CN105917476B - 其有源区包括InN层的发光二极管 - Google Patents

其有源区包括InN层的发光二极管 Download PDF

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Publication number
CN105917476B
CN105917476B CN201480046545.4A CN201480046545A CN105917476B CN 105917476 B CN105917476 B CN 105917476B CN 201480046545 A CN201480046545 A CN 201480046545A CN 105917476 B CN105917476 B CN 105917476B
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CN
China
Prior art keywords
layers
layer
inn
thickness
emitting diode
Prior art date
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Active
Application number
CN201480046545.4A
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English (en)
Chinese (zh)
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CN105917476A (zh
Inventor
伊凡-克里斯托夫·罗宾
艾梅丽·迪赛涅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Aledia
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Publication of CN105917476A publication Critical patent/CN105917476A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions

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  • Led Devices (AREA)
CN201480046545.4A 2013-08-22 2014-08-21 其有源区包括InN层的发光二极管 Active CN105917476B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1358121 2013-08-22
FR1358121A FR3009894B1 (fr) 2013-08-22 2013-08-22 Diode electroluminescente dont une zone active comporte des couches d'inn
PCT/EP2014/067843 WO2015025007A1 (fr) 2013-08-22 2014-08-21 Diode electroluminescente dont une zone active comporte des couches d'inn

Publications (2)

Publication Number Publication Date
CN105917476A CN105917476A (zh) 2016-08-31
CN105917476B true CN105917476B (zh) 2018-04-06

Family

ID=49237495

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480046545.4A Active CN105917476B (zh) 2013-08-22 2014-08-21 其有源区包括InN层的发光二极管

Country Status (6)

Country Link
US (1) US10153393B2 (enExample)
EP (1) EP3036776B1 (enExample)
JP (1) JP6789570B2 (enExample)
CN (1) CN105917476B (enExample)
FR (1) FR3009894B1 (enExample)
WO (1) WO2015025007A1 (enExample)

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FR3000612B1 (fr) * 2012-12-28 2016-05-06 Commissariat Energie Atomique Dispositif optoelectronique a microfils ou nanofils
WO2018098436A1 (en) 2016-11-28 2018-05-31 Spy Eye, Llc Unobtrusive eye mounted display
WO2019106931A1 (ja) * 2017-12-01 2019-06-06 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子
US10673414B2 (en) 2018-02-05 2020-06-02 Tectus Corporation Adaptive tuning of a contact lens
US10505394B2 (en) 2018-04-21 2019-12-10 Tectus Corporation Power generation necklaces that mitigate energy absorption in the human body
US10838239B2 (en) 2018-04-30 2020-11-17 Tectus Corporation Multi-coil field generation in an electronic contact lens system
US10895762B2 (en) 2018-04-30 2021-01-19 Tectus Corporation Multi-coil field generation in an electronic contact lens system
US10790700B2 (en) 2018-05-18 2020-09-29 Tectus Corporation Power generation necklaces with field shaping systems
US11137622B2 (en) 2018-07-15 2021-10-05 Tectus Corporation Eye-mounted displays including embedded conductive coils
US10529107B1 (en) 2018-09-11 2020-01-07 Tectus Corporation Projector alignment in a contact lens
US10838232B2 (en) 2018-11-26 2020-11-17 Tectus Corporation Eye-mounted displays including embedded solenoids
US10644543B1 (en) 2018-12-20 2020-05-05 Tectus Corporation Eye-mounted display system including a head wearable object
US10944290B2 (en) 2019-08-02 2021-03-09 Tectus Corporation Headgear providing inductive coupling to a contact lens
CN113990989B (zh) * 2021-12-29 2022-03-08 材料科学姑苏实验室 一种紫外发光二极管外延片及其制作方法

Citations (2)

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CN101057343A (zh) * 2004-09-17 2007-10-17 奥普特冈有限公司 半导体异质结构
US20120241770A1 (en) * 2011-03-25 2012-09-27 Jong Ho Na Light emitting device and method for manufacturing the same

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GB9913950D0 (en) 1999-06-15 1999-08-18 Arima Optoelectronics Corp Unipolar light emitting devices based on iii-nitride semiconductor superlattices
JP2002280673A (ja) * 2001-03-15 2002-09-27 Sony Corp 半導体発光素子
US7058105B2 (en) 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device
KR100658970B1 (ko) 2006-01-09 2006-12-19 주식회사 메디아나전자 복합 파장의 광을 발생시키는 발광 다이오드 소자
WO2008060531A2 (en) 2006-11-15 2008-05-22 The Regents Of The University Of California Light emitting diode and laser diode using n-face gan, inn, and ain and their alloys
US20080111144A1 (en) 2006-11-15 2008-05-15 The Regents Of The University Of California LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GaN, InN, AND AlN AND THEIR ALLOYS
JP4927606B2 (ja) 2007-03-08 2012-05-09 古河電気工業株式会社 半導体発光素子
JP5097532B2 (ja) 2007-12-21 2012-12-12 パナソニック株式会社 化合物半導体発光素子の製造方法
DE102009015569B9 (de) 2009-03-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US10115859B2 (en) 2009-12-15 2018-10-30 Lehigh University Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer
DE102010012711A1 (de) * 2010-03-25 2011-09-29 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
JP5633056B2 (ja) 2011-12-28 2014-12-03 豊田合成株式会社 半導体発光素子、発光装置
JP2014007291A (ja) * 2012-06-25 2014-01-16 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体発光素子および製造方法

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CN101057343A (zh) * 2004-09-17 2007-10-17 奥普特冈有限公司 半导体异质结构
US20120241770A1 (en) * 2011-03-25 2012-09-27 Jong Ho Na Light emitting device and method for manufacturing the same
CN102709417A (zh) * 2011-03-25 2012-10-03 Lg伊诺特有限公司 发光器件及其制造方法

Also Published As

Publication number Publication date
EP3036776B1 (fr) 2018-10-17
WO2015025007A1 (fr) 2015-02-26
FR3009894A1 (fr) 2015-02-27
JP2016531442A (ja) 2016-10-06
FR3009894B1 (fr) 2016-12-30
JP6789570B2 (ja) 2020-11-25
US20160204307A1 (en) 2016-07-14
CN105917476A (zh) 2016-08-31
US10153393B2 (en) 2018-12-11
EP3036776A1 (fr) 2016-06-29

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