CN112436376B - 掩埋型半导体光学装置 - Google Patents
掩埋型半导体光学装置 Download PDFInfo
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- CN112436376B CN112436376B CN202010618502.6A CN202010618502A CN112436376B CN 112436376 B CN112436376 B CN 112436376B CN 202010618502 A CN202010618502 A CN 202010618502A CN 112436376 B CN112436376 B CN 112436376B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 122
- 230000003287 optical effect Effects 0.000 title claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
- 238000005253 cladding Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 230000005701 quantum confined stark effect Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 230000005699 Stark effect Effects 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- VUQUOGPMUUJORT-UHFFFAOYSA-N methyl 4-methylbenzenesulfonate Chemical compound COS(=O)(=O)C1=CC=C(C)C=C1 VUQUOGPMUUJORT-UHFFFAOYSA-N 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2223—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties hetero barrier blocking layers, e.g. P-P or N-N
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-147475 | 2019-08-09 | ||
| JP2019147475 | 2019-08-09 | ||
| JP2019-205491 | 2019-11-13 | ||
| JP2019205491A JP7457485B2 (ja) | 2019-08-09 | 2019-11-13 | 埋め込み型半導体光素子 |
| US16/845,223 US11462886B2 (en) | 2019-08-09 | 2020-04-10 | Buried-type semiconductor optical device |
| US16/845,223 | 2020-04-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112436376A CN112436376A (zh) | 2021-03-02 |
| CN112436376B true CN112436376B (zh) | 2023-07-18 |
Family
ID=74667459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010618502.6A Active CN112436376B (zh) | 2019-08-09 | 2020-06-30 | 掩埋型半导体光学装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7457485B2 (enExample) |
| CN (1) | CN112436376B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240004977A (ko) * | 2021-06-17 | 2024-01-11 | 미쓰비시덴키 가부시키가이샤 | 광반도체 소자 및 그 제조 방법 |
| US20240413613A1 (en) * | 2021-11-30 | 2024-12-12 | Mitsubishi Electric Corporation | Semiconductor laser and method for producing semiconductor laser |
| CN116526297A (zh) * | 2023-06-01 | 2023-08-01 | 安徽格恩半导体有限公司 | 一种具有双激子量子限域层的半导体激光器 |
| TWI873723B (zh) * | 2023-07-17 | 2025-02-21 | 索爾思光電股份有限公司 | 具有防水鍍膜之光學裝置及其製作方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5847415A (en) * | 1995-03-31 | 1998-12-08 | Nec Corporation | Light emitting device having current blocking structure |
| CN1870368A (zh) * | 2005-05-27 | 2006-11-29 | 中国科学院半导体研究所 | 窄条选择外延技术制作铝铟镓砷掩埋脊波导激光器及方法 |
| CN106972345A (zh) * | 2016-01-14 | 2017-07-21 | 住友电工光电子器件创新株式会社 | 形成半导体光学器件的方法及半导体光学器件 |
| CN107251346A (zh) * | 2014-12-03 | 2017-10-13 | 阿尔佩斯激光有限公司 | 具有电流阻挡层的量子级联激光器 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61251182A (ja) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | 半導体発光装置の製造方法 |
| JPH0277187A (ja) * | 1988-06-30 | 1990-03-16 | Furukawa Electric Co Ltd:The | 半導体レーザ素子 |
| JP2998629B2 (ja) * | 1995-03-31 | 2000-01-11 | 日本電気株式会社 | 光半導体装置とその製造方法 |
| JP2000216500A (ja) | 1999-01-21 | 2000-08-04 | Hitachi Ltd | 半導体光素子、半導体光素子アレイ、および、これらを用いた光通信システム |
| US6556605B1 (en) * | 2000-02-29 | 2003-04-29 | Triquent Technology Holding, Co. | Method and device for preventing zinc/iron interaction in a semiconductor laser |
| JP2006286809A (ja) | 2005-03-31 | 2006-10-19 | Fujitsu Ltd | 光半導体デバイス及びその製造方法 |
| JP2008053649A (ja) | 2006-08-28 | 2008-03-06 | Mitsubishi Electric Corp | 埋め込み型半導体レーザ |
| JP5026115B2 (ja) | 2007-03-15 | 2012-09-12 | 日本電信電話株式会社 | 量子井戸構造、半導体レーザ、分光計測装置及び量子井戸構造の製造方法 |
| JP2009302474A (ja) | 2008-06-17 | 2009-12-24 | Sumitomo Electric Ind Ltd | 半導体発光素子及びその製造方法 |
| JP5467953B2 (ja) | 2010-07-07 | 2014-04-09 | 日本オクラロ株式会社 | 半導体光素子、光送信モジュール、光送受信モジュール、及び、光伝送装置 |
| JP5897414B2 (ja) | 2011-08-23 | 2016-03-30 | 日本オクラロ株式会社 | 光デバイスの製造方法 |
| JP2014045083A (ja) | 2012-08-27 | 2014-03-13 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光素子及び半導体光素子の作製方法 |
| CN112189289B (zh) | 2018-05-28 | 2022-08-02 | 三菱电机株式会社 | 半导体激光器装置 |
-
2019
- 2019-11-13 JP JP2019205491A patent/JP7457485B2/ja active Active
-
2020
- 2020-06-30 CN CN202010618502.6A patent/CN112436376B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5847415A (en) * | 1995-03-31 | 1998-12-08 | Nec Corporation | Light emitting device having current blocking structure |
| CN1870368A (zh) * | 2005-05-27 | 2006-11-29 | 中国科学院半导体研究所 | 窄条选择外延技术制作铝铟镓砷掩埋脊波导激光器及方法 |
| CN107251346A (zh) * | 2014-12-03 | 2017-10-13 | 阿尔佩斯激光有限公司 | 具有电流阻挡层的量子级联激光器 |
| CN106972345A (zh) * | 2016-01-14 | 2017-07-21 | 住友电工光电子器件创新株式会社 | 形成半导体光学器件的方法及半导体光学器件 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112436376A (zh) | 2021-03-02 |
| JP2021028971A (ja) | 2021-02-25 |
| JP7457485B2 (ja) | 2024-03-28 |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |