducing a phase shift structure into the photonic crystal structure will be described.

  15A and 15B are diagrams showing a configuration of a semiconductor light emitting element according to Embodiment 5 of the present invention, in which FIG. 15A is a plan view showing the configuration, FIG. 15B is a cross-sectional view showing a configuration of a modification, and FIG. ) Is a diagram showing a change in light intensity inside the stripe structure of the semiconductor light emitting device.

  As shown in FIG. 15A, the upper electrode 6 is formed on the upper surfaces of both end portions of the upper cladding layer 5, and is not formed in the central portion of the upper cladding layer 5. Therefore, in this embodiment, light is emitted from the central portion of the stripe structure 10 (resonator).

  Let L be the interval between the concave portions 9 adjacent to each other in the direction of the resonator located in the region other than the central portion of the resonator. On the other hand, the interval between the concave portions 9 adjacent to each other in the direction of the resonator located at the center of the resonator is increased to L + λ / 4n. Here, λ is the wavelength of light and n is the equivalent refractive index. Hereinafter, such a structure in which the interval between the recesses 9 is increased by λ / 4n is referred to as a λ / 4n shift structure.

  In addition, since it is the same as that of the case of Embodiment 3 about the other structure of the semiconductor light-emitting device of this Embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted.

  As described above, by introducing the λ / 4n shift structure in the resonator direction, the leftward wave and the rightward wave are coupled, and as shown in FIG. 15 (c), the light intensity at the center of the resonator is increased. Will increase. As a result, since the symmetry of the region where the light is emitted is improved, there is an advantage that the joining with the optical fiber becomes easy. Further, a stronger light output can be obtained by positioning the light emitting region at the center of the resonator.

  FIG. 16 is an explanatory diagram for explaining the light emission state of the semiconductor light emitting device according to the fifth embodiment of the present invention, and FIG. 16C is a photonic crystal structure in the α direction (resonator direction) of FIG. It is a figure which shows the relationship between the wave number and energy of light, and (b) is a figure which similarly shows the relationship between the wave number and energy of light of the photonic crystal structure in the β direction (direction orthogonal to the resonator direction). .

As described above, the energy of the light obtained by coupling the left wave and the right wave is equivalent to the case where a lattice defect originating from the λ / 4n shift is introduced as shown in FIG. Thus, an energy level of light corresponding to the defect order is formed in the photonic band gap. When the λ / 4n shift structure is introduced, the energy corresponding to the lattice defect is a value obtained by n _eff · ω ₀ / c = π / Λ. Therefore, this energy corresponds to the energy at the center of the photonic band gap energy. In addition, the energy of the photonic band gap is twice as large as Δω = 2 kc / n _{eff in} the case where the recesses 9 as shown in FIG. 14B in the fourth embodiment are arranged in a square lattice at equal intervals. Become. When arranged in a square lattice at equal intervals in this way, there is a possibility that light is emitted at the high energy end and the low energy end as shown in FIG. 10A, but a λ / 4n shift structure is introduced. As a result, light is emitted at the center of the photonic band gap where light is most easily emitted. Further, in the case of the λ / 4n shift structure, the high energy side and the low energy side of the defect are located in the photonic band gap, so that a uniform photonic band gap is not formed on one side shown in FIG. Compared with the lattice structure, the light is more strongly perturbed. Therefore, it is possible to amplify spontaneous emission light having a large Q value, a small half-value width, and a large intensity in a specific mode.

  In the present embodiment, it was found that light emission by strong perturbation is realized when the wavelength of spontaneous emission light matches the defect level. By adjusting the period in the α direction and the β direction (interval between adjacent recesses), a spontaneous emission light level can be present in the photonic band gap in the lateral direction (direction orthogonal to the resonator direction). It becomes like this. As a result, light cannot be propagated in the lateral direction, and single mode light emission is observed in the direction of the resonator.

  Note that the photonic crystal structure 2 may be formed of the cylindrical recess 9 as described above, but may be formed of a flat plate-shaped recess 16 as shown in FIG. When a flat concave portion is used, the threshold current is large, the light output intensity is increased, and the stability of the polarization plane is increased.

(Embodiment 6)
In Embodiment 6, a semiconductor light emitting element capable of further stabilizing the light emission mode by providing orthogonal stripe structures having a photonic crystal structure will be described.

  17A and 17B are diagrams for explaining a semiconductor light emitting device according to the sixth embodiment of the present invention, in which FIG. 17A is a plan view showing the configuration of the semiconductor light emitting device, and FIG. 17B is an operation of the semiconductor light emitting device. The figure which shows a principle and (c) is a figure which shows the behavior of an electric field.

  In the case of this embodiment, two structures similar to the stripe structure in the other embodiments are provided, and these structures are arranged orthogonally. More specifically, as shown in FIG. 17A, a stripe structure 10A and a stripe structure 10B having a photonic crystal structure are provided as in the other embodiments, and these stripe structures 10A are provided. And the stripe structure 10B are arranged in the α direction and the β direction (direction orthogonal to the α direction) so as to be orthogonal to each other. Further, the upper electrode 6 is not formed in the region B where the stripe structure 10A and the stripe structure 10B intersect, and the upper electrode 6 is formed on the other region A.

  Since the other configuration of the present embodiment is the same as that of the first embodiment, the same reference numerals are given and description thereof is omitted.

  Next, a method for manufacturing the semiconductor light emitting device of this embodiment will be described. FIG. 19 is an explanatory diagram for explaining a method for manufacturing a semiconductor light-emitting device according to Embodiment 6 of the present invention. FIG. 19A is a cross-sectional view showing the configuration of the semiconductor light-emitting device, and FIGS. ) Is a plan view showing the configuration of the semiconductor light emitting device.

  As described above with reference to FIG. 5A in the first embodiment, an n-type InP lower cladding layer 3 (thickness: 100 nm) doped with Si and an undoped active layer 4 (thickness) on the n-type InP substrate 1. 14 nm) and Zn-doped p-type InP upper cladding layer 5 (thickness 50 nm) is epitaxially grown by a known crystal growth method such as MOVPE (FIG. 19A).

Next, similarly to the first embodiment, a plurality of cylindrical recesses 9 are formed by ICP dry etching in a circular shape using Cl ₂ gas and CH ₄ gas using the SiO ₂ film as an etching mask. In this case, as shown in FIG. 19B, the recesses 9 are formed so as to be arranged in a square lattice pattern, and the recesses 9 are arranged in a cross shape. The region where the plurality of recesses 9 are arranged has a photonic crystal structure.

  Next, as in the first embodiment, in order to form a stripe structure, the p-type InP upper cladding layer 5 to a part of the n-type InP substrate 1 are etched with a phosphoric acid-based etchant (FIG. 19C). . Then, as shown in FIG. 19D, a Cr / Pt / Au electrode is used as the upper electrode 6 on the surface of the p-type InP upper cladding layer 5, and an Au—Sn electrode is used as the lower electrode (not shown) on the n-type InP. It vapor-deposits on the back surface of the board | substrate 1, respectively. In this case, the upper electrode 6 is formed by lift-off so as to be formed on the surface of the p-type InP upper cladding layer 5 and in a region other than the crossing portion. Thereby, the stripe structure 10A and the stripe structure 10B orthogonal to the stripe structure 10A are produced.

  Through the above steps, the semiconductor light emitting device of this embodiment can be manufactured.

  Next, the operating principle of the semiconductor light emitting device of this embodiment will be described with reference to FIG. In FIG. 17B, the vertical axis represents energy and the horizontal axis represents wave number. In the region A other than the region B where the stripe structures 10A and 10B intersect, the mode is localized in the direction of the resonator, so that the degeneracy is solved and the high energy end is split into two bands. On the other hand, in the region B where the stripe structures 10A and 10B intersect, the α direction and the β direction are symmetric, so that they degenerate to one energy level. Here, when the light in the region A is incident on the region B, the light A1 on the low energy side of the region A cannot be propagated because it is located in the band gap of the region B, and as a result, becomes a radiation mode. On the other hand, the light A2 on the high energy side is amplified to pass through the region B. In the region B ′ obtained by adjusting the diffraction efficiency κ and the period Λ of the region B, if the light A2 of the region A and the energy at the high energy end of the region B coincide with each other, only the light A2 of the region A is obtained. Is amplified and taken out to the outside. In this case, as shown in FIG. 17 (c), the behavior of the electric field is such that the plane of polarization rotates at the frequency of the light because the variation in the electric field in the α direction and the variation in the electric field in the β direction are orthogonal. In normal observation, the electric fields are orthogonal, and the magnetic field and the electric field overlap and are observed. As a result, the direction of the electric field is the direction of the resonator, that is, the direction of the periodic pointing vector of the photonic crystal structure. In the case of a normal photonic crystal element, there is a problem that the electric field deviates from the periodic pointing vector. However, in the case of the present embodiment, it has been found that there is an electric field orthogonal to the direction of the pointing vector.

  Note that the semiconductor light emitting element of this embodiment can be applied with various configurations as described above with reference to FIGS. 14A to 14D in the third embodiment.

  18A and 18B are diagrams showing a configuration of a modification of the semiconductor light emitting element according to Embodiment 6 of the present invention, in which FIG. 18A is a plan view showing the configuration of the modification, and FIG. 18B is another modification. It is a top view which shows the structure of these. In the modification shown in FIG. 18A, the photonic crystal structure in the region A of the stripe structures 10 </ b> A and 10 </ b> B is configured by the flat recess 16. Further, in the modification shown in FIG. 18B, the photonic crystal structure in the region A of the stripe structure 10A is constituted by a cylindrical recess 9, and the photonic crystal structure in the region A of the stripe structure 10B is a flat plate shape. It is comprised by the recessed part 16 of. When configured in this manner, light emission in the region A (A1 in FIG. 17B) is suppressed.

  FIGS. 20A to 20D are plan views showing configurations of other modifications of the semiconductor light emitting element according to Embodiment 6 of the present invention. In the modification shown in FIG. 20A, a square lattice-shaped recess 19 is formed in a plan view in the region B that is the light output region. In the modification shown in FIG. 20B, similarly, in the region B, a rectangular tubular recess 20 is formed in a nested manner in a plan view. It was found that the rotation of the pointing vector is suppressed even in such a configuration. In particular, in order to suppress spontaneous emission light leaking outside the stripe structure forming the resonator structure, a cylindrical recess having a period adjusted so that the emission wavelength is within the photonic band gap is provided outside the stripe structure. By forming it, the luminous efficiency could be increased.

  In the modification shown in FIG. 20C, a photonic crystal structure having an emission wavelength in the photonic band gap is formed around the resonators (stripe structures 10A and 10B). In this case, there is an advantage that it is not necessary to form a highly reflective film on the end face of the resonator. FIG. 21 shows a manufacturing method of such a modification.

  FIG. 21 is an explanatory diagram for explaining a manufacturing method of a modified example of the semiconductor light emitting device according to the sixth embodiment of the present invention, wherein (a) is a cross-sectional view showing the configuration of the modified example, and (b) (D) is a top view which shows the structure of the modification.

  As described above with reference to FIG. 5A in the first embodiment, an n-type InP lower cladding layer 3 (thickness: 100 nm) doped with Si and an undoped active layer 4 (thickness) on the n-type InP substrate 1. 14 nm) and Zn-doped p-type InP upper cladding layer 5 (thickness 50 nm) is epitaxially grown by a known crystal growth method such as MOVPE (FIG. 21A).

  Next, a plurality of flat plate-like concave portions 16 and a cylindrical concave portion 9 are formed side by side so as to form a cross shape. Specifically, as shown in FIG. 21B, columnar recesses 9 are arranged in a quadrangular lattice pattern in the cross-shaped intersection region, and plate-like recesses 16 are arranged at predetermined intervals in the other regions. Arrange. Then, around the cross-shaped region obtained in this way, cylindrical recesses 21 for reflection are formed in a square lattice shape so as to surround the cross-shaped region.

  Next, as illustrated in FIG. 21C, the separation groove 22 is formed so as to surround the cross-shaped region constituted by the flat plate-like concave portion 16 and the columnar concave portion 9. Then, as shown in FIG. 21 (d), a top electrode is deposited in a region other than the cross-shaped intersection region.

  Through the above steps, a modification of the semiconductor light emitting device of this embodiment as shown in FIG. 20C can be manufactured.

  The photonic crystal according to the present embodiment and the modification thereof described above is configured by arranging the concave portions in a square lattice or a rectangular lattice shape, but the concave portions are triangular as shown in FIG. You may make it comprise by arranging in a grid | lattice form. In this case, three stripe structures 10A, 10B, and 10C are provided, and the stripe structures 10A, 10B, and 10C intersect at an angle of 60 °. For this reason, the intersecting region has a hexagonal shape. By the way, in this case, since there are three resonator directions, triple degeneration occurs. Therefore, there is a problem that the structure of the photonic band gap becomes complicated and the design is difficult. However, since spontaneous emission light from most of the light emitting region can be used, there is an advantage that a high output light emitting element can be realized.

  From the foregoing description, many modifications and other embodiments of the present invention are obvious to one skilled in the art. Accordingly, the foregoing description should be construed as illustrative only and is provided for the purpose of teaching those skilled in the art the best mode of carrying out the invention. The details of the structure and / or function may be substantially changed without departing from the spirit of the invention.

The semiconductor light emitting device according to the present invention is useful as a semiconductor light emitting device used in an optical communication system or the like .

It is a perspective view which shows the structure of the conventional semiconductor light-emitting device using the conventional photonic crystal. It is a top view which shows the structure of the semiconductor light-emitting device concerning Embodiment 1 of this invention. It is the III-III arrow directional view of FIG. It is the IV-IV arrow line view of FIG. BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing for demonstrating the manufacturing method of the semiconductor light-emitting device based on Embodiment 1 of this invention, Comprising: (a) is sectional drawing which shows the structure of the semiconductor light-emitting device, (b) to (d) is the It is a top view which shows the structure of a semiconductor light-emitting device. It is sectional drawing which shows the structure of the modification of the semiconductor light-emitting device concerning Embodiment 1 of this invention. It is explanatory drawing for demonstrating the light emission state of the semiconductor light-emitting device concerning Embodiment 1 of this invention, (a) is a figure which shows the relationship between the wave number of light and energy in the area | region in which the photonic crystal is not formed. (B) is a figure which shows the relationship between the wave number of light and energy in a photonic crystal structure. It is a top view which shows the structure of the semiconductor light-emitting device concerning Embodiment 2 of this invention. It is explanatory drawing for demonstrating the manufacturing method of the semiconductor light-emitting device based on Embodiment 2 of this invention, Comprising: (a) is sectional drawing which shows the structure of the semiconductor light-emitting device, (b) to (d) is the It is a top view which shows the structure of a semiconductor light-emitting device. It is explanatory drawing for demonstrating the light emission state of the semiconductor light-emitting device based on Embodiment 2 of this invention, (a) is a figure which shows the relationship between the wave number of light of a photonic crystal structure in a resonator direction, and energy. FIG. 5B is a diagram showing the relationship between the wave number and energy of light in the photonic crystal structure in a direction orthogonal to the resonator direction. It is a figure which shows the structure of the semiconductor light-emitting device based on Embodiment 3 of this invention, Comprising: (a) is a top view which shows the structure, (b) is an AA arrow directional view of (a). It is a figure which shows the structure of the modification of the semiconductor light-emitting device based on Embodiment 3 of this invention, Comprising: (a) is a top view which shows the structure, (b) is a BB arrow directional view of (a). It is. It is a figure which shows the structure of the semiconductor light-emitting device based on Embodiment 4 of this invention, Comprising: (a) is a top view which shows the structure, (b) is a CC arrow directional view of (a). It is a figure which shows the structure of the modification of the semiconductor light-emitting device based on Embodiment 4 of this invention, Comprising: (a)-(d) is a top view which shows the structure, (e) is the stripe structure of the semiconductor light-emitting device. It is a figure which shows the change of the light intensity inside. It is a figure which shows the structure of the semiconductor light-emitting device based on Embodiment 5 of this invention, Comprising: (a) is a top view which shows the structure, (b) is sectional drawing which shows the structure of a modification, (c) is the figure It is a figure which shows the change of the light intensity inside the stripe structure of a semiconductor light-emitting device. It is explanatory drawing for demonstrating the light emission state of the semiconductor light-emitting device based on Embodiment 5 of this invention, (c) is light of the photonic crystal structure in the (alpha) direction (resonator direction) of Fig.15 (a). It is a figure which shows the relationship between a wave number and energy, (b) is a figure which similarly shows the relationship between the wave number and energy of the light of a photonic crystal structure in (beta) direction (direction orthogonal to a resonator direction). It is a figure for demonstrating the semiconductor light-emitting device based on Embodiment 6 of this invention, Comprising: (a) is a top view which shows the structure of the semiconductor light-emitting device, (b) shows the principle of operation of the semiconductor light-emitting device. FIG. 3C shows the behavior of the electric field. It is a figure which shows the structure of the modification of the semiconductor light-emitting device concerning Embodiment 6 of this invention, Comprising: (a) is a top view which shows the structure of the modification, (b) shows the structure of another modification. It is a top view. It is explanatory drawing for demonstrating the manufacturing method of the semiconductor light-emitting device based on Embodiment 6 of this invention, Comprising: (a) is sectional drawing which shows the structure of the semiconductor light-emitting device, (b) to (d) is the It is a top view which shows the structure of a semiconductor light-emitting device. It is a top view which shows the structure of the other modification of the semiconductor light-emitting device concerning Embodiment 6 of this invention. It is explanatory drawing for demonstrating the manufacturing method of the modification of the semiconductor light-emitting device based on Embodiment 6 of this invention, Comprising: (a) is sectional drawing which shows the structure of the modification, (b) to (d) These are top views which show the structure of the modification.

Explanation of symbols

1 n-type InP substrate 2 photonic crystal structure 3 n-type InP lower clad layer 4 active layer 5 p-type InP upper clad layer 6 upper electrode 7 lower electrode 9 recess 10 stripe structure 11 insulator multilayer thin film 12 reflective recess 13 growth region 15 recesses for reflection 16 recesses 18 separation grooves 19 recesses 21 recesses for reflection 22 separation grooves

Claims (20)

A semiconductor substrate;
A semiconductor laminate including a lower clad layer formed on the semiconductor substrate, an active layer having a resonator in a direction parallel to the semiconductor substrate, and an upper clad layer, and connected to the upper clad layer A striped upper electrode extending in the cavity direction;
A lower electrode connected to the lower cladding layer,
The semiconductor laminate has a photonic crystal structure in which a plurality of concave portions or convex portions are periodically arranged in a resonator direction,
The photonic crystal structure is formed so that at least a part thereof does not overlap with the upper electrode in a plan view and is aligned with the upper electrode in the resonator direction,
The period of the concave portion or convex portion is set so that the high energy end or low energy end of the photonic band gap of the photonic crystal structure coincides with the energy of spontaneous emission light,
A semiconductor light emitting element that emits light from a region that does not overlap the upper electrode in a plan view of the photonic crystal structure when a predetermined voltage is applied between the upper electrode and the lower electrode.   The semiconductor light emitting element according to claim 1, wherein the concave portion or the convex portion is formed in the upper clad layer.   The semiconductor light emitting element according to claim 1, wherein the concave portion or the convex portion is formed across the upper clad layer, the active layer, and the lower clad layer.   The semiconductor light-emitting element according to claim 1, wherein a shape of the concave portion or the convex portion is a columnar shape.   The semiconductor light-emitting element according to claim 1, wherein the concave portion or the convex portion has a flat plate shape.   The semiconductor light emitting element according to claim 1, wherein a width of the resonator is 2 μm or more and 10 μm or less.   The semiconductor light emitting element according to claim 1, wherein a length of the resonator is 20 μm or more and 50 μm or less.   The semiconductor light emitting element according to claim 1, wherein the resonator direction is a <110> direction or a <−110> direction.   2. The concave portion or the convex portion is arranged in a square lattice shape, one arrangement direction of the concave portion or the convex portion is the same as the resonator direction, and the other arrangement direction is orthogonal to the resonator direction. The semiconductor light-emitting device described in 1.   The semiconductor light emitting element according to claim 9, wherein an interval between adjacent concave portions or convex portions in the one arrangement direction is different from an interval between adjacent concave portions or convex portions in the other arrangement direction.   The semiconductor light emitting element according to claim 10, wherein an interval between adjacent concave portions or convex portions in the one arrangement direction is larger than an interval between adjacent concave portions or convex portions in the other arrangement direction.   The semiconductor light emitting element according to claim 1, wherein reflection films are formed on both end faces of the semiconductor laminate.   2. The semiconductor light emitting element according to claim 1, wherein a photonic crystal structure including a plurality of concave portions or convex portions arranged at a predetermined interval is formed around the semiconductor stacked body.   The semiconductor light emitting element according to claim 1, wherein the concave portion or the convex portion is formed over the entire upper surface of the semiconductor stacked body.   The semiconductor light emitting element according to claim 14, wherein a region that does not overlap the upper electrode in a plan view of the photonic crystal structure is a central portion of the semiconductor stacked body.   An interval between some of the concave portions or convex portions adjacent to each other in the resonator direction is larger by a wavelength / (effective refractive index × 4) than the interval between the other concave portions or convex portions. Item 14. The semiconductor light emitting device according to Item 1. Comprising a plurality of the semiconductor laminates,
The semiconductor light emitting element according to claim 1, wherein the plurality of semiconductor stacked bodies are arranged so as to cross each other.   2. The semiconductor light emitting device according to claim 1, wherein a high energy end of a photonic band gap of the photonic crystal structure coincides with an energy of the spontaneous emission light.   The semiconductor light emitting element according to claim 1, wherein a low energy end of a photonic band gap of the photonic crystal structure and an energy of the spontaneous emission light coincide with each other. By the natural emission light and the photonic band gap coupling, the light is emitted in a direction perpendicular to the substrate by radiate ultrasonic, semiconductor light-emitting device according to claim 1.

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