JPH0243341B2 - - Google Patents
Info
- Publication number
- JPH0243341B2 JPH0243341B2 JP57140105A JP14010582A JPH0243341B2 JP H0243341 B2 JPH0243341 B2 JP H0243341B2 JP 57140105 A JP57140105 A JP 57140105A JP 14010582 A JP14010582 A JP 14010582A JP H0243341 B2 JPH0243341 B2 JP H0243341B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- heterojunction
- superlattice
- doped
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57140105A JPS5929462A (ja) | 1982-08-10 | 1982-08-10 | ヘテロ接合素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57140105A JPS5929462A (ja) | 1982-08-10 | 1982-08-10 | ヘテロ接合素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5929462A JPS5929462A (ja) | 1984-02-16 |
| JPH0243341B2 true JPH0243341B2 (enExample) | 1990-09-28 |
Family
ID=15261050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57140105A Granted JPS5929462A (ja) | 1982-08-10 | 1982-08-10 | ヘテロ接合素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5929462A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5963769A (ja) * | 1982-10-05 | 1984-04-11 | Agency Of Ind Science & Technol | 高速半導体素子 |
| JPS61289673A (ja) * | 1985-06-18 | 1986-12-19 | Sumitomo Electric Ind Ltd | 化合物半導体装置 |
| JPS624366A (ja) * | 1985-07-01 | 1987-01-10 | Fujitsu Ltd | ホツトエレクトロントランジスタ |
| JPH0815212B2 (ja) * | 1985-08-30 | 1996-02-14 | ソニー株式会社 | 半導体装置 |
| CN115207089B (zh) * | 2022-07-19 | 2023-06-09 | 江苏华兴激光科技有限公司 | 一种射频芯片外延片 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2913068A1 (de) * | 1979-04-02 | 1980-10-23 | Max Planck Gesellschaft | Heterostruktur-halbleiterkoerper und verwendung hierfuer |
| IT1149814B (it) * | 1979-11-26 | 1986-12-10 | Ibm | Struttura semiconduttrice |
| JPS577165A (en) * | 1980-06-17 | 1982-01-14 | Fujitsu Ltd | Semiconductor device |
-
1982
- 1982-08-10 JP JP57140105A patent/JPS5929462A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5929462A (ja) | 1984-02-16 |
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