JP2021028971A5 - - Google Patents

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JP2021028971A5
JP2021028971A5 JP2019205491A JP2019205491A JP2021028971A5 JP 2021028971 A5 JP2021028971 A5 JP 2021028971A5 JP 2019205491 A JP2019205491 A JP 2019205491A JP 2019205491 A JP2019205491 A JP 2019205491A JP 2021028971 A5 JP2021028971 A5 JP 2021028971A5
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Japan
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optical device
semiconductor optical
embedded
embedded semiconductor
device characterized
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JP2019205491A
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Japanese (ja)
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JP2021028971A (ja
JP7457485B2 (ja
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Priority to US16/845,223 priority Critical patent/US11462886B2/en
Priority to CN202010618502.6A priority patent/CN112436376B/zh
Publication of JP2021028971A publication Critical patent/JP2021028971A/ja
Publication of JP2021028971A5 publication Critical patent/JP2021028971A5/ja
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JP2019205491A 2019-08-09 2019-11-13 埋め込み型半導体光素子 Active JP7457485B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US16/845,223 US11462886B2 (en) 2019-08-09 2020-04-10 Buried-type semiconductor optical device
CN202010618502.6A CN112436376B (zh) 2019-08-09 2020-06-30 掩埋型半导体光学装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019147475 2019-08-09
JP2019147475 2019-08-09

Publications (3)

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JP2021028971A JP2021028971A (ja) 2021-02-25
JP2021028971A5 true JP2021028971A5 (enExample) 2022-11-14
JP7457485B2 JP7457485B2 (ja) 2024-03-28

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JP2019205491A Active JP7457485B2 (ja) 2019-08-09 2019-11-13 埋め込み型半導体光素子

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JP (1) JP7457485B2 (enExample)
CN (1) CN112436376B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240004977A (ko) * 2021-06-17 2024-01-11 미쓰비시덴키 가부시키가이샤 광반도체 소자 및 그 제조 방법
US20240413613A1 (en) * 2021-11-30 2024-12-12 Mitsubishi Electric Corporation Semiconductor laser and method for producing semiconductor laser
CN116526297A (zh) * 2023-06-01 2023-08-01 安徽格恩半导体有限公司 一种具有双激子量子限域层的半导体激光器
TWI873723B (zh) * 2023-07-17 2025-02-21 索爾思光電股份有限公司 具有防水鍍膜之光學裝置及其製作方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251182A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 半導体発光装置の製造方法
JPH0277187A (ja) * 1988-06-30 1990-03-16 Furukawa Electric Co Ltd:The 半導体レーザ素子
JP2998629B2 (ja) * 1995-03-31 2000-01-11 日本電気株式会社 光半導体装置とその製造方法
US5847415A (en) * 1995-03-31 1998-12-08 Nec Corporation Light emitting device having current blocking structure
JP2000216500A (ja) 1999-01-21 2000-08-04 Hitachi Ltd 半導体光素子、半導体光素子アレイ、および、これらを用いた光通信システム
US6556605B1 (en) * 2000-02-29 2003-04-29 Triquent Technology Holding, Co. Method and device for preventing zinc/iron interaction in a semiconductor laser
JP2006286809A (ja) 2005-03-31 2006-10-19 Fujitsu Ltd 光半導体デバイス及びその製造方法
CN100426606C (zh) * 2005-05-27 2008-10-15 中国科学院半导体研究所 窄条选择外延技术制作铝铟镓砷掩埋脊波导激光器及方法
JP2008053649A (ja) 2006-08-28 2008-03-06 Mitsubishi Electric Corp 埋め込み型半導体レーザ
JP5026115B2 (ja) 2007-03-15 2012-09-12 日本電信電話株式会社 量子井戸構造、半導体レーザ、分光計測装置及び量子井戸構造の製造方法
JP2009302474A (ja) 2008-06-17 2009-12-24 Sumitomo Electric Ind Ltd 半導体発光素子及びその製造方法
JP5467953B2 (ja) 2010-07-07 2014-04-09 日本オクラロ株式会社 半導体光素子、光送信モジュール、光送受信モジュール、及び、光伝送装置
JP5897414B2 (ja) 2011-08-23 2016-03-30 日本オクラロ株式会社 光デバイスの製造方法
JP2014045083A (ja) 2012-08-27 2014-03-13 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子及び半導体光素子の作製方法
EP3227977B1 (en) * 2014-12-03 2021-06-02 Alpes Lasers S.A. Quantum cascade laser with current blocking layers
JP6897928B2 (ja) * 2016-01-14 2021-07-07 住友電工デバイス・イノベーション株式会社 光半導体素子の製造方法および光半導体素子
CN112189289B (zh) 2018-05-28 2022-08-02 三菱电机株式会社 半导体激光器装置

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