JPS5929462A - ヘテロ接合素子 - Google Patents

ヘテロ接合素子

Info

Publication number
JPS5929462A
JPS5929462A JP57140105A JP14010582A JPS5929462A JP S5929462 A JPS5929462 A JP S5929462A JP 57140105 A JP57140105 A JP 57140105A JP 14010582 A JP14010582 A JP 14010582A JP S5929462 A JPS5929462 A JP S5929462A
Authority
JP
Japan
Prior art keywords
gaas
superlattice
heterojunction
type
alas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57140105A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0243341B2 (enExample
Inventor
Takuji Sonoda
琢二 園田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57140105A priority Critical patent/JPS5929462A/ja
Publication of JPS5929462A publication Critical patent/JPS5929462A/ja
Publication of JPH0243341B2 publication Critical patent/JPH0243341B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57140105A 1982-08-10 1982-08-10 ヘテロ接合素子 Granted JPS5929462A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57140105A JPS5929462A (ja) 1982-08-10 1982-08-10 ヘテロ接合素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57140105A JPS5929462A (ja) 1982-08-10 1982-08-10 ヘテロ接合素子

Publications (2)

Publication Number Publication Date
JPS5929462A true JPS5929462A (ja) 1984-02-16
JPH0243341B2 JPH0243341B2 (enExample) 1990-09-28

Family

ID=15261050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57140105A Granted JPS5929462A (ja) 1982-08-10 1982-08-10 ヘテロ接合素子

Country Status (1)

Country Link
JP (1) JPS5929462A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5963769A (ja) * 1982-10-05 1984-04-11 Agency Of Ind Science & Technol 高速半導体素子
JPS61289673A (ja) * 1985-06-18 1986-12-19 Sumitomo Electric Ind Ltd 化合物半導体装置
JPS624366A (ja) * 1985-07-01 1987-01-10 Fujitsu Ltd ホツトエレクトロントランジスタ
JPS6251266A (ja) * 1985-08-30 1987-03-05 Sony Corp 半導体装置
CN115207089A (zh) * 2022-07-19 2022-10-18 江苏华兴激光科技有限公司 一种射频芯片外延片

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132074A (en) * 1979-04-02 1980-10-14 Max Planck Gesellschaft Hetero semiconductor and method of using same
JPS5676581A (en) * 1979-11-26 1981-06-24 Ibm Semiconductor device
JPS577165A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132074A (en) * 1979-04-02 1980-10-14 Max Planck Gesellschaft Hetero semiconductor and method of using same
JPS5676581A (en) * 1979-11-26 1981-06-24 Ibm Semiconductor device
JPS577165A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5963769A (ja) * 1982-10-05 1984-04-11 Agency Of Ind Science & Technol 高速半導体素子
JPS61289673A (ja) * 1985-06-18 1986-12-19 Sumitomo Electric Ind Ltd 化合物半導体装置
JPS624366A (ja) * 1985-07-01 1987-01-10 Fujitsu Ltd ホツトエレクトロントランジスタ
JPS6251266A (ja) * 1985-08-30 1987-03-05 Sony Corp 半導体装置
CN115207089A (zh) * 2022-07-19 2022-10-18 江苏华兴激光科技有限公司 一种射频芯片外延片

Also Published As

Publication number Publication date
JPH0243341B2 (enExample) 1990-09-28

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