JP7457485B2 - 埋め込み型半導体光素子 - Google Patents

埋め込み型半導体光素子 Download PDF

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Publication number
JP7457485B2
JP7457485B2 JP2019205491A JP2019205491A JP7457485B2 JP 7457485 B2 JP7457485 B2 JP 7457485B2 JP 2019205491 A JP2019205491 A JP 2019205491A JP 2019205491 A JP2019205491 A JP 2019205491A JP 7457485 B2 JP7457485 B2 JP 7457485B2
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optical device
buried
semiconductor optical
layer
buried layer
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JP2021028971A (ja
JP2021028971A5 (enExample
Inventor
茂則 早川
裕則 坂本
俊也 山内
義博 中井
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日本ルメンタム株式会社
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Priority to US16/845,223 priority Critical patent/US11462886B2/en
Priority to CN202010618502.6A priority patent/CN112436376B/zh
Publication of JP2021028971A publication Critical patent/JP2021028971A/ja
Publication of JP2021028971A5 publication Critical patent/JP2021028971A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2223—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties hetero barrier blocking layers, e.g. P-P or N-N
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2019205491A 2019-08-09 2019-11-13 埋め込み型半導体光素子 Active JP7457485B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US16/845,223 US11462886B2 (en) 2019-08-09 2020-04-10 Buried-type semiconductor optical device
CN202010618502.6A CN112436376B (zh) 2019-08-09 2020-06-30 掩埋型半导体光学装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019147475 2019-08-09
JP2019147475 2019-08-09

Publications (3)

Publication Number Publication Date
JP2021028971A JP2021028971A (ja) 2021-02-25
JP2021028971A5 JP2021028971A5 (enExample) 2022-11-14
JP7457485B2 true JP7457485B2 (ja) 2024-03-28

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JP2019205491A Active JP7457485B2 (ja) 2019-08-09 2019-11-13 埋め込み型半導体光素子

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JP (1) JP7457485B2 (enExample)
CN (1) CN112436376B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240004977A (ko) * 2021-06-17 2024-01-11 미쓰비시덴키 가부시키가이샤 광반도체 소자 및 그 제조 방법
US20240413613A1 (en) * 2021-11-30 2024-12-12 Mitsubishi Electric Corporation Semiconductor laser and method for producing semiconductor laser
CN116526297A (zh) * 2023-06-01 2023-08-01 安徽格恩半导体有限公司 一种具有双激子量子限域层的半导体激光器
TWI873723B (zh) * 2023-07-17 2025-02-21 索爾思光電股份有限公司 具有防水鍍膜之光學裝置及其製作方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216500A (ja) 1999-01-21 2000-08-04 Hitachi Ltd 半導体光素子、半導体光素子アレイ、および、これらを用いた光通信システム
JP2006286809A (ja) 2005-03-31 2006-10-19 Fujitsu Ltd 光半導体デバイス及びその製造方法
JP2008053649A (ja) 2006-08-28 2008-03-06 Mitsubishi Electric Corp 埋め込み型半導体レーザ
JP2008227329A (ja) 2007-03-15 2008-09-25 Nippon Telegr & Teleph Corp <Ntt> 量子井戸構造、半導体レーザ、分光計測装置及び量子井戸構造の製造方法
JP2009302474A (ja) 2008-06-17 2009-12-24 Sumitomo Electric Ind Ltd 半導体発光素子及びその製造方法
JP2012019053A (ja) 2010-07-07 2012-01-26 Opnext Japan Inc 半導体光素子、光送信モジュール、光送受信モジュール、及び、光伝送装置
JP2013061632A (ja) 2011-08-23 2013-04-04 Japan Oclaro Inc 光デバイス、光モジュール、及び光デバイスの製造方法
JP2014045083A (ja) 2012-08-27 2014-03-13 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子及び半導体光素子の作製方法
JP2017537481A (ja) 2014-12-03 2017-12-14 アルプ レイザーズ ソシエテ アノニムＡｌｐｅｓ Ｌａｓｅｒｓ Ｓ．Ａ． 電流ブロック層を有する量子カスケードレーザ
WO2019229799A1 (ja) 2018-05-28 2019-12-05 三菱電機株式会社 半導体レーザ装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251182A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 半導体発光装置の製造方法
JPH0277187A (ja) * 1988-06-30 1990-03-16 Furukawa Electric Co Ltd:The 半導体レーザ素子
JP2998629B2 (ja) * 1995-03-31 2000-01-11 日本電気株式会社 光半導体装置とその製造方法
US5847415A (en) * 1995-03-31 1998-12-08 Nec Corporation Light emitting device having current blocking structure
US6556605B1 (en) * 2000-02-29 2003-04-29 Triquent Technology Holding, Co. Method and device for preventing zinc/iron interaction in a semiconductor laser
CN100426606C (zh) * 2005-05-27 2008-10-15 中国科学院半导体研究所 窄条选择外延技术制作铝铟镓砷掩埋脊波导激光器及方法
JP6897928B2 (ja) * 2016-01-14 2021-07-07 住友電工デバイス・イノベーション株式会社 光半導体素子の製造方法および光半導体素子

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216500A (ja) 1999-01-21 2000-08-04 Hitachi Ltd 半導体光素子、半導体光素子アレイ、および、これらを用いた光通信システム
JP2006286809A (ja) 2005-03-31 2006-10-19 Fujitsu Ltd 光半導体デバイス及びその製造方法
JP2008053649A (ja) 2006-08-28 2008-03-06 Mitsubishi Electric Corp 埋め込み型半導体レーザ
JP2008227329A (ja) 2007-03-15 2008-09-25 Nippon Telegr & Teleph Corp <Ntt> 量子井戸構造、半導体レーザ、分光計測装置及び量子井戸構造の製造方法
JP2009302474A (ja) 2008-06-17 2009-12-24 Sumitomo Electric Ind Ltd 半導体発光素子及びその製造方法
JP2012019053A (ja) 2010-07-07 2012-01-26 Opnext Japan Inc 半導体光素子、光送信モジュール、光送受信モジュール、及び、光伝送装置
JP2013061632A (ja) 2011-08-23 2013-04-04 Japan Oclaro Inc 光デバイス、光モジュール、及び光デバイスの製造方法
JP2014045083A (ja) 2012-08-27 2014-03-13 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子及び半導体光素子の作製方法
JP2017537481A (ja) 2014-12-03 2017-12-14 アルプ レイザーズ ソシエテ アノニムＡｌｐｅｓ Ｌａｓｅｒｓ Ｓ．Ａ． 電流ブロック層を有する量子カスケードレーザ
US20170373473A1 (en) 2014-12-03 2017-12-28 Alpes Lasers Sa Quantum cascade laser with current blocking layers
WO2019229799A1 (ja) 2018-05-28 2019-12-05 三菱電機株式会社 半導体レーザ装置

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CN112436376B (zh) 2023-07-18
CN112436376A (zh) 2021-03-02
JP2021028971A (ja) 2021-02-25

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