JP2016531442A5 - - Google Patents
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- Publication number
- JP2016531442A5 JP2016531442A5 JP2016535482A JP2016535482A JP2016531442A5 JP 2016531442 A5 JP2016531442 A5 JP 2016531442A5 JP 2016535482 A JP2016535482 A JP 2016535482A JP 2016535482 A JP2016535482 A JP 2016535482A JP 2016531442 A5 JP2016531442 A5 JP 2016531442A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inn
- thickness
- light emitting
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims description 108
- 230000006798 recombination Effects 0.000 claims description 10
- 238000005215 recombination Methods 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 239000002070 nanowire Substances 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 6
- 238000009825 accumulation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000010931 gold Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000000370 acceptor Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1358121 | 2013-08-22 | ||
| FR1358121A FR3009894B1 (fr) | 2013-08-22 | 2013-08-22 | Diode electroluminescente dont une zone active comporte des couches d'inn |
| PCT/EP2014/067843 WO2015025007A1 (fr) | 2013-08-22 | 2014-08-21 | Diode electroluminescente dont une zone active comporte des couches d'inn |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016531442A JP2016531442A (ja) | 2016-10-06 |
| JP2016531442A5 true JP2016531442A5 (enExample) | 2020-07-09 |
| JP6789570B2 JP6789570B2 (ja) | 2020-11-25 |
Family
ID=49237495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016535482A Active JP6789570B2 (ja) | 2013-08-22 | 2014-08-21 | 活性領域がＩｎＮの層を含む発光ダイオード |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10153393B2 (enExample) |
| EP (1) | EP3036776B1 (enExample) |
| JP (1) | JP6789570B2 (enExample) |
| CN (1) | CN105917476B (enExample) |
| FR (1) | FR3009894B1 (enExample) |
| WO (1) | WO2015025007A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3000612B1 (fr) * | 2012-12-28 | 2016-05-06 | Commissariat Energie Atomique | Dispositif optoelectronique a microfils ou nanofils |
| US10649233B2 (en) | 2016-11-28 | 2020-05-12 | Tectus Corporation | Unobtrusive eye mounted display |
| JPWO2019106931A1 (ja) * | 2017-12-01 | 2020-11-26 | ソニーセミコンダクタソリューションズ株式会社 | 半導体発光素子 |
| US10673414B2 (en) | 2018-02-05 | 2020-06-02 | Tectus Corporation | Adaptive tuning of a contact lens |
| US10505394B2 (en) | 2018-04-21 | 2019-12-10 | Tectus Corporation | Power generation necklaces that mitigate energy absorption in the human body |
| US10838239B2 (en) | 2018-04-30 | 2020-11-17 | Tectus Corporation | Multi-coil field generation in an electronic contact lens system |
| US10895762B2 (en) | 2018-04-30 | 2021-01-19 | Tectus Corporation | Multi-coil field generation in an electronic contact lens system |
| US10790700B2 (en) | 2018-05-18 | 2020-09-29 | Tectus Corporation | Power generation necklaces with field shaping systems |
| US11137622B2 (en) | 2018-07-15 | 2021-10-05 | Tectus Corporation | Eye-mounted displays including embedded conductive coils |
| US10529107B1 (en) | 2018-09-11 | 2020-01-07 | Tectus Corporation | Projector alignment in a contact lens |
| US10838232B2 (en) | 2018-11-26 | 2020-11-17 | Tectus Corporation | Eye-mounted displays including embedded solenoids |
| US10644543B1 (en) | 2018-12-20 | 2020-05-05 | Tectus Corporation | Eye-mounted display system including a head wearable object |
| US10944290B2 (en) | 2019-08-02 | 2021-03-09 | Tectus Corporation | Headgear providing inductive coupling to a contact lens |
| CN113990989B (zh) * | 2021-12-29 | 2022-03-08 | 材料科学姑苏实验室 | 一种紫外发光二极管外延片及其制作方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9913950D0 (en) | 1999-06-15 | 1999-08-18 | Arima Optoelectronics Corp | Unipolar light emitting devices based on iii-nitride semiconductor superlattices |
| JP2002280673A (ja) * | 2001-03-15 | 2002-09-27 | Sony Corp | 半導体発光素子 |
| US7058105B2 (en) | 2002-10-17 | 2006-06-06 | Samsung Electro-Mechanics Co., Ltd. | Semiconductor optoelectronic device |
| FI20041213A0 (fi) | 2004-09-17 | 2004-09-17 | Optogan Oy | Puolijohdeheterorakenne |
| KR100658970B1 (ko) | 2006-01-09 | 2006-12-19 | 주식회사 메디아나전자 | 복합 파장의 광을 발생시키는 발광 다이오드 소자 |
| WO2008060531A2 (en) | 2006-11-15 | 2008-05-22 | The Regents Of The University Of California | Light emitting diode and laser diode using n-face gan, inn, and ain and their alloys |
| US20080111144A1 (en) | 2006-11-15 | 2008-05-15 | The Regents Of The University Of California | LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GaN, InN, AND AlN AND THEIR ALLOYS |
| JP4927606B2 (ja) | 2007-03-08 | 2012-05-09 | 古河電気工業株式会社 | 半導体発光素子 |
| JP5097532B2 (ja) * | 2007-12-21 | 2012-12-12 | パナソニック株式会社 | 化合物半導体発光素子の製造方法 |
| DE102009015569B9 (de) | 2009-03-30 | 2023-06-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
| WO2011084478A1 (en) | 2009-12-15 | 2011-07-14 | Lehigh University | Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer |
| DE102010012711A1 (de) | 2010-03-25 | 2011-09-29 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements |
| EP2503603B1 (en) * | 2011-03-25 | 2019-09-25 | LG Innotek Co., Ltd. | Light emitting device and method for manufacturing the same |
| JP5633056B2 (ja) | 2011-12-28 | 2014-12-03 | 豊田合成株式会社 | 半導体発光素子、発光装置 |
| JP2014007291A (ja) * | 2012-06-25 | 2014-01-16 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体発光素子および製造方法 |
-
2013
- 2013-08-22 FR FR1358121A patent/FR3009894B1/fr not_active Expired - Fee Related
-
2014
- 2014-08-21 JP JP2016535482A patent/JP6789570B2/ja active Active
- 2014-08-21 CN CN201480046545.4A patent/CN105917476B/zh active Active
- 2014-08-21 US US14/913,254 patent/US10153393B2/en active Active
- 2014-08-21 EP EP14755068.5A patent/EP3036776B1/fr active Active
- 2014-08-21 WO PCT/EP2014/067843 patent/WO2015025007A1/fr not_active Ceased
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