JP6155478B2 - 電荷キャリアの分布が改善された光活性デバイス及びその形成方法 - Google Patents
電荷キャリアの分布が改善された光活性デバイス及びその形成方法 Download PDFInfo
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- 238000009826 distribution Methods 0.000 title description 4
- 239000002800 charge carrier Substances 0.000 title 1
- 230000004888 barrier function Effects 0.000 claims description 166
- 239000000463 material Substances 0.000 claims description 141
- 239000004065 semiconductor Substances 0.000 claims description 134
- 239000000203 mixture Substances 0.000 claims description 19
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000005360 phosphosilicate glass Substances 0.000 claims description 3
- 239000005368 silicate glass Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 18
- 230000007547 defect Effects 0.000 description 15
- 239000000758 substrate Substances 0.000 description 14
- 229910052738 indium Inorganic materials 0.000 description 13
- 230000005469 synchrotron radiation Effects 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
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- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000009828 non-uniform distribution Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- 238000005215 recombination Methods 0.000 description 1
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Description
Claims (15)
- (a)歪み緩和層上の歪み半導体材料の層を貫いて延びる複数の開口部を形成するステップと、
(b)前記歪み半導体材料及び前記歪み緩和層を熱的に処理し、前記歪み緩和層の変形及び前記歪み半導体材料の緩和をもたらし、少なくとも1つの緩和半導体材料部を形成するステップと、
(c)前記工程(b)の後に、前記少なくとも1つの緩和半導体材料部上に複数のIII−V族半導体材料部を連続してエピタキシャル堆積させて、第1の量子井戸領域と第2の量子井戸領域との間に配置された第1のバリア領域、及び前記第2の量子井戸領域と第3の量子井戸領域との間に配置された第2のバリア領域を備える多重量子井戸構造を形成するステップと、
(d)少なくとも2ナノメートルの井戸領域厚さを有するように前記第1の量子井戸領域、前記第2の量子井戸領域、及び前記第3の量子井戸領域のそれぞれを形成するステップと、
(e)前記第1の量子井戸領域、前記第2の量子井戸領域、及び前記第3の量子井戸領域のそれぞれの厚さ以上のバリア領域厚さを有するように前記第1のバリア領域及び前記第2のバリア領域のそれぞれを形成するステップと、
(f)前記第3の量子井戸領域と前記第2の量子井戸領域との間の正孔のエネルギー障壁が前記第2の量子井戸領域と前記第1の量子井戸領域との間の正孔のエネルギー障壁よりも小さくなるように、前記第1の量子井戸領域、前記第2の量子井戸領域、及び前記第3の量子井戸領域のそれぞれの組成を選択するステップと
を含む、放射光放出デバイスを形成する方法。 - InxGa1−xNを含むように前記第1の量子井戸領域、前記第2の量子井戸領域、及び前記第3の量子井戸領域のそれぞれを形成するステップをさらに含む、請求項1に記載の方法。
- xが少なくとも0.12となるように前記InxGa1−xNの組成を定めるステップをさらに含む、請求項2に記載の方法。
- InyGa1−y Nを含むように前記第1のバリア領域及び前記第2のバリア領域のそれぞれを形成するステップをさらに含む、請求項1に記載の方法。
- yが少なくとも0.05となるように前記InyGa1−yの組成を定めるステップをさらに含む、請求項4に記載の方法。
- 二元III族窒化物材料を含むように前記第1のバリア領域及び前記第2のバリア領域のそれぞれを形成するステップをさらに含む、請求項1に記載の方法。
- GaNを含むように前記第1のバリア領域及び前記第2のバリア領域の前記二元III族窒化物材料を選択するステップをさらに含む、請求項6に記載の方法。
- 少なくとも5ナノメートルのそれぞれの井戸領域厚さを有するように前記第1の量子井戸領域、前記第2の量子井戸領域、及び前記第3の量子井戸領域のそれぞれを形成するステップをさらに含む、請求項1に記載の方法。
- 少なくとも10ナノメートルのそれぞれの井戸領域厚さを有するように前記第1の量子井戸領域、前記第2の量子井戸領域、及び前記第3の量子井戸領域のそれぞれを形成するステップをさらに含む、請求項8に記載の方法。
- 少なくとも20ナノメートルのそれぞれの井戸領域厚さを有するように前記第1の量子井戸領域、前記第2の量子井戸領域、及び前記第3の量子井戸領域のそれぞれを形成するステップをさらに含む、請求項9に記載の方法。
- 第1のバンドギャップエネルギーを有するように前記第1のバリア領域を形成するステップと、前記第1のバンドギャップエネルギーよりも小さい第2のバンドギャップエネルギーを有するように前記第2のバリア領域を形成するステップとをさらに含む、請求項1に記載の方法。
- 少なくとも10nmの全体構造厚さを有するように前記多重量子井戸構造を形成するステップをさらに含む、請求項1に記載の方法。
- InzGa1−zNを含むように前記歪み半導体材料を形成するステップをさらに含む、請求項1に記載の方法。
- zが0.02〜0.17となるように前記InzGa1−zNの組成を定めるステップさらに含む、請求項13に記載の方法。
- シリケートガラス、フォスフォシリケートガラス、ボロシリケートガラス、及びボロフォスフォシリケートガラスのうちの少なくとも1つを含むように前記歪み緩和層を形成するステップをさらに含む、請求項1に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/362,866 US8471243B1 (en) | 2012-01-31 | 2012-01-31 | Photoactive devices with improved distribution of charge carriers, and methods of forming same |
US13/362,866 | 2012-01-31 | ||
FR1251158A FR2986661B1 (fr) | 2012-02-08 | 2012-02-08 | Dispositifs photoactifs avec une repartition amelioree des porteurs de charge, et procedes de formation de ces dispositifs |
FR1251158 | 2012-02-08 | ||
PCT/IB2012/002790 WO2013114152A1 (en) | 2012-01-31 | 2012-12-17 | Photoactive devices with improved distribution of charge carriers, and methods of forming same |
Publications (2)
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JP2015506592A JP2015506592A (ja) | 2015-03-02 |
JP6155478B2 true JP6155478B2 (ja) | 2017-07-05 |
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Country Status (5)
Country | Link |
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JP (1) | JP6155478B2 (ja) |
KR (1) | KR20140119714A (ja) |
CN (1) | CN104094419A (ja) |
DE (1) | DE112012005796T5 (ja) |
WO (1) | WO2013114152A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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FR3004005B1 (fr) * | 2013-03-28 | 2016-11-25 | Commissariat Energie Atomique | Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique |
JP6433247B2 (ja) | 2014-11-07 | 2018-12-05 | スタンレー電気株式会社 | 半導体発光素子 |
JP6433248B2 (ja) | 2014-11-07 | 2018-12-05 | スタンレー電気株式会社 | 半導体発光素子 |
JP6433246B2 (ja) | 2014-11-07 | 2018-12-05 | スタンレー電気株式会社 | 半導体発光素子 |
JP6457784B2 (ja) | 2014-11-07 | 2019-01-23 | スタンレー電気株式会社 | 半導体発光素子 |
DE102015100029A1 (de) * | 2015-01-05 | 2016-07-07 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
JP6651167B2 (ja) | 2015-03-23 | 2020-02-19 | スタンレー電気株式会社 | 半導体発光素子及びその製造方法 |
JP6387978B2 (ja) * | 2016-02-09 | 2018-09-12 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JP6729644B2 (ja) * | 2018-08-08 | 2020-07-22 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
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JP4255168B2 (ja) * | 1998-06-30 | 2009-04-15 | シャープ株式会社 | 窒化物半導体の製造方法及び発光素子 |
JP2001077417A (ja) * | 1999-08-31 | 2001-03-23 | Sharp Corp | 窒素化合物半導体発光素子の製造方法 |
JP3498697B2 (ja) * | 2000-07-07 | 2004-02-16 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP2003031902A (ja) * | 2001-07-16 | 2003-01-31 | Denso Corp | 半導体レーザ |
KR100649749B1 (ko) * | 2005-10-25 | 2006-11-27 | 삼성전기주식회사 | 질화물 반도체 발광 소자 |
KR20080035865A (ko) * | 2006-10-20 | 2008-04-24 | 삼성전자주식회사 | 반도체 발광 소자 |
JP5003527B2 (ja) * | 2008-02-22 | 2012-08-15 | 住友電気工業株式会社 | Iii族窒化物発光素子、及びiii族窒化物系半導体発光素子を作製する方法 |
FR2931293B1 (fr) * | 2008-05-15 | 2010-09-03 | Soitec Silicon On Insulator | Procede de fabrication d'une heterostructure support d'epitaxie et heterostructure correspondante |
EP2151852B1 (en) * | 2008-08-06 | 2020-01-15 | Soitec | Relaxation and transfer of strained layers |
KR20110063773A (ko) | 2008-09-24 | 2011-06-14 | 에스.오.아이. 테크 실리콘 온 인슐레이터 테크놀로지스 | 릴랙싱된 반도체 재료층들을 형성하는 방법들, 반도체 구조들, 디바이스들 및 그를 포함하는 엔지니어링된 기판들 |
JP5315899B2 (ja) * | 2008-09-30 | 2013-10-16 | 信越半導体株式会社 | 発光素子 |
FR2936903B1 (fr) * | 2008-10-07 | 2011-01-14 | Soitec Silicon On Insulator | Relaxation d'une couche de materiau contraint avec application d'un raidisseur |
CN102203904B (zh) | 2008-10-30 | 2013-11-20 | S.O.I.探测硅绝缘技术公司 | 形成具有减小的晶格应变的半导体材料层、半导体结构、装置的方法及包含具有减小的晶格应变的半导体材料层、半导体结构、装置的工程衬底 |
KR101228983B1 (ko) * | 2008-11-17 | 2013-02-04 | 삼성전자주식회사 | 질화물 반도체 발광소자 |
KR101478977B1 (ko) * | 2009-11-18 | 2015-01-06 | 소이텍 | 글라스 접합층을 이용한 반도체 구조들 및 디바이스들의 제조 방법들 및 이와 같은 방법들에 의해 형성되는 반도체 구조들 및 디바이스들 |
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- 2012-12-17 DE DE112012005796.1T patent/DE112012005796T5/de not_active Withdrawn
- 2012-12-17 JP JP2014553817A patent/JP6155478B2/ja active Active
- 2012-12-17 CN CN201280068513.5A patent/CN104094419A/zh active Pending
- 2012-12-17 WO PCT/IB2012/002790 patent/WO2013114152A1/en active Application Filing
- 2012-12-17 KR KR1020147021211A patent/KR20140119714A/ko not_active Application Discontinuation
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CN104094419A (zh) | 2014-10-08 |
KR20140119714A (ko) | 2014-10-10 |
WO2013114152A1 (en) | 2013-08-08 |
JP2015506592A (ja) | 2015-03-02 |
DE112012005796T5 (de) | 2014-10-16 |
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